20NF2
Abstract: 20nf20 STL20NF20
Text: STL20NF20 N-channel 200 V, 0.10 Ω, 15 A PowerFLAT 5x6 low gate charge STripFET™ Power MOSFET Features Type VDSS STL20NF20 RDS(on) 200 V < 0.125 Ω • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested ID PW 15 A 60 W PowerFLAT™ (5x6)
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STL20NF20
20NF2
20nf20
STL20NF20
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Untitled
Abstract: No abstract text available
Text: STL85N6F3 N-channel 60 V, 0.0057 Ω, 19 A PowerFLAT 5x6 STripFET™ Power MOSFET Features Type VDSS STL85N6F3 60 V RDS on max ID < 0.0065 Ω 19 A (1) 1. The value is rated according Rthj-pcb 1 2 • ■ 3 Extremely low on-resistance RDS(on) 4 PowerFLAT™ 5x6
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STL85N6F3
STL85N6F3
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20NF2
Abstract: STL20NF20 20nf20
Text: STL20NF20 N-channel 200 V, 0.10 Ω, 15 A PowerFLAT 5x6 low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) 200 V < 0.125 Ω STL20NF20 • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested ID PW 15 A 60 W PowerFLAT™ (5x6)
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STL20NF20
20NF2
STL20NF20
20nf20
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Untitled
Abstract: No abstract text available
Text: STL42P4LLF6 P-channel 40 V, 0.016 Ω typ., 10 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification • RDS on * Qgindustry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness
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STL42P4LLF6
STL42P4LLF6
42P4LLF6
DocID025618
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Untitled
Abstract: No abstract text available
Text: FERD15S50 Field effect rectifier Datasheet − production data Features K K • ST proprietary process • Stable leakage current over reverse voltage • Low forward voltage drop A A • High frequency operation Description PowerFLAT 5x6 FERD15S50DJF Table 1. Device summary
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FERD15S50
FERD15S50DJF
DocID025051
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Untitled
Abstract: No abstract text available
Text: STL90N3LLH7 N-channel 30 V, 0.0034 Ω typ., 24 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - preliminary data • Very low on-resistance Very low Qg High avalanche ruggedness High junction temperature capability
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STL90N3LLH7
STL90N3LLH7
90N3LLH7
DocID025168
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Untitled
Abstract: No abstract text available
Text: STL220N3LLH7 N-channel 30 V, 0.00085 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1
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STL220N3LLH7
AM15540v2
DocID024732
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Untitled
Abstract: No abstract text available
Text: STL35N6F3 N-channel 60 V, 0.019 Ω, 10 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS on max ID STL35N6F3 60 V < 0.022 Ω 10 A • N-channel enhancement mode ■ 100% avalanched rated
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STL35N6F3
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Untitled
Abstract: No abstract text available
Text: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 40 A, P-channel 30 V, 0.028 Ω typ., 30 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet — preliminary data Features Type VDSS STL40C30H3LL N-channel STL40C30H3LL (P-channel) RDS(on) max
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STL40C30H3LL
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FD20U60
Abstract: No abstract text available
Text: FERD20U60 Field effect rectifier Datasheet − production data Description A This single rectifier is based on a proprietary technology, enabling to achieve the best in class VF/IR trade-off for a given silicon surface. A K A Packaged in PowerFLAT 5x6, this device is
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FERD20U60
FERD20U60DJF
DocID025986
FD20U60
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dt 420
Abstract: 70n10
Text: STL70N10F3 N-channel 100 V, 0.0072 Ω, 16 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Preliminary data Features Order code VDSS RDS on max ID STL70N10F3 100 V 0.0084 Ω 16 A • Improved die-to-footprint ratio ■ Very low thermal resistance
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STL70N10F3
dt 420
70n10
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Untitled
Abstract: No abstract text available
Text: STL160NS3LLH7 N-channel 30 V, 0.0016 Ω typ., 36 A STripFET VII DeepGATE™ Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - target specification Features Order code VDS RDS on max ID STL160NS3LLH7 30 V 0.0021 Ω 36 A • Very low on-resistance
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STL160NS3LLH7
DocID024783
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Untitled
Abstract: No abstract text available
Text: STL110NS3LLH7 N-channel 30 V, 0.0027 Ω typ., 28 A STripFET VII DeepGATE™ Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - preliminary data Features Order code VDS RDS on max ID STL110NS3LLH7 30 V 0.0034 Ω 28 A • Very low on-resistance
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STL110NS3LLH7
DocID024570
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STL56N3LLH5
Abstract: No abstract text available
Text: STL56N3LLH5 N-channel 30 V, 0.008 Ω, 15 A PowerFLAT 5x6 STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL56N3LLH5 30 V <0.009 Ω 15 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■
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STL56N3LLH5
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Untitled
Abstract: No abstract text available
Text: STL160NS3LLH7 N-channel 30 V, 0.0016 Ω typ., 36 A STripFET VII DeepGATE™ Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - production data Features Order code VDS RDS on max ID STL160NS3LLH7 30 V 0.0021 Ω 36 A • Very low on-resistance
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STL160NS3LLH7
DocID024783
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Untitled
Abstract: No abstract text available
Text: STL160NS3LLH7 N-channel 30 V, 0.0016 Ω typ., 36 A STripFET VII DeepGATE™ Power MOSFET plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - production data Features Order code VDS RDS on max ID STL160NS3LLH7 30 V 0.0021 Ω 36 A • Very low on-resistance
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STL160NS3LLH7
DocID024783
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STL100N6LF6
Abstract: No abstract text available
Text: STL100N6LF6 N-channel 60 V, 0.0038 Ω, 22 A, PowerFLAT 5x6 STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL100N6LF6 60 V < 0.0045 Ω 22 A • Low gate charge ■ Very low on-resistance ■ High avalance ruggedeness
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STL100N6LF6
100N6LF6
STL100N6LF6
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Untitled
Abstract: No abstract text available
Text: STL25N15F4 N-channel 150 V, 0.057 Ω, 6 A, PowerFLAT 5x6 STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STL25N15F4 150 V < 0.063 Ω 6A • N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance
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STL25N15F4
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Untitled
Abstract: No abstract text available
Text: STL90N10F7 N-channel 100 V, 0.008 Ω typ., 16 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features Order code VDS RDS on max ID PTOT STL90N10F7 100 V 0.0095 Ω 16 A 5W • Extremely low gate charge
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STL90N10F7
DocID024551
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N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Abstract: No abstract text available
Text: STL10DN15F3 N-channel 150 V, 0.20 Ω typ., 2.8 A STripFET III Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDS@ TJmax RDS on max ID STL10DN15F3 150 V <0.22 Ω 2.8 A • Improved die-to-footprint ratio
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STL10DN15F3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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75n3l
Abstract: STL75N3LLZH5 17661 75n3
Text: STL75N3LLZH5 N-channel 30 V, 0.0055 Ω, 19 A PowerFLAT 5x6 STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL75N3LLZH5 30 V <0.0061 Ω 19 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark
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STL75N3LLZH5
STL75N3LLZH5
75n3l
17661
75n3
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stl160N
Abstract: 160n3l
Text: STL160N3LLH6 N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features Order code VDSS RDS(on) max ID STL160N3LLH6 30 V 0.0013 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark
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STL160N3LLH6
STL160N3LLH6
stl160N
160n3l
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Untitled
Abstract: No abstract text available
Text: STL100N6LF6 N-channel 60 V, 0.0038 Ω, 22 A, PowerFLAT 5x6 STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID STL100N6LF6 60 V < 0.0045 Ω 22 A • Low gate charge ■ Very low on-resistance ■ High avalance ruggedeness
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STL100N6LF6
100in
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Abstract: No abstract text available
Text: STL80N75F6 N-channel 75 V, 0.0051 Ω, 18 A, PowerFLAT 5x6 STripFET™ VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STL80N75F6 75 V < 0.0063 Ω 18 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness
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STL80N75F6
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