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    PQ26/20 POWER SUPPLY Search Results

    PQ26/20 POWER SUPPLY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    PQ26/20 POWER SUPPLY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BPQ26

    Abstract: 25-1112CP BPQ32 PC44PQ50 PC44PQ32 BPQ50/50 FPQ-26 FPQ-35 FPQ-50 16-1114CP
    Text: Ferrite Cores PQ Series For Power Supply PQ Cores A2 Type PQ20/16 PQ20/20 PQ26/20 PQ26/25 PQ32/20 PQ32/30 PQ35/35 PQ40/40 PQ50/50 2D Dimensions mm A1 20.5±0.4 20.5±0.4 26.5±0.45 26.5±0.45 32±0.5 32±0.5 35.1±0.6 40.5±0.9 50±0.7 A2 14±0.4 14±0.4


    Original     		PDF PQ20/16 PQ20/20 PQ26/20 PQ26/25 PQ32/20 PQ32/30 PQ35/35 PQ40/40 PQ50/50 PC44PQ20/16Z-12 BPQ26 25-1112CP BPQ32 PC44PQ50 PC44PQ32 BPQ50/50 FPQ-26 FPQ-35 FPQ-50 16-1114CP

    SL36T6A1M1C-A60

    Abstract: pq26
    Text: SL36T6A1M1C-A60 1M X 36 Bits DRAM SIMM with Fast Page Mode FPM FEATURES • Performance range: tRC tRAC tCAC 60ns 15ns • • • • • • • • GENERAL DESCRIPTION The SiliconTech SL36T6A1M1C-A60 is a 1MB x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM). The


    Original     		PDF SL36T6A1M1C-A60 SL36T6A1M1C-A60 42-pin 400-mil 24-pin 300-mil 72-pin 110ns cycles/16ms DQ9-16 pq26

    edo dram 60ns 72-pin simm

    Abstract: SL36S4B4M2F-A60 SL36T4B4M2F-A60
    Text: SL36 S/T 4B4M2F-A60 4M X 36 Bits DRAM 72-Pin SIMM with Extended Data Out (EDO) and ECC FEATURES • Performance range: tCAC tRC tRAC 60ns 15ns • • • • • • • • GENERAL DESCRIPTION The SiliconTech SL36(S/T)4B4M2F-A60 is a 4M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).


    Original     		PDF 4B4M2F-A60 72-Pin 4B4M2F-A60 24pin 300-mil 104ns cycles/32ms A0-A10 edo dram 60ns 72-pin simm SL36S4B4M2F-A60 SL36T4B4M2F-A60

    Untitled

    Abstract: No abstract text available
    Text: SL36 S/T 4B4M2C-Axx 4M X 36 BITS DRAM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL…-A60 60ns 15ns 110ns SL…-A70 70ns 20ns 130ns The SiliconTech SL36(S/T)4B4M2C-Axx is a 4MB x 36 bits


    Original     		PDF 110ns 24-pin 28pin 72-pin 130ns cycles/3-A10 A0-A10

    Untitled

    Abstract: No abstract text available
    Text: SL36 S/T 4B8M2C-Axx 8M X 36 BITS DRAM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL…-A60 60ns 15ns 110ns SL…-A70 70ns 20ns 130ns The SiliconTech SL36(S/T)4B8M2C-Axx is a 8MB x 36 bits


    Original     		PDF 110ns 24-pin 28pin 72-pin 130ns DQ18-21 A0-A10 A0-A10 DQ22-25

    8mx32 simm 72 pin

    Abstract: 32MB SIMM
    Text: IBM11D2360ED2M x 36 QC10/10, 5.0V, Sn/Pb. IBM11E2360ED2M x 36 QC10/10, 5.0V, Au . IBM11D4360B IBM11D8360B IBM11E4360B IBM11E8360B 4M/8M x 36 DRAM Module Features • High Performance CMOS process • Single 5V, ± 0.5V Power Supply • All inputs & outputs are fully TTL & CMOS


    Original     		PDF IBM11D2360ED2M QC10/10, IBM11E2360ED2M IBM11D4360B IBM11D8360B IBM11E4360B IBM11E8360B 72-Pin 8mx32 simm 72 pin 32MB SIMM

    PQ2620

    Abstract: pq26
    Text: ELECTRICAL CHARACTERISTICS: Inductance: 1500uH+/-25% @10kHz,0.1V Turns Ratio: 1-6/7-12 : 1:5+/-5% @10kHz,0.1V. Capacity : 95w 7 1 pr i 31.0 max s ec 12 6 FEATURES: Isolation: pri to sec: 1000Vac @50Hz,2Sec wdgs to core: 1000Vac @50Hz,2Sec THT Style SCHEMATIC


