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    POWER TRANSISTOR BJT 100 A Search Results

    POWER TRANSISTOR BJT 100 A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR BJT 100 A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PWM Controller For BJT

    Abstract: power transistor bjt 1000 a transistor marking CS
    Text: Preliminary Datasheet CURRENT MODE PWM CONTROLLER FOR BJT General Description Features The AP3720 is a low startup current, current mode PWM controller with green-mode operation. The PWM switching frequency at normal operation is 65k, but when the output power drops below the


    Original     		AP3720 20kHz AP3720 PWM Controller For BJT power transistor bjt 1000 a transistor marking CS PDF

    NCP1450ASN50T1G

    Abstract: NCP1450ASN50T1 5 pin IC marking DAZ tsop 173a
    Text: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


    Original     		NCP1450A NCP1450ASN50T1G NCP1450ASN50T1 5 pin IC marking DAZ tsop 173a PDF

    NCP1450ASN50T1

    Abstract: 27T1 bjt ce amplifier JESD22-A114 JESD22-A115 JESD78 NCP1450A NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1
    Text: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step-up DC-DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


    Original     		NCP1450A NCP1450A NCP1450A/D NCP1450ASN50T1 27T1 bjt ce amplifier JESD22-A114 JESD22-A115 JESD78 NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1 PDF

    5 pin IC marking DAZ

    Abstract: NCP1450ASN50T1 bjt 100 A114 A115 JESD22 NCP1450A NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1
    Text: NCP1450A PWM Step-up DC-DC Controller The NCP1450A series are PWM step–up DC–DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


    Original     		NCP1450A NCP1450A r14525 NCP1450A/D 5 pin IC marking DAZ NCP1450ASN50T1 bjt 100 A114 A115 JESD22 NCP1450ASN19T1 NCP1450ASN27T1 NCP1450ASN30T1 PDF

    NCP1450

    Abstract: NCP1450ASN50T1G NCP1450ASN50T1 NCP1450A NCP1450ASN19T1 NCP1450ASN19T1G NCP1450ASN27T1 NCP1450ASN27T1G NCP1450ASN30T1 NCP1450ASN30T1G
    Text: NCP1450A PWM Step−up DC−DC Controller The NCP1450A series are PWM step−up DC−DC switching controller that are specially designed for powering portable equipment from one or two cells battery packs. The NCP1450A series have a driver pin, EXT pin, for connecting to an external transistor. Large


    Original     		NCP1450A NCP1450A NCP1450A/D NCP1450 NCP1450ASN50T1G NCP1450ASN50T1 NCP1450ASN19T1 NCP1450ASN19T1G NCP1450ASN27T1 NCP1450ASN27T1G NCP1450ASN30T1 NCP1450ASN30T1G PDF

    Application Note 41

    Abstract: phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt
    Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 41 Faster Switching from Standard Couplers Optocouplers offer tremendous advantages in minimizing EMI and noise susceptibility. It is not an exaggeration to say that a healthy sprinkling of opto-isolation has often meant


    Original     		16-Mar-12 Application Note 41 phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt PDF

    AN-1084

    Abstract: Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841
    Text: Application Note AN-1084 Power MOSFET Basics by Vrej Barkhordarian, International Rectifier Table of Contents Page Breakdown Voltage .5


    Original     		AN-1084 AN-1084 Power MOSFET Basics HEXFET Power MOSFET designer manual HEXFET Power MOSFET Designers Manual BJT with i-v characteristics MOSFET designer manual N-Channel jfet 100V depletion N-Channel jfet 500V depletion n channel depletion MOSFET AN10841 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM201MN KSD-T6T002-001 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM202MN KSD-T6T001-002 PDF

    transistor bjt 331

    Abstract: 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603
    Text: AN10910 Protecting charger interfaces and typical battery charging topologies with external bypass transistors Rev. 01 — 28 April 2010 Application note Document information Info Content Keywords BISS, Battery charger, Li-Ion battery Li-polymer battery , overvoltage


    Original     		AN10910 AN10910 transistor bjt 331 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP Drive Base BJT AN10753 prtr5v0 DOUBLE FET PBSS304PX PCF50603 PDF

    power BJT

    Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
    Text: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT


    Original     		iW1810 power BJT bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant PDF

    IGBT SCHEMATIC

    Abstract: motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541
    Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1541/D AN1541 Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and Scott Deuty Motorola Inc. INTRODUCTION As power conversion relies more on switched applications,


    Original     		AN1541/D AN1541 AN1541/D* IGBT SCHEMATIC motorola scr cross reference MGW20N60D power BJT PNP BJT npn motorola mosfet base induction heat circuit BJT characteristics GATE ASSISTED TURN-OFF THYRISTORS BJT isolated Base Drive circuit AN1541 PDF

