PCN0005
Abstract: EP20K400
Text: PROCESS CHANGE NOTIFICATION EP20K400 DEVICE PROCESS MIGRATION Altera’s EP20K400 devices will be manufactured on a 0.22-micron process at TSMC, Taiwan. This process is a linear shrink of the existing 0.25-micron process, using the same equipment and process flow. These devices will be pin-, function-, timing-, and
|
Original
|
EP20K400
22-micron
25-micron
EP20K400
PCN0005
|
PDF
|
PCN9911
Abstract: "lot Code" altera EPF10K200E EPF10K50E micron Lot Code
Text: PROCESS CHANGE NOTIFICATION EPF10K50E AND EPF10K200E DEVICE PROCESS MIGRATION Altera’s EPF10K50E and EPF10K200E devices will be manufactured on a 0.22-micron process at WaferTech. This process is a linear shrink of the existing 0.25-micron process, using the same equipment and process flow. These devices will be pin-, function-,
|
Original
|
EPF10K50E
EPF10K200E
22-micron
25-micron
22-micron
PCN9911
"lot Code" altera
micron Lot Code
|
PDF
|
PCN0010
Abstract: epm3032 EPM3032A EPM3064A EPM3128A EPM3256A linear date code
Text: PROCESS CHANGE NOTIFICATION MAX 3000A DEVICE PROCESS TRANSITION Altera’s MAX 3000A devices will be transitioned to a 0.30-micron quad metal layer process at TSMC, Taiwan. This process is a linear shrink of the existing 0.35-micron quad metal layer process using the same equipment and process flow. These devices will
|
Original
|
30-micron
35-micron
35-micron
EPM3032A
EPM3064A
EPM3128A
PCN0010
epm3032
EPM3032A
EPM3064A
EPM3128A
EPM3256A
linear date code
|
PDF
|
PCN0008
Abstract: EPM7064AE programming codes EPM7032AE EPM7128AE EPM7256AE EPM7512AE altera date code
Text: PROCESS CHANGE NOTIFICATION MAX 7000AE DEVICE PROCESS TRANSITION Altera’s MAX 7000AE devices will be transitioned to a 0.30-micron quad metal layer process at TSMC, Taiwan. This process is a linear shrink of the existing 0.35-micron quad metal layer process using the same equipment and process flow. These devices will
|
Original
|
7000AE
30-micron
35-micron
35-micron
PCN0008
EPM7064AE
programming codes
EPM7032AE
EPM7128AE
EPM7256AE
EPM7512AE
altera date code
|
PDF
|
PCN9903
Abstract: altera date code EPF6010A EPF6016A EPF6024A
Text: PROCESS CHANGE NOTIFICATION FLEX 6000 DEVICES Overview Altera’s FLEX 6000 devices will be manufactured on a 0.30-µ process at WaferTech, a TSMC and Altera joint venture. This process is a linear shrink of the existing 0.35-µ process, using the same equipment and process flow. The new products will be pin-,
|
Original
|
EPF6010A,
EPF6016A,
EPF6024A
EPF6010A
EPF6016A
EPF6024A
NCA501234
ACA50YYWW
PCN9903
altera date code
EPF6010A
EPF6016A
|
PDF
|
PCN9915
Abstract: EPF10K50V "lot Code" altera EPF10K
Text: PROCESS CHANGE NOTIFICATION EPF10K50V DEVICE PROCESS TRANSITION Altera’s EPF10K50V devices will transition from a 0.30-micron triple metal layer to a 0.30-micron quad metal layer process using the same equipment and process flow. These devices will be pin-, function-, timing-, and programming file-compatible with existing
|
Original
|
EPF10K50V
30-micron
EPF10K50V
PCN9915
"lot Code" altera
EPF10K
|
PDF
|
81F64842B
Abstract: No abstract text available
Text: Introduction This document outlines Atmel’s process for conversion from FPGA/CPLD to ULC. Figure 1. ULC Conversion Flow Process FPGA/CPLD Netlist Retarget ULC Conversion Process Design & Supply Rules Verification Bonding Creation & Verification Scan, Bist, Jtag Insertion, ATPG Fault Coverage
|
Original
|
03-Dec-01
81F64842B
|
PDF
|
MITSUBISHI CAPACITOR
Abstract: paste capacitor SOLDERING REFLOW process mitsubishi SOP mitsubishi
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES SURFACE MOUNTING PROCESS 2.1 SURFACE MOUNTING PROCESS SEQUENCE This section shows the surface-mounting process flow chart. There are two soldering methods: the flow method and reflow method. In surface mounting, the latter is usually used.
