2SD560
Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is
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2SD560
2SD560
O-220AB
O-220AB)
nec 2sd560
2sd560 equivalent
NEC RELAY
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NEC RELAY
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct
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2SD2163
2SD2163
NEC RELAY
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NEC semiconductor
Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching.
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2SD2217
2SD2217
C11531E)
NEC semiconductor
transistor PT 4500
C11531E
NEC C11531E
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2SD2161
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2161 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2161 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and
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2SD2161
2SD2161
O-220
O-220)
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D1486
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2162 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2162 is a Darlington power transistor that can directly drive from the IC output. This transistor is ideal for motor drivers and
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2SD2162
2SD2162
O-220
O-220)
D1486
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2SB1430
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers
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2SB1430
2SB1430
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NEC RELAY
Abstract: 2sb146 NEC RELAY nec 5 2SB1465 C11531E NEC semiconductor
Text: PRELIMINARY DATA SHEET DARLINGTON POWER TRANSISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power transistor developed for low- PACKAGE DRAWING (UNIT: mm)
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2SB1465
2SB1465
C11531E)
NEC RELAY
2sb146
NEC RELAY nec 5
C11531E
NEC semiconductor
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D1486
Abstract: 2SC4342
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SC4342
2SC4342
O-126
D1486
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D1485
Abstract: 2SA1720
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SA1720
2SA1720
O-220
D1485
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA
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2SB1432
2SB1432
O-220
O-220)
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IC-3479
Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits
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PA1428A
PA1428A
PA1428AH
IC-3479
IC-8359
uPA1428
transistor array high speed
uPA1428AH
IEI-1213
PA1428
MF-1134
PA1428AH
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PA1476
Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1476
PA1476
PA1476H
transistor b 1202
uPA1476
uPA1476H nec
UPA1476H
NEC SIP
pa*476
IEI-1213
MEI-1202
MF-1134
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ic 8705
Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1436A
PA1436A
PA1436AH
ic 8705
IC-8705
nec 8705
IC-3482
PA1436AH
IEI-1209
UPA1436AH
pa1436
transistor array high speed
IEI-1213
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DARLINGTON MANUAL
Abstract: pa1436ah uPA1436H pa1436 iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1436
PA1436
PA1436H
DARLINGTON MANUAL
pa1436ah
uPA1436H
iei-1209
DARLINGTON TRANSISTOR ARRAY
MF-1134
npn darlington array
IEI-1213
MEI-1202
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IC-3523
Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and
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PA1458
PA1458
PA1458H
IC-3523
IC-6342
MEI-1202
MF-1134
IEI-1213
power transistor array
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uPA1456H
Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1456
PA1456
PA1456H
uPA1456H
IC-3521
IC-6340
IEI-1213
MEI-1202
MF-1134
DARLINGTON TRANSISTOR ARRAY
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IC-6634
Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and
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PA1478
PA1478
PA1478H
IC-6634
MEI-1202
MF-1134
IEI-1213
2di50
DARLINGTON TRANSISTOR ARRAY
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transistor 1000V 6A
Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQD300AA100
E76102
SQD300AA100
SQD300AA120
transistor 1000V 6A
diode 6A 1000v
transistor VCE 1000V
Ultrasonic moter application
transistor 1000V
high current darlington transistor
SQD300AA120
M6 transistor
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darlington transistor for audio power application
Abstract: 2SA1714 2SC4342 C11531E
Text: DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for
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2SA1714
2SA1714
O-126
2SC4342
C11531E)
darlington transistor for audio power application
2SC4342
C11531E
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2SC4351
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for
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2SC4351
2SC4351
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQD400AA100 SQD400AA10 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from Semiconductor elements for
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SQD400AA100
SQD400AA10
-400A
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motorola transistor ignition
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR
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BU323AP
340D-01
motorola transistor ignition
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iei-1209
Abstract: uPA1438 transistor CD 910 IC351 IC-3517 IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET SILICON TRANSISTOR ARRAY uPA1438 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The ¿¿PA1438 is NPN silicon epitaxial D arlington (in millimeters) Power Transistor A rray that built in Surge Absorber and
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PA1438
uPA1438
tPA1438H
IEI-1209)
iei-1209
transistor CD 910
IC351
IC-3517
IEI-1213
MEI-1202
MF-1134
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated
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SQQ300BA60
200ns)
hrEfe750
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