2N4261
Abstract: 2N4261UB
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 2 July 2002. MIL-PRF-19500/511E 2 April 2002 SUPERSEDING MIL-PRF-19500/511D 19 January 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
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MIL-PRF-19500/511E
MIL-PRF-19500/511D
2N4261,
2N4261UB,
MIL-PRF-195.
2N4261
2N4261UB
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2N4261
Abstract: 2N4261UB 511h 2N4261 JAN
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 11 November 2010. INCH-POUND MIL-PRF-19500/511H 20 September 2010 SUPERSEDING MIL-PRF-19500/511G 27 July 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
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MIL-PRF-19500/511H
MIL-PRF-19500/511G
2N4261,
2N4261UB,
2N4261UBC
MIL-PRF-19500.
2N4261
2N4261UB
511h
2N4261 JAN
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Untitled
Abstract: No abstract text available
Text: SEPTEMBER 1993 DS3820 - 2.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. The unique architecture allows
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DS3820
CLA80000
CLA80k
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hp 4552
Abstract: O2-A2 CQFP100 PSOP24-MP0816 CLT84 gh 312 clt82xxx CQFP44 diode gp 421 PS-3306 Series
Text: CLA80000 Series High Density CMOS Gate Arrays DS3820 ISSUE 2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Zarlink Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in
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CLA80000
DS3820
CLA80k
210ps
hp 4552
O2-A2
CQFP100
PSOP24-MP0816
CLT84
gh 312
clt82xxx
CQFP44
diode gp 421
PS-3306 Series
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CQFP44
Abstract: hp 4552 CLA80000 Series MQFP52 clt82xxx O2-A2 CQFP100 gh 312 PS-3306 Series cqfp120
Text: CLA80000 Series High Density CMOS Gate Arrays DS3820 ISSUE 2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Zarlink Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in
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CLA80000
DS3820
CLA80k
210ps
CQFP44
hp 4552
CLA80000 Series
MQFP52
clt82xxx
O2-A2
CQFP100
gh 312
PS-3306 Series
cqfp120
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Power Supply PS-613 uk
Abstract: CQFP44 GP141 DS3820 mux2*1 hp 4552 PSOP28-MP0818 cla85xxx PS-3306 Series Mitel Semiconductor process flow
Text: CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES The CLA80k gate array series from Mitel Semiconductor offers advantages in speed and density over previous array series. Improvements in design combined with advances in
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CLA80000
DS3820-2
CLA80k
210ps
Power Supply PS-613 uk
CQFP44
GP141
DS3820
mux2*1
hp 4552
PSOP28-MP0818
cla85xxx
PS-3306 Series
Mitel Semiconductor process flow
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Si53306
Abstract: Si53306-B-GM 5310A
Text: Si53306 1 : 4 L O W - J ITTE R U N I V E R S A L B U F F E R / L E V E L T R A N S L A T O R Features 4 differential or 8 LVCMOS outputs Ultra-low additive jitter: 45 fs rms Wide frequency range: 1 to 725 MHz Any-format input with pin selectable
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Si53306
16-QFN
Si53306-B-GM
5310A
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Untitled
Abstract: No abstract text available
Text: Si53306 1 : 4 L O W - J ITTER U N I V E R S A L B U F F E R / L E V E L T R A N S L A T O R Features Independent VDD and VDDO : 1.8/2.5/3.3 V 1.2/1.5 V LVCMOS output support Selectable LVCMOS drive strength to tailor jitter and EMI performance Small size: 16-QFN 3 mm x 3 mm
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Si53306
16-QFN
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2N3251AUB
Abstract: 2N3251A jantx 2N3250A 2N3251A
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 April 2002. INCH-POUND MIL-PRF-19500/323H 28 January 2002 SUPERSEDING MIL-PRF-19500/323G 22 June 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
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MIL-PRF-19500/323H
MIL-PRF-19500/323G
2N3250A,
2N3251A,
2N3250AUB,
2N3251AUB,
MIL-PRF-19500.
2N3251AUB
2N3251A jantx
2N3250A
2N3251A
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transistor equivalent 505a
Abstract: transistor equivalent 2N6287 C-48U 2N6286 2N6287 MIL-PRF19500 S16884 transistor marking code whs QML-19500
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 November 1999 INCH-POUND MIL-PRF-19500/505B 4 August 1999 SUPERSEDING MIL-S-19500/505A USAF 6 October 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER
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MIL-PRF-19500/505B
MIL-S-19500/505A
2N6286,
2N6287
MIL-PRF-19500.
transistor equivalent 505a
transistor equivalent 2N6287
C-48U
2N6286
MIL-PRF19500
S16884
transistor marking code whs
QML-19500
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C48U
Abstract: S16884 2N6286 2N6287 3041 v transistor equivalent 2N6287 C-48U
Text: The documentation and process conversion measures necessary to comply with this document shall be completed by 22 September 2009. INCH POUND MIL-PRF-19500/505E 22 July 2009 SUPERSEDING MIL-PRF-19500/505D 10 January 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, PNP, SILICON, POWER,
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MIL-PRF-19500/505E
MIL-PRF-19500/505D
2N6286
2N6287,
MIL-PRF-19500.
C48U
S16884
2N6287
3041 v
transistor equivalent 2N6287
C-48U
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2n6284 equivalent
Abstract: S16884 2N6283 2N6284
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 February 2009. MIL-PRF-19500/504E 18 November 2008 SUPERSEDING MIL-PRF-19500/504D 29 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, POWER,
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MIL-PRF-19500/504E
MIL-PRF-19500/504D
2N6283
2N6284,
MIL-PRF-19500.
