3001G
Abstract: 3007G PR3001G PR3007G
Text: LITE-ON SEMICONDUCTOR PR3001G thru PR3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop
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PR3001G
PR3007G
DO-201AD
DO-201AD
01-Dec-2000,
KDEF01
3001G
3007G
PR3007G
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3001G
Abstract: 3007G PR3001G PR3007G
Text: LITE-ON SEMICONDUCTOR PR3001G thru PR3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop
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PR3001G
PR3007G
DO-201AD
DO-201AD
3001G
3007G
PR3007G
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FR301
Abstract: FR304 FR307 PR3001G PR3007G DS26003
Text: FR301 - FR307 3.0A FAST RECOVERY RECTIFIER NOT RECOMMENDED FOR NEW DESIGNS, PLEASE USE PR3001G - PR3007G Features • · · · · Low Reverse Recovery Time Trr Low Reverse Current Low Forward Voltage Drop High Current Capability Plastic Material - UL Recognition 94V-0
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FR301
FR307
PR3001G
PR3007G
DO-201AD
DO-201AD,
MIL-STD-202
temperatur04
FR305
FR304
FR307
PR3007G
DS26003
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Untitled
Abstract: No abstract text available
Text: PR3007G Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current3.0 V(RRM)(V) Rep.Pk.Rev. Voltage1.0k t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.3
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PR3007G
Time500n
Current100u
StyleDO-201AD
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Untitled
Abstract: No abstract text available
Text: LITE ON POWER SEMICONDUCTOR PR3001G thru PR3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current
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PR3001G
PR3007G
DO-201AD
DO-201AD
24-May-2000
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3007g
Abstract: 3001G PR3001G PR3007G
Text: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak
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PR3001G
PR3007G
DO-201AD
MIL-STD-202,
DS27003
3007g
3001G
PR3007G
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3001G
Abstract: PR3001G PR3007G
Text: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Die Construction Fast Switching for High Efficiency Surge Overload Rating to 125A Peak B A Low Reverse Leakage Current A Lead Free Finish, RoHS Compliant Note 4
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PR3001G
PR3007G
DO-201AD
J-STD-020C
MIL-STD-202,
DS27003
3001G
PR3007G
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Untitled
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR PR3001G thru PR3007G REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 3.0 Amperes FAST RECOVERY GLASS PASSIVATED RECTIFIERS DO-201AD FEATURES Fast switching for high efficiency Glass passivated chip Low reverse leakage current Low forward voltage drop
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PR3001G
PR3007G
DO-201AD
DO-201AD
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Untitled
Abstract: No abstract text available
Text: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop
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PR3001G
PR3007G
DO-201AD
MIL-STD-202,
DS27003
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3007g
Abstract: 3001G PR3001G PR3007G
Text: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak
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PR3001G
PR3007G
DO-201AD
MIL-STD-202,
DS27003
3007g
3001G
PR3007G
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DO-201AD
Abstract: DS27003
Text: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency B A High Current Capability and Low Forward Voltage Drop A Surge Overload Rating to 125A Peak
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PR3001G
PR3007G
DO-201AD
J-STD-020C
MIL-STD-202,
PR3001G-B
PR3001G-T
PR3002G-B
PR3002G-T
PR3003G-B
DS27003
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3001G
Abstract: PR3001G PR3007G
Text: NOT RECOMMENDED FOR NEW DESIGN PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features • • • • • Glass Passivated Die Construction Fast Switching for High Efficiency Surge Overload Rating to 125A Peak Low Reverse Leakage Current
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PR3001G
PR3007G
DO-201AD
J-STD-020C
MIL-STD-202,
DS27003
3001G
PR3007G
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SMD Transistors w04 sot-23
Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.
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represent9-14
SMD Transistors w04 sot-23
transistor SOT-23 w04
SB050 transistor
IN4728A
mosfet SMD w04
SN30SC4
smd diode code gs1m
W01 SMD mosfet
W04 sot 23
1s355
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smd marking 911 zener
Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.