|
Original
|
|
PDF
|
XH035
Abstract: CMOS Process Family XH035 cmos process family passive inductor process 0.6 um cmos process 0.35 um CMOS gate area
Text: 0.35 µm CMOS Process Family XH035 RF CMOS Modular mixed signal 0.35 µm CMOS process with passive Main Process Flow components available for mixed-signal/RF analog applications p-/p+ epi-substrate Independent retrograde n- and p-well Spiral top thick metal inductor
|
Original
|
XH035
CMOS Process Family
XH035 cmos process family
passive inductor process
0.6 um cmos process
0.35 um CMOS gate area
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet TIME-30 Process Control Stopwatch Optimize process phases by analyzing and precisely timing each task. When improving process flow, verify improvement times and cost savings on production floors or assembly lines with precise stopwatches. The TIME-30 offers built in temperature and
|
Original
|
TIME-30
TIME-30
99/100Sec)
877-AMPROBE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet TIME-20 Process Control Stopwatch Optimize process phases by analyzing and precisely timing each task. When improving process flow, verify improvement times and cost savings on production floors or assembly lines with precise stopwatches. n Chronograph: 1/100 stop watch, split/lap time
|
Original
|
TIME-20
99/100Sec)
877-AMPROBE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet TIME-10 Process Control Stopwatch Optimize process phases by analyzing and precisely timing each task. When improving process flow, verify improvement times and cost savings on production floors or assembly lines with precise stopwatches. n Chronograph: 1/100 stop watch, split/lap time
|
Original
|
TIME-10
99/100Sec)
877-AMPROBE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet TIME-10 Process Control Stopwatch Optimize process phases by analyzing and precisely timing each task. When improving process flow, verify improvement times and cost savings on production floors or assembly lines with precise stopwatches. n Chronograph: 1/100 stop watch, split/lap time
|
Original
|
TIME-10
IME-10
99/100Sec)
877-AMPROBE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Data Sheet TIME-20 Process Control Stopwatch Optimize process phases by analyzing and precisely timing each task. When improving process flow, verify improvement times and cost savings on production floors or assembly lines with precise stopwatches. n Chronograph: 1/100 stop watch, split/lap time
|
Original
|
TIME-20
99/100Sec)
877-AMPROBE
|
PDF
|
|
|
LCD based digital alarm clock with digital thermometer
Abstract: volume TACTILE SWITCH abb cm15 pt100 multiplexer CM15 ABB CM15 pt 100 temperature sensor RTD abb Electromagnetic flow meter ABB TECHNICAL CM30 heat exchanger process
Text: Data sheet DS/CM15–EN Rev. C ControlMaster CM15 Universal process indicator, 1/8 DIN Making process control easy Comprehensive display of process status — Crystal-clear, full-color TFT display — User-customizable Totalization and counter functions — Calculation and display of flow total values
|
Original
|
DS/CM15
LCD based digital alarm clock with digital thermometer
volume TACTILE SWITCH
abb cm15
pt100 multiplexer
CM15 ABB
CM15
pt 100 temperature sensor RTD abb
