IPC-9592
Abstract: hot wire anemometer block diagram
Text: UCE Series www.murata-ps.com Isolated, High-Density, Eighth-Brick Low Profile DC/DC Converters FEATURES • Industry standard eighth-brick pinout and package ■ Low profile 0.4" height with 0.9" x 2.3" outline dimensions ■ 36 to 75 Vdc input range 48V nominal
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5210G
Abstract: No abstract text available
Text: BTS 5210G Smart High-Side Power Switch Two Channels: 2 x 140mΩ Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage one 140mΩ 2.4A 6.5A 5.5.40V two parallel
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5210G
P-DSO-14
2003-Oct-01
5210G
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pin diagram of ic 4511
Abstract: P-DSO-20 Q67060-S7025
Text: BTS 716G Smart High-Side Power Switch Four Channels: 4 x 140mΩ Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage one 140mΩ 2.6A 6.5A 5.5 .40V
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P-DSO-20
2003-Oct-01
pin diagram of ic 4511
P-DSO-20
Q67060-S7025
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824R
Abstract: P-DSO-20-12 Q67060-S7027 SCR IC CHIP
Text: BTS 824R Smart High-Side Power Switch Four Channels: 4 x 90mΩ Status Feedback Product Summary Vbb Active channels On-state Resistance RON Nominal load current IL NOM Current limitation IL(SCr) Package Operating Voltage one 90mΩ 4.7A 12A 5.5.40V four parallel
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2003-Oct-01
824R
P-DSO-20-12
Q67060-S7027
SCR IC CHIP
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12V DC to 48v dc converter circuit diagram
Abstract: 100W 12 volt 48V DC to 12v dc 40 amp converter circuit diagram 100w amp free down load 60950-1 MURATA TBC UCE-12 UCE-1.2/25 UCE-1.2/RBQ-12/33-D
Text: UCE Series Isolated, High-Density, Eighth-Brick 100W DC/DC Converters Typical unit FEATURES n RoHS compliant n Industry standard eighth-brick pinout and package n Outputs from 1.5V to 12V up to 100W n Low profile 0.4" height with 0.9" x 2.3" outline dimensions
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BTS724G
Abstract: No abstract text available
Text: Smart High-Side Power Switch BTS724G 6PDUW +LJK6LGH 3RZHU 6ZLWFK RXU &KDQQHOV [ PΩ 6WDWXV )HHGEDFN Product Summary 9EE $FWLYH FKDQQHOV 2QVWDWH 5HVLVWDQFH 521 1RPLQDO ORDG FXUUHQW ,/ 120 &XUUHQW OLPLWDWLRQ ,/ 6&U Package 2SHUDWLQJ 9ROWDJH RQH PΩ
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BTS724G
P-DSO-20
PG-DSO20
BTS724G
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UCE-1.2/25
Abstract: No abstract text available
Text: UCE Series Isolated, High-Density, Eighth-Brick 100W DC/DC Converters FEATURES n RoHS compliant n Industry standard eighth-brick pinout and package n Outputs from 1.5V to 12V up to 100W n Low profile 0.4" height with 0.9" x 2.3" outline dimensions n 36 to 75 Vdc input range 48V nominal
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724G
Abstract: ITS 724G pin diagram of ic 4511 PROFET SP000219835
Text: PROFET ITS 724G Smart High-Side Power Switch For Industrial Applications Four Channels: 4 x 90mΩ Status Feedback Product Summary Operating Voltage Vbb Operating Temperature Ta Active channels On-state Resistance RON Nominal load current IL NOM Current limitation
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PG-DSO-20
2006-Mar-28
724G
ITS 724G
pin diagram of ic 4511
PROFET
SP000219835
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Untitled
Abstract: No abstract text available
Text: M29W400T M29W400B SGS-THOMSON IIIIMJì ILIì M W IIÈ Ì 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME
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M29W400T
M29W400B
x8/x16,
100ns
10jas
CONS48
TSOP48
M29W400T,
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON raD»HlLl Ê'inM l)i!lD(ei M29W400T M29W400B 4 Mb (x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 100ns > FAST PROGRAMMING TIME ■ 10|is by Byte / 1 6|is by Word typical
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M29W400T
M29W400B
x8/x16,
100ns
TSOP48
M29W400T,
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PDF
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Untitled
Abstract: No abstract text available
Text: w # SGS-THOMSON k7#1 IMlMIIlLIOTiMDtgS M29W800T M29W800B 8 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical
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M29W800T
M29W800B
x8/x16,
100ns
10jas
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei M29F200T M29F200B 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical
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M29F200T
M29F200B
x8/x16,
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Untitled
Abstract: No abstract text available
Text: M29F100T M29F100B SGS-THOMSON I I I I M J ì ILIì M W I I È Ì 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME
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M29F100T
M29F100B
x8/x16,
TSOP48
M29F100T,
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON raD»HlLl Ê'inM l)i!lD(ei M29W400T M29W400B 4 Mb (x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 100ns > FAST PROGRAMMING TIME ■ 10|is by Byte / 1 6|is by Word typical
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M29W400T
M29W400B
x8/x16,
100ns
TSOP48
M29W400T,
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W800T M29W800B 8 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10|is by Byte / 20|is by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29W800T
M29W800B
x8/x16,
100ns
M29W800T,
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PDF
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Untitled
Abstract: No abstract text available
Text: M29F100T M29F100B 1 Mbit 128Kb x 8 or 64Kb x 16, Block Erase Single Supply Flash Memory • 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F100T
M29F100B
128Kb
10jas
M29F10OT,
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Untitled
Abstract: No abstract text available
Text: M29F400T M29F400B 4 Mbit x8/x16, Block Erase Single Supply Flash Memory • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 70ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)
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M29F400T
M29F400B
x8/x16,
10jas
M29F400T,
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5A negative regulator
Abstract: rs-12v 79HG VQA10
Text: A LAMBDA LINEAR REGULATORS LAS 79HG 5 AM P NEGATIVE ADJUSTABLE VOLTAGE REGULATOR ABSOLUTE MAXIMUM RATINGS PARAMETER • Guaranteed Power Dissipation: 50 Watts @ 50°C case • Guaranteed input-output differential: 2.6 Volts • Low noise, band gap reference
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5a Negative Adjustable Regulator
Abstract: No abstract text available
Text: SfiE D SEMTECH CORP LAS 79HG 013^13^ 00031flb 323 • SET 5 AMP NEGATIVE ADJUSTABLE VOLTAGE REGULATOR ABSOLUTE MAXIMUM RATINGS PARAMETER Input Voltage Power Dissipation Thermal Resis tance Junction To Case Operating Junction Tem perature Range Storage Tem
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00031flb
5a Negative Adjustable Regulator
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Untitled
Abstract: No abstract text available
Text: M29F400T M29F400B SGS-THOMSON IIIIMJì ILIì M W IIÈÌ 4 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|js by Byte / 1 6jas by Word typical
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OCR Scan
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M29F400T
M29F400B
x8/x16,
TSOP48
M29F400T,
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 90ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical
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M29W400T
M29W400B
512Kb
256Kb
10jas
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PDF
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Untitled
Abstract: No abstract text available
Text: M29F200T M29F200B SGS-THOMSON raD»H[Lll e'inM l)i!lD(ei 2 Mb (x8/x16, Block Erase) SINGLE SUPPLY FLASH MEMORY • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical
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M29F200T
M29F200B
x8/x16,
TSOP48
M29F200T,
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PDF
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Untitled
Abstract: No abstract text available
Text: M29F100T M29F100B SGS-THOMSON IIIIM Jì ILIì M W IIÈ Ì 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 70ns > FAST PROGRAMMING TIME - 10|is by Byte / 1 6|j,s by Word typical
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OCR Scan
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M29F100T
M29F100B
x8/x16,
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PDF
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Untitled
Abstract: No abstract text available
Text: M29W800AT M29W800AB 8 Mbit 1 Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACC ESS TIME: 80 ns ■ FAST PROGRAMMING TIME: 10|os typical
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M29W800AT
M29W800AB
512Kb
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PDF
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