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    POWER TRANSISTOR 1 WATT 2.4 GHZ Search Results

    POWER TRANSISTOR 1 WATT 2.4 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER TRANSISTOR 1 WATT 2.4 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HMC455LP3

    Abstract: No abstract text available
    Text: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB


    Original     		PDF HMC455LP3 HMC455LP3

    MICROWAVE TRANSISTOR

    Abstract: No abstract text available
    Text: HMC455LP3 v00.1102 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB


    Original     		PDF HMC455LP3 HMC455LP3 MICROWAVE TRANSISTOR

    RMPA2455

    Abstract: f245 VM122 500 watt RF amplifier GHz 2.45 Ghz power amplifier 30 db
    Text: RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Features General Description • ■ ■ ■ ■ ■ ■ ■ ■ The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm


    Original     		PDF RMPA2455 RMPA2455 f245 VM122 500 watt RF amplifier GHz 2.45 Ghz power amplifier 30 db

    Untitled

    Abstract: No abstract text available
    Text: HMC455LP3 / 455LP3E v02.0605 AMPLIFIERS - SMT 8 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE


    Original     		PDF HMC455LP3 455LP3E HMC455LP3 HMC455LP3E

    Untitled

    Abstract: No abstract text available
    Text: HMC455LP3 / 455LP3E v02.0605 AMPLIFIERS - SMT 8 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE


    Original     		PDF HMC455LP3 455LP3E HMC455LP3 HMC455LP3E

    Untitled

    Abstract: No abstract text available
    Text: HMC455LP3 / 455LP3E v02.0605 AMPLIFIERS - SMT 8 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE


    Original     		PDF HMC455LP3 455LP3E HMC455LP3 HMC455LP3E

    455LP3E

    Abstract: HMC455LP3 150 watt amplifier circuits
    Text: HMC455LP3 / 455LP3E v02.0605 AMPLIFIERS - SMT 5 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE


    Original     		PDF HMC455LP3 455LP3E HMC455LP3 HMC455LP3E 455LP3E 150 watt amplifier circuits

    QB-925

    Abstract: No abstract text available
    Text: Model # QB-925 8 Watt Hybrid Driver Amplifier 2.0 – 6.0 GHz, 4 Watt Hybrid Driver Amplifier • High Saturated Output Power to 10 Watts • Rugged GaN Technology • Balanced Output Configuration for Optimum Return Loss • 2 Stage Amplifier with Independent Gate & Drain Bias Controls


    Original     		PDF QB-925 QB-925

    150 watt amplifier circuits

    Abstract: No abstract text available
    Text: HMC455LP3 v01.0604 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE


    Original     		PDF HMC455LP3 HMC455LP3 150 watt amplifier circuits

    RMPA2455

    Abstract: VM122
    Text: RMPA2455 2.4–2.5 GHz 1 Watt InGaP HBT Linear Power Amplifier Features General Description • ■ ■ ■ ■ ■ ■ The RMPA2455 power amplifier is designed for high performance WLAN access point applications in the 2.4–2.5 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm


    Original     		PDF RMPA2455 RMPA2455 VM122

    BD135

    Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
    Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics


    Original     		PDF MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727

    461LP3E

    Abstract: HMC455LP3 HMC461LP3 pin configuration of IC 1619 2.1 amplifier circuit diagram
    Text: HMC461LP3 / 461LP3E v02.0705 AMPLIFIERS - SMT 5 InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain • GSM, GPRS & EDGE


    Original     		PDF HMC461LP3 461LP3E HMC461LP3 HMC461LP3E HMC455LP3 461LP3E pin configuration of IC 1619 2.1 amplifier circuit diagram

    1417 transistor

    Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
    Text: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier


    Original     		PDF 417-12A 1417 transistor transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic

    HMC455LP3

    Abstract: HMC461LP3 hmc - 020
    Text: HMC461LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain


    Original     		PDF HMC461LP3 HMC461LP3 HMC455LP3 HMC455LP3 hmc - 020

    Untitled

    Abstract: No abstract text available
    Text: HMC461LP3 v00.1202 MICROWAVE CORPORATION InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Typical Applications Features A high linearity 1 watt amplifier for: +45 dBm Output IP3 Balanced Configuration • Multi-Carrier Systems 12 dB Gain


    Original     		PDF HMC461LP3 HMC461LP3 HMC455LP3

    2100 wcdma repeater circuit

    Abstract: HMC457 HMC457QS16G GSM 3g repeater circuit RF TRANSