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    POWER TRANSISTOR MEX Search Results

    POWER TRANSISTOR MEX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR MEX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tip122 tip127 audio board

    Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
    Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents


    Original     		PDF Power247TM, tip122 tip127 audio board BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920

    BUJ103AX

    Abstract: BP317 BU1706AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ103AX SCA60 135104/240/02/pp12 BUJ103AX BP317 BU1706AX

    BP317

    Abstract: BU1706AX BUJ204AX
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended


    Original     		PDF BUJ204AX SCA60 135104/204/02/pp12 BP317 BU1706AX BUJ204AX

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use


    Original     		PDF BUJ103A O220AB SCA60 135104/240/02/pp12

    BUJ204A

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for


    Original     		PDF BUJ204A O220AB SCA60 135104/240/02/pp12 BUJ204A

    TRANSISTOR C 2026

    Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
    Text: Power Transistor PNP 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application TO-3P Mechanical Data Case: TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026


    Original     		PDF 2SB817E 2SB817E MIL-STD-750, TRANSISTOR C 2026 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817

    1N4001 transistor free

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
    Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


    Original     		PDF BU323AP BU323AP r14525 BU323AP/D 1N4001 transistor free BC337 figure 1N4001 BC337 BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn

    2N6191

    Abstract: 2N5337 IC 7403 AM503 MJE1320 MR856 P6302
    Text: ON Semiconductort NPN Silicon Power Transistor MJE1320 SWITCHMODEt Series POWER TRANSISTOR 2 AMPERES 900 VOLTS 80 WATTS This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for line–operated SWITCHMODE


    Original     		PDF MJE1320 220AB r14525 MJE1320/D 2N6191 2N5337 IC 7403 AM503 MJE1320 MR856 P6302

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF power LDMOS transistor Objective specification 1998 Nov 19 Objective specification UHF power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION • Easy power control


    Original     		PDF M3D427 BLF2048 OT539A SCA60 125108/00/02/pp8

    2N3442

    Abstract: 4422 datasheet power transistor audio amplifier 500 watts 2N3442-D
    Text: ON Semiconductort 2N3442 High-Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. 10 AMPERE POWER TRANSISTOR


    Original     		PDF 2N3442 204AA r14525 2N3442/D 2N3442 4422 datasheet power transistor audio amplifier 500 watts 2N3442-D

    BUH100

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductort BUH100 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS The BUH100 has an application specific state–of–art die designed for use in 100 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		PDF BUH100 BUH100 r14525 BUH100/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    BUH51

    Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
    Text: ON Semiconductort BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state–of–art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		PDF BUH51 BUH51 r14525 BUH51/D MJE210 MPF930 MTP12N10 MTP8P10 MUR105

    MTP12N10

    Abstract: MTP8P10 MUR105 BUH150 MJE210 MPF930
    Text: ON Semiconductort BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state–of–art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large


    Original     		PDF BUH150 BUH150 r14525 BUH150/D MTP12N10 MTP8P10 MUR105 MJE210 MPF930

    BLF1048

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLF1048 OT502A 125108/00/02/pp6 BLF1048 BP317

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047 UHF power LDMOS transistor Preliminary specification 1998 Nov 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2047 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLF2047 BLF2047 OT502A SCA60

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Objective specification 1998 Apr 14 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF1046 PINNING - SOT467A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D381 BLF1046 BLF1046 OT467A OT467A) SCA59 125108/00/01/pp8

    BLF1043

    Abstract: SOT538
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF1043 UHF power LDMOS transistor Preliminary specification 2001 Jan 23 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1043 PINNING - SOT538A FEATURES • High power gain


    Original     		PDF M3D438 BLF1043 OT538A 603516/02/pp8 BLF1043 SOT538

    33 GP

    Abstract: BLF2045 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF2045 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2045 PINNING - SOT467A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D381 BLF2045 OT467A budgetnum/printrun/ed/pp11 33 GP BLF2045 BP317

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLF2043 UHF power LDMOS transistor Objective specification 1999 Mar 18 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2043 PINNING - SOT538A FEATURES • High power gain


    Original     		PDF M3D438 BLF2043 BLF2043 OT538A OT538A) SCA63

    TEKELEC

    Abstract: 1800 ldmos sot540a transistor 2001 H1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF647 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D392 BLF647 BLF647 OT540A MBK777 budgetnum/printrun/ed/pp15 TEKELEC 1800 ldmos sot540a transistor 2001 H1

    M3D392

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Objective specification 1998 Apr 16 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF861 PINNING - NO405 FEATURES • High power gain PIN DESCRIPTION • Easy power control


    Original     		PDF M3D392 BLF861 MBK777 BLF861 NO405 SCA59 125108/00/01/pp8 M3D392

    BLF1047

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 1999 Jul 12 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 FEATURES PINNING - SOT541A • High power gain PIN DESCRIPTION


    Original     		PDF M3D390 BLF1047 OT541A Electronics1999 BLF1047 BP317

    BLF1046

    Abstract: BP317 TEKELec 467
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification 2000 Sep 20 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D381 BLF1046 OT467C 603516/04/pp11 BLF1046 BP317 TEKELec 467

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2001 Jan 25 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION


    Original     		PDF M3D390 BLF1047 BLF1047 OT541A OT541A) 603516/04/pp11