    Original     		PDF 1500uH 10kHz 1000Vac PQ26/20 TMP60247CT TMD20039 PQ2620 pq26

    Untitled

    Abstract: No abstract text available
    Text: IBM11D4480BA4M x 36 EOS11/11, 5.0V, Sn/Pb. IBM11E4480BA4M x 36 EOS11/11, 5.0V, Au. IBM11D4480B IBM11E4480B 4M x 36 ECC-on-SIMM Features • Single-error-correct SEC high-speed ECC algorithm • Single 5.0V ± 0.25V Power Supply • All inputs & outputs are fully TTL & CMOS


    Original     		PDF IBM11D4480BA4M EOS11/11, IBM11E4480BA4M IBM11D4480B IBM11E4480B 72-Pin 130ns

    2m x 36

    Abstract: No abstract text available
    Text: = = = = •= ■ = IBM11D2360L IBM11E2360L 2M x 36 DRAM Module Features • Single 5V, ± 0.5V Power Supply • Low current consumption • All inputs & outputs are fully TTL & CMOS compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only and CBR


    OCR Scan     		PDF IBM11D2360L IBM11E2360L 72-Pin 110ns 130ns 07H4992 MMDS31DSU-00 IBM11E2360L 2m x 36

    RIR AS3 ON

    Abstract: No abstract text available
    Text: IB M 1 1 D 1 3 6 0 L IB M 1 1 E 1 3 6 0 L 1 M x 3 6 D R A M Module Features • Single 5V, ± 0.5V Power Supply • Low current consumption • All inputs & outputs are fully TTL & CMOS compatible • Fast Page Mode access cycle • Refresh Modes: RAS-Only and CBR


    OCR Scan     		PDF 72-Pin 110ns 130ns 07H4991 MMDS30DSU-00 IBM11D1360L IBM11E1360L RIR AS3 ON

    IC 1496 function

    Abstract: No abstract text available
    Text: IBM11S2360NN IBM11S2360NL 2M x 36 SODIMM Module Features • 7 2 -P in S m all O utline D ual-In -Lin e M e m o ry M o du le • Perform ance: I rac RAS Access Time All inputs & outputs a re T T L & C M O S com patible Fast P a g e M o d e a c c e ss cycle


    OCR Scan     		PDF IBM11S2360NN IBM11S2360NL 110ns 130ns 03H7118 MMDJ08DSU-00 IBM11S2360NL IC 1496 function

    jeida dram 88 pin

    Abstract: No abstract text available
    Text: IBM11J2360BL 2M x 36 5.0V IC D R A M C ard Features • Industry Standard 88Pin IC DRAM Card • Performance: -70 I rac RAS Access Time 70ns tcAC CAS Access Time 29ns Ua Access Time From Address 46ns I rc Cycle Time 130ns tpc Fast Page Mode Cycle Time 50ns


    OCR Scan     		PDF IBM11J2360BL 88Pin 130ns 128ms IBM11J2360BL 88-pin MMDI06DSU-01 11J2360BL jeida dram 88 pin

    Untitled

    Abstract: No abstract text available
    Text: IBM11S1360NN IBM11S1360NL 1M x 36 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 ÏRAC RAS Access Time 60ns 70ns tcAG CAS Access Time 15ns 20ns t/VA Access Time From Address 30ns 35ns tRC Cycle Time 110ns 130ns


    OCR Scan     		PDF IBM11S1360NN IBM11S1360NL 72-Pin 256ms 110ns 130ns IBM11S1360NN/L 03H7115 MMDJ04DSU-00

    IBM 1Mx4

    Abstract: No abstract text available
    Text: IB M 1 1 D 1 4 8 0 B A IB M 1 1 E 1 4 8 0 B A 1M x 36 ECC-on-SIMM Features Single-error-correct SEC high-speed ECC • 72-Pin JEDEC-Standard Single In-Line Memory Module algorithm • Performance: Single 5V ± 0.25V Power Supply All inputs & outputs are fully TTL & C M O S


    OCR Scan     		PDF 72-Pin 130ns 11D1480BA MMDS04DSU-01 IBM11D1480BA IBM11E1480BA IBM11E1480BA IBM 1Mx4

    Untitled

    Abstract: No abstract text available
    Text: IBM11S1360BL IM x 36 SODIMM Module Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: -60 -70 60ns 70ns tcAC CAS Access Time 15ns 20ns Iaa Access Time From Address 30ns 35ns I rac RAS Access Time tflc Cycle Time 110ns 130ns tpc Fast Page Mode Cycle Time 40ns


    OCR Scan     		PDF IBM11S1360BL 72-Pin 110ns 130ns 128ms IBM11S1360BL 07H4034 MMDJ10DSU-00 11S1360BL