    12V 10A BJT

    Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		SUM202MN KSD-T6T001-001 12V 10A BJT Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v PDF

    BJT with i-v characteristics

    Abstract: AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249
    Text: MT-096 TUTORIAL RFI Rectification Concepts INPUT-STAGE RFI RECTIFICATION SENSITIVITY A well-known but poorly understood phenomenon in analog integrated circuits is RFI rectification, specifically as it occurs in op amps and in-amps. While amplifying very small


    Original     		MT-096 BJT with i-v characteristics AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249 PDF

    BJT 2222

    Abstract: npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 SDCL bjt 2n2222 driver circuit transistor BJT 2N2222 W6 13A Diode IRLL014N SMALL low frequency transformer
    Text: AN45 D E S I G N G U ID E Si3210/15/16 DC-DC CONVERTER FOR THE 1. Introduction The ProSLIC from Silicon Laboratories integrates a complete analog telephone interface into one low-voltage CMOS device and offers extensive software programmability to meet many global telephony


    Original     		Si3210/15/16 Si321x BJT 2222 npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 SDCL bjt 2n2222 driver circuit transistor BJT 2N2222 W6 13A Diode IRLL014N SMALL low frequency transformer PDF

    Untitled

    Abstract: No abstract text available
    Text: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and


    Original     		iW1816 64kHz 230VAC PDF

    30 micro farad capacitor 6000 volt

    Abstract: HBT transistor j1 05075 ECG014 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660
    Text: PRELIMINARY DATA SHEET ECG014 BROADBAND HIGH OIP3 AMPLIFIER 50 - 2000 MHz Features Applications n n n n n n n 50 to 2000 MHz 42 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability


    Original     		ECG014 OT-89 ECG014 OT-89 SS-000122-000 30 micro farad capacitor 6000 volt HBT transistor j1 05075 LL1608-F33NK MCH185A180JK MCH185A560JK 7953 scr 50kA ic 76660 PDF

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier PDF

    BJT with i-v characteristics

    Abstract: SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR ECG015 LL1608-F15NK MCH185A180JK MCH185A560JK
    Text: PRELIMINARY DATA SHEET ECG015 BROADBAND HIGH OIP3 AMPLIFIER 1800 - 2500 MHz Features Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability Multi-carrier Systems n High Linearity Amplifiers n Cellular, PCS, WLL Package Available


    Original     		ECG015 OT-89 ECG015 OT-89 SS-000145-000 BJT with i-v characteristics SSG TRANSISTOR 3362 motorola InP HBT transistor motorola 3362 SSG 23 TRANSISTOR LL1608-F15NK MCH185A180JK MCH185A560JK PDF

    pin details of pwm ic 2003

    Abstract: power BJT ICs sl431sf PWM Controller For BJT BJT Gate Drive circuit OPTO ISOLATOR RYC9114-1T Three-terminal Off-line PWM Switch
    Text: R Power Management ICs www.tycopowercomponents.com RYC91xx Document: SCD 25391 Status: Preliminary Rev. A April 16, 2003 PWM Power Supply Controller GENERAL DESCRIPTION FEATURES The RYC91XX is a digital PWM controller designed for small power, universal line voltage applications.


    Original     		RYC91xx RYC91XX pin details of pwm ic 2003 power BJT ICs sl431sf PWM Controller For BJT BJT Gate Drive circuit OPTO ISOLATOR RYC9114-1T Three-terminal Off-line PWM Switch PDF

    FET pair n-channel p-channel

    Abstract: P-Channel Depletion-Mode MOSFET
    Text: An introduction to Depletion-mode MOSFETs By Linden Harrison Since the mid-nineteen seventies the “enhancement-mode” MOSFET has been the subject of almost continuous global research, development, and refinement by both the semiconductor industry and academia. As a result it has become the predominant


    Original     		PDF

    siliconix vmp4

    Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
    Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc


    Original     		99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet PDF

    all mosfet equivalent book

    Abstract: free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion
    Text: July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs. 2 2. FETs . 3


    Original     		AN9010 all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages AN9010 vmosfet BJT isolated Base Drive circuit Drive Base BJT FQP10N20 n Power mosfet depletion PDF

    Untitled

    Abstract: No abstract text available
    Text: AN10909 Low VCEsat transistors in medium power load switch applications Rev. 2 — 13 March 2013 Application note Document information Info Content Keywords NXP low VCEsat transistors, performance in load switch applications Abstract Different low VCEsat transistors in load switch applications. Evaluation of


    Original     		AN10909 PDF