2n6284 equivalent
S16884
2N6284
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tea1719
Abstract: PH1930 nds 3 video guard smart card OPTOCOUPLER SMPS for HDD ph1930al PH2530AL ip4223 SMD 8A TRANSISTOR 702 transistor smd code PH6030AL
Text: Application Guide Notebook Computing Introduction Your partner for notebook computing Designing notebooks isn’t getting any easier. The footprint continues to shrink, and consumers continue to demand more features, faster speeds, on our decades-long leadership in high-performance mixed-signal solutions,
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Untitled
Abstract: No abstract text available
Text: 10 Amps/Series 3 3 0 0 Pre-grounding connectors for greater safety For panel and cable mounting Beau 3300 connectors are completely interchangeable with 'Series 300 type” connectors. They are designed for panel and cable mounting using a wide variety of hardware. The
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST FT R E V IS IO N S LTR 01 DESCRIPTION REVISED PER DATE EC 0-06-12021 DWN A PVD SS SRY 5 /2 5 /0 6 NOTES: D 1. ALL DIMENSIONS ARE IN MM.
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EC0-06-12021
31MAR2000
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Untitled
Abstract: No abstract text available
Text: D E V IC E S P E C IF IC A T IO N 20-OUTPUT LVTTL CLOCK DRIVERS FEA TU RES • 20 clock outputs: - T en or tw e n ty outputs SC 3308 at prim ary freq u e n cy, up to 80 M Hz - T en outputs at 1/2 prim ary frequency (SC3306) • All outputs are leading edge synchronized
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20-OUTPUT
SC3306/08
SC3306)
84-unit
52-pin
SC330XQ-1/D
SC3306
SC3308
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DS3820
Abstract: No abstract text available
Text: S i GEC PLESS EY SEPTEMBER 1993 S E M I C O N D U C T O R S DS3820 - 2.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS IN T R O D U C T IO N ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density
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DS3820
CLA80000
CLA80k
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MUX2T01
Abstract: MUX4T01
Text: •JUL J Ü 9 S3- GEC PLES S EY J U N E 1993 S E M I C O N D U C T O R S DS3820 - 1.0 CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The new CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density
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DS3820
CLA80000
CLA80k
MUX2T01
MUX4T01
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BMA16X16
Abstract: No abstract text available
Text: SI GE C P L E S S E Y MARCH 1997 S E M I C O N D U C T O R S CLA80000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION ARRAY SIZES The CLA80k gate array series from GEC Plessey Semiconductors offers advantages in speed and density over previous array series. Improvements in design combined with
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CLA80000
CLA80k
PGA100-ACA-3434
PGA120-ACA-3434
PGA144-ACA-4040
PGA180-ACA-4040
PGA181
-ACA-4040
PGA257-ACA-5151
BMA16X16
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Untitled
Abstract: No abstract text available
Text: MICRO POW ER S Y S T E M S INC blE D • b D T 7 4 4 4 D D D M S B b Mfc,2 M M P S ~r-st - i<&- n MP3306A CMOS 6-Bit High Speed Analog-to-Digital Converter Micro Power Systems FEATURES • • • • ■ • • • • • • SOIC Package • Replacement for Harris CA3306A
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MP3306A
CA3306A
MP7686
MP3306)
PCboarddesignwillaffecttheMP3306Aaccuracy
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SG DIODE
Abstract: ic Thyristor firing circuit GT01000 MGT01200 GTO MOTOROLA
Text: M O T O R O L A SC DIODE S/ OP TO h3b7'2SS GQail03 =| • 2SE D r - a s w f MGT01000 MGT01200 Gate Turn-Off Thyristors The GTO is a fam ily of asym m etric gate turn-off thyristors designed prim arily for dc pow er sw itching applications such as m otor drives, sw itching pow er supplies,
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GQail03
b3b75S5
MGT01000
MGT01200
MGT01000
1000M
MGT01200
1200M,
MGT01400
1400M,
SG DIODE
ic Thyristor firing circuit
GT01000
GTO MOTOROLA
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LT8900
Abstract: itt 2222a LT89000 2203a ses cree 3535 PS-303 AD clt850 LT8600 2168A LT8500
Text: Æ | M IT - L I f 1 w II CLA80000 SERIES I Km*Ink HIGH DENSITY CMOS GATE ARRAYS SEMICONDUCTOR DS3820-2.1 July 1997 INTRODUCTION ARRAY SIZES T he C L A 8 0 k gate array se rie s from M itel S e m ico n d u cto r offers advan ta ge s in spe ed and d e n sity over previous array
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CLA80000
DS3820-2
rra635
MLA85
MLA87
MLT88
MLT89
GA84-ACA-2828
PGA100-ACA-3434
PGA120-ACA-3434
LT8900
itt 2222a
LT89000
2203a ses
cree 3535
PS-303 AD
clt850
LT8600
2168A
LT8500
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ha22544
Abstract: 3307 opamp
Text: ¡2 HARRIS H A -2 5 4 4 August 1990 V ideo O perational Am plifier Features A pplications • Gain B an d w id th . 50MHz • Video Systems • Video Test Equipment • High Slew R a te . 150V/ps
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50MHz
50V/ps
HA2-2544
A3-2544/2544C
A7-2544
HA9P2544
ha22544
3307 opamp
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3N74
Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
Text: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper
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MIL-S-19500/390
TX3N75,
TX3N76,
3N127,
TX3N127
3N74-76
3N127
3N127
3N74
TRANSISTOR MARKING A53
3N75
transistor 3N74
Z933
3N7A-76
3N76
3N75 JAN
3K76
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