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M5263B,
ZMM5264B,
ZMM5265B,
ZMM5266B,
ZMM5267B,
ZMM56,
ZMM62,
ZMM68,
ZMM75,
smd marking 911 zener
d3g smd
NPN Transistor smd code LY 83
marking codes transistors a8 sot-23
TRANSISTOR SMD MARKING CODE s2a
1045ct mosfet
SOD-123 a18
W06* MARKING smd code
KBJ 3580
6045pt
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melf diode marking
Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish
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5KE100A-B
5KE100A-T
5KE100CA-B
5KE100CA-T
5KE10A-A
5KE10A-B
5KE10A-T
5KE10CA-B
5KE10CA-T
5KE110A-B
melf diode marking
A180-WLA
RS503s
SBR130S3
Schottky melf
hall sensor 35l
5KE91A-B
PR1005G-A
GBPC3504L
STPR2020CT
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BY228 equivalent
Abstract: BYD14G RU20A cross reference
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vSE-db0112-1009
BY228 equivalent
BYD14G
RU20A cross reference
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Untitled
Abstract: No abstract text available
Text: LITEME SEMICONDUCTORS PR3001G thru PR3007G V O L T A G E RANGE 50 to 1000 V olts CURRENT 3.0 Amperes FEATURES • DO-201 AD Low cost • Glass passivated ju n c tio n • Low leakage • Low forw ard voltage drop • High cu rre n t cap ability • • 210 5.3
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OCR Scan
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PDF
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PR3001G
PR3007G
DO-201
DO-15
0201AD
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3001G
Abstract: PR3001G PR3007G
Text: PR3001G “ PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak
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OCR Scan
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PDF
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PR3001G
PR3007G
MIL-STD-202,
DO-201AD
DS27003
3001G
PR3007G
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Untitled
Abstract: No abstract text available
Text: PR3001G-PR3007G Vishay Lite-On Power Semiconductor ▼ 3.0A Fast Recovery Glass Passivated Rectifier Features • G la s s p a s s iv a te d die c o n s tru c tio n • D iffu se d ju n c tio n • F a st s w itc h in g fo r h igh e ffic ie n c y • H igh c u rre n t c a p a b ility and lo w fo rw a rd
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OCR Scan
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PR3001G-PR3007G
3001G
3002G
300iBHAY
D-74025
24-Jun-98
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3001G
Abstract: PR3001G PR3007G
Text: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current
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OCR Scan
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PDF
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PR3001G
PR3007G
MIL-STD-202,
DQ-201AD
DS27003
PR3007G
3001G
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Untitled
Abstract: No abstract text available
Text: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current
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OCR Scan
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PDF
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PR3001G
PR3007G
DO-201AD
IL-STD-202,
DS27003
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Untitled
Abstract: No abstract text available
Text: LITEM CI SEMICONDUCTORS PR3001G thru PR3007G DO-201 AD FEATURES • L o w cost • Glass passivated ju n c tio n • L o w leakage • L o w f o r w a r d v o lta g e d ro p • H ig h c u r r e n t c a p a b ility • •210 IS.3I .188 4.8 Li E a sily c le a n e d w it h F r e o n , A lc o h o l, C h lo ro th e n e and
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OCR Scan
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PDF
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PR3001G
PR3007G
DO-201
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Untitled
Abstract: No abstract text available
Text: PR3001G - PR3007G 3.0A FAST RECOVERY GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current
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OCR Scan
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PDF
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PR3001G
PR3007G
DO-201
MIL-STD-202,
10QNI
DS27003
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY GLASS PASSIVATED RECTIFIERS OPERATING/STORAGE TEMPERATURE RANGE -6 5 °C to +150°C Maximum Peak ;'f! JilSflftMif? Voltage Maximum Average • Rectified Current @ Half-Wave Resistive Load 60Hz PRV lo @ TA V PK Maximum Reverse Recovery Time Maximum Reverse
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OCR Scan
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PASSIVATED/DQ-201AD
PR3001G
PR3002G
PR3003G
PR3004G
PR3005G
PR3006G
PR3007G
25rge
PASSIVATED/DO-41
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