transistor 2sc4237
Abstract: power TRANSISTOR 800V 5A transistor 800V 1A 2SC4237 TV power transistor datasheet transistor Ic 1A datasheet NPN npn switching transistor Ic 5A transistor transistor Ic 1A NPN transistor 03 NPN
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4237 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·Fast Switching speed APPLICATIONS ·Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
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2SC4237
transistor 2sc4237
power TRANSISTOR 800V 5A
transistor 800V 1A
2SC4237
TV power transistor datasheet
transistor Ic 1A datasheet NPN
npn switching transistor Ic 5A
transistor
transistor Ic 1A NPN
transistor 03 NPN
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BU4508DF
Abstract: power TRANSISTOR 800V 5A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4508DF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU4508DF
100mA;
600mA;
BU4508DF
power TRANSISTOR 800V 5A
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2SC4119
Abstract: No abstract text available
Text: Ordering number:EN2548B NPN Triple Diffused Planar Silicon Darlington Transistor 2SC4119 800V/15A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage , high-power switching. unit:mm 2048A [2SC4119] Features · High speed adoption of MBIT process .
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EN2548B
2SC4119
00V/15A
2SC4119]
2SC4119
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2SC4119
Abstract: DARLINGTON 5A 1500V
Text: Ordering number:EN2548B NPN Triple Diffused Planar Silicon Darlington Transistor 2SC4119 800V/15A Driver Applications Applications Package Dimensions • Induction cookers. · High-voltage , high-power switching. unit:mm 2048A [2SC4119] Features · High speed adoption of MBIT process .
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EN2548B
2SC4119
00V/15A
2SC4119]
2SC4119
DARLINGTON 5A 1500V
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Diode B2x
Abstract: E80276 QM150DY-3H
Text: MITSUBISHI TRANSISTOR MODULES QM150DY-3H HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-3H • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1400V hFE DC current gain. 100
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QM150DY-3H
E80276
E80271
Diode B2x
E80276
QM150DY-3H
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NTE386
Abstract: npn 10a 800v
Text: NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high– speed power switching in inductive circuit where fall time is critical. This device is particularly suited
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NTE386
NTE386
300ms,
npn 10a 800v
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transistor Electronic ballast
Abstract: 15A POWER TRANSISTOR FOR SMPS MJE13003 Electronic ballast 11W MJE13005 mje13005 ballast mje13003 ballast MJE13007 electronic ballast MJE13005 electronic ballast with MJE13007
Text: “Quality First” First” First & Best KEC Power Transistor MJE Series Device APP MKTMKT-G “Quality First” First” First & Best Power Transistor (MJE Series) ▣ Application High Voltage Switch Mode ▣ Feature High Speed Switching High Voltage Capability
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O-126
O-220IS
O-220AB
O-126
O-220IS
O-220AB
KTC5027/F
STBV32
FJN13003
BUJ100
transistor Electronic ballast
15A POWER TRANSISTOR FOR SMPS
MJE13003
Electronic ballast 11W
MJE13005
mje13005 ballast
mje13003 ballast
MJE13007
electronic ballast MJE13005
electronic ballast with MJE13007
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NTE283
Abstract: npn 10a 800v
Text: NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include
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NTE283
NTE283
npn 10a 800v
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infineon power cycling igbt3
Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Text: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,
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D-59581
200V-Trench-
1998-Kyoto
2003N
00V-IGBT³
2004-N
infineon power cycling igbt3
IGBT4
snap-off diode
infineon igbt3 1200v
infineon power cycling curves
infineon igbt4 1200v
Measurement of stray inductance for IGBT
igbt simulation
IGBT2
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Untitled
Abstract: No abstract text available
Text: , Una. J x TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2N6751 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(sus)= 400(Min.) • High Switching Speed
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2N6751
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2SC3927
Abstract: DSA0016508
Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC
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2SC3927
MT-100
100max
550min
Pulse15)
105typ
2SC3927
DSA0016508
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2SC3927
Abstract: No abstract text available
Text: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor 100max µA V IEBO VEB=7V 100max µA V V(BR)CEO IC=10mA 550min V VCE=4V, IC=5A 10 to 28 10(Pulse15) A hFE IB 5 A VCE(sat) PC 120(Tc=25°C) W VBE(sat) Tj 150 °C fT –55 to +150
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2SC3927
100max
550min
Pulse15)
105typ
MT-100
2SC3927
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BUX80
Abstract: 928 transistor NPN Transistor 50A 400V
Text: BUX80 Power Transistor High Voltage Power Transistors are designed for use in high-voltage, high-speed, power switching in inductive circuit, motor control, solenoid and relay drivers. Features: • Collector-Emitter Sustaining VoltageVCEO sus = 400V (Minimum).