    Untitled

    Abstract: No abstract text available
    Text: IBM11S4360DN IBM11S4360DL 4M x 36 SODIMM M odule Features • 72-Pin Small Outline Dual-In-Line Memory Module • Performance: tRAC RAS Access Time ICAC CAS Access Time -60 -70 60ns 70ns 15ns 20ns Iaa Access Time From Address 30ns 35ns I rc Cycle Time 110ns 130ns


    OCR Scan     		PDF IBM11S4360DN IBM11S4360DL 72-Pin 256ms 110ns 130ns IBM11S4360DN/L 72-pised 07H4996 MMDJ01DSU-00

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1J 4 3 6 0 D L 4M X 36 5.0V IC D R A M C ard Features • Industry S tan dard 8 8 P in IC D R A M Card • Single 5.0V, ± 0 .2 5 V P ow er S u pply • P erform ance: • All inputs buffered excep t R A S and DATA inputs • Multiple R A S inputs for x 1 8 or x 3 6 selectability


    OCR Scan     		PDF 130ns 64G1724 MMDI19DSU-00 11J4360DL IBM11J4360DL

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 D 8 4 8 0 B G IB M 1 1 E 8 4 8 0 B G 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: I • Single-error-correct SEC high-speed ECC algorithm • Single 5.0V ± 0.25V Power Supply • All inputs & outputs are fully TTL & CMOS


    OCR Scan     		PDF 72-Pin 130ns IBM11D8480BG IBM11E8480BG

    jeida dram 88 pin

    Abstract: No abstract text available
    Text: IBM11J8360BL 8M X 36 5.0V IC DRAM Card Features • Industry Standard 88Pin IC DRAM Card • Performance: • • • • • • Single 5.0V, ± 0.25V Power Supply All inputs buffered except RAS and DATA inputs Multiple RAS inputs for x18 or x36 selectabillty


    OCR Scan     		PDF IBM11J8360BL 88Pin 130ns 256ms IBM11J8360DL 11J8360BL 07H4032 MMDI29DSU-00 jeida dram 88 pin

    Untitled

    Abstract: No abstract text available
    Text: IB M 1 1 D 4 4 8 0 B IB M 1 1 E 4 4 8 0 B 4M x 36 ECC-on-SIMM Features Single-error-correct SEC high-speed ECC algorithm Single 5.0V ± 0.25V Power Supply All inputs & outputs are fully TTL & C M O S compatible Fast Page Mode access cycle Refresh Modes: RAS-Only and CBR


    OCR Scan     		PDF 72-Pin 130ns 11D4480B IBM11D4480B IBM11E4480B

    1E83

    Abstract: fast 555
    Text: 5 = = — = T= IB M 11D8 3 6 0 B IB M 1 1E83 6 0 B P relim in ary 8M x 36 D R A M M odule Features • 72-Pin JEDEC Standard Single-ln-Line Memory Module • Performance: 1rac RAS Access Time 'CAC CAS Access Time •m Access Time From Address >RC Cycle Time


    OCR Scan     		PDF 72-Pin 110ns 130ns IBM11D8360B IBM11E8360B 8360BA) 03H7151 MMDS27DSU-00 1E83 fast 555

    Untitled

    Abstract: No abstract text available
    Text: IBM11D8480B IBM11E8480B 8M x 36 ECC-on-SIMM Features • 72-Pin JEDEC-Standard Single In-Line Memory Module • Performance: Single-error-correct SEC high-speed ECC algorithm Single 5.0V ± 0.25V Power Supply All inputs & outputs are fully TTL & CMOS compatible


    OCR Scan     		PDF IBM11D8480B IBM11E8480B 72-Pin 130ns 26H2528 SA14-4319-01 000224b

    E1338

    Abstract: No abstract text available
    Text: IBM11J8360DL 8M X 36 5.0V IC D R A M C ard Features • Industry S tan dard 8 8 P in IC D R A M Card • Single 5.0V , ± 0 .2 5 V P ow er S u pply • Perform ance: • All inputs buffered excep t R A S and DATA inputs • Multiple R A S inputs for x l 8 or x 3 6 selectabiiity


    OCR Scan     		PDF IBM11J8360DL 130ns 64G1726 MMDI21DSU-00 E1338

    jeida 88 pin memory card

    Abstract: dram card 60 pin jeida dram 88 pin dram 88 pin jeida 88 pin ic dram dram card 30 pin 5v dram 88 pin card
    Text: Application Note 88 Pin 1CDRAM Card Characteristics Basic Architecture DRAM Addressing Effects A listing of the 88 Pin 1C DRAM Card Pin Assign­ ments is on page 1370 . IC DRAM cards are designed to provide for a multi­ tude of potential DRAM chip depth granularities as


    OCR Scan     		PDF 88-pin jeida 88 pin memory card dram card 60 pin jeida dram 88 pin dram 88 pin jeida 88 pin ic dram dram card 30 pin 5v dram 88 pin card