Electromagnetic flow meter
ABB TECHNICAL CM30
heat exchanger process
|
PDF
|
MIL-STD-883 Method 2010
Abstract: MIL-STD-883 method 2003
Text: HOLT PLASTIC PACKAGE PROCESS OPTIONS I = Industrial Grade -40°C to +85°C T = High Temp Grade (-55 °C to +125°C) M = Military Grade (-55°C to +125°C) PROCESS FLOW PROCESS STEP I T M INCOMING WAFER INSPECTION X X X WAFER PROBE 100% 100% 100% SAW X X
|
Original
|
MIL-STD-883,
MIL-STD-883 Method 2010
MIL-STD-883 method 2003
|
PDF
|
Mil-Std-883 Wire Bond Pull Method 2011
Abstract: mil-std-883 mil-std-883 2015 MIL-STD883 MIL-STD-883 Method 2010 MIL-STD-883 method 2011 mil-std-883* 2015 centrifuge
Text: HOLT CERAMIC PACKAGE PROCESS OPTIONS I = Industrial Grade -40°C to +85°C M = Military Grade (- 55°C to +125°) T = High Temp Grade (-55°C to +125°C) DSCC = Mil-STD-883 Compliant PROCESS FLOW PROCESS STEP I T M DSCC COMMENTS X X X X INCOMING WAFER INSPECTION
|
Original
|
Mil-STD-883
MIL-STD-883,
Mil-Std-883 Wire Bond Pull Method 2011
mil-std-883 2015
MIL-STD883
MIL-STD-883 Method 2010
MIL-STD-883 method 2011
mil-std-883* 2015
centrifuge
|
PDF
|
RH A4 2A 250V
Abstract: oven rtd sensor IEC751 pa2009 PT100 ABB
Text: Data Sheet 100mm Process Recorder SS/SR100B_5 SR100B 3- or 6-trace recording on a 100mm chart – common time base for instant process comparison High clarity liquid crystal display – for process value, units and channel tags Universal process inputs
|
Original
|
100mm
SR100B
IP65/NEMA3,
100mmion.
C100/0700)
SS/SR100B
RH A4 2A 250V
oven rtd sensor
IEC751
pa2009
PT100 ABB
|
PDF
|
bsim3v3
Abstract: C035ANV IMD2 transistor pmos Vt poly dielectric capacitor
Text: ANV Process ID: SM/SN [C035ANV] Applications Main Process Flow Situations where single-cell operation or • P Substrate extended battery life are key, e.g: • High Voltage Wells optional
|
Original
|
C035ANV]
bsim3v3
C035ANV
IMD2 transistor
pmos Vt
poly dielectric capacitor
|
PDF
|
CS1D-PA207R
Abstract: No abstract text available
Text: PLC-based Process Control Series Programmable Controllers CS1W-LC Loop Control Boards/Units Ver. 3.0 Version Upgrade CS1D-CPU P CS1D Process CPU Units (for Duplex-CPU Systems) WS02-LCTC1-EV5 CX-Process Tool Ver. 5.0 (Version Upgrade) CS1W-P Process Analog I/O Units 8-input Models Added to Series
|
Original
|
WS02-LCTC1-EV5
16-input
NL-2132
CS1D-PA207R
|
PDF
|
TEMIC PLD
Abstract: signal path designer
Text: Conversion Process Conversion Process Conversion, Basic Process At its most basic level, the process of going from an FPGA or PLD design into a lower cost alternative device can be broken down into three steps Figure 1 . The first step is to convert the netlist from the FPGA or PLD form
|
Original
|
|
PDF
|
cmos transistor 0.35 um
Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
Text: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation
|
Original
|
|
PDF
|
SG 1050
Abstract: C06 60V polysilicon fuse
Text: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells
|
Original
|
|
PDF
|
bsim3v3
Abstract: C08p
Text: 0.7µ µm 13.5V CMOS Process ID: SE/SF [C08p] Applications Main Process Flow • High voltage interface to mixed signal • P Substrate circuits, e.g: LCD display drivers, Power • Twin Wells
|
Original
|
|
PDF
|