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BUX80
BUX80
928 transistor
NPN Transistor 50A 400V
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c120 transistor
Abstract: BU508A ts 4141 TRANSISTOR transistor BU508A Data- sheet transistor k 1119 transistor 800V 1A transistor data cd BU508A to3p TRANSISTOR BU508A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV Horizontal Output Application No Damper Diode ABSOLUTE MAXIMUM RATINGS (Ta=25ºC Unless Specified Otherwise )
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BU508A
C-120
BU508A
Rev260405D
c120 transistor
ts 4141 TRANSISTOR
transistor BU508A Data- sheet
transistor k 1119
transistor 800V 1A
transistor data cd
BU508A to3p
TRANSISTOR BU508A
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Untitled
Abstract: No abstract text available
Text: bOE D • A1331Ô7 ODGDSQfl QMS ■ SMLB SEMELAB PLC SEMELAB 'T S V lS BU L48B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR M E C H A N IC A L D A TA D im ension s in m m • SEMEFAB DESIGNED A N D DIFFUSED • HIGH VOLTAGE VCE>0= 800V
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A1331Ã
LE174JB
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5011s
Abstract: 2SC3846
Text: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 QOlbbBM S Q F f l l T '3 3-/3 January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O LU T E M A X IM U M R ATIN G S Parameter Storage Temperature Range
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374T7b2
2SC3846
2SC3846
D01bb37
5011s
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2SC3843
Abstract: 2SC3846 2SC3842 5011s 2SC3844 2SC3845 2SC3847 2SC3947 2SC3948 2SC3949
Text: FU JI TS U M I C R O E L E C T R O N I C S 31E D E3 374=57b2 Q O l b b B M S Q F f l I T~23 cP January 1990 Edition 1.1 FUJITSU P R O D U C T P R O F IL E - 2SC3846 Silicon High Speed Power Transistor 2SC3846 800V, 6A A B S O L U T E MAXIMUM R A T IN G S Parameter
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374T7b2
2SC3846
2SC3846
2SC3842
2SC3843
2SC3844
2SC3845
2SC3847
2SC3947
5011s
2SC3948
2SC3949
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Untitled
Abstract: No abstract text available
Text: « RURP1570, RURP1580, RURP1590, RURP15100 ¡11995 1 5A, 700V - 1000V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR< 100ns JEDEC TQ-220AC ANODE • +175°C Rated Junction Temperature CATHODE • Reverse Voltage Up to 1000V
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RURP1570,
RURP1580,
RURP1590,
RURP15100
100ns)
TQ-220AC
RURP15100
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2SC2792
Abstract: No abstract text available
Text: TO SH IBA 2SC2792 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC2792 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm 15.9MAX. . HIGH SPEED DC-DC CONVERTER APPLICATIONS. • • ¿3.2 ±0.2 Excellent Switching Times (l0 = O.5A
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2SC2792
2SC2792
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TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
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1N5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,
1N5767
1N5802
1N5802,
1N5804,
TRANSISTOR J 5804 NPN
TRANSISTOR J 5804
TRANSISTOR J 5803
j 5804 transistor
1N6621
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KSD5001
Abstract: KSD5002 tv samsung samsung tv T 33 16AF
Text: SAMSUNG SEMICO NDU CTO R 1ME D INC | Q 0 0 ?b 3 fl 7 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5001 T-33-1 3 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN HIGH Collector-fiaM Voltage' Vcao=1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25° C)
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KSD5001
71b4142
T-33-I
-55-M150
KSD5002
KSD5001
KSD5002
tv samsung
samsung tv
T 33
16AF
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2SC2792
Abstract: No abstract text available
Text: TOSHIBA 2SC2792 2SC2792 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE INDUSTRIAL APPLICATIONS SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. • Excellent Switching Times l0 = O.5A tr=1.0/^s Max. tf^l.O/^s Max.
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2SC2792
961001EAA2'
2SC2792
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transistor 800V 1A
Abstract: No abstract text available
Text: bOE D fll331fl? 000051b 111 • S N L B SEMELAB PLC SEMELAB 'T J 'S - v l? BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensionsin mm Designed for use in electronic ballast lighting applications
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fll331fl?
000051b
BUL54B
T0220
300/is
transistor 800V 1A
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TS 4142
Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142
Text: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage
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0075T4
T-33-
KSD288
TS 4142
LC04A
KSD73
100V transistor npn 5a
ksa814
NPN Transistor TO220 VCEO 80V 100V
SAA 1020
NPN/TS 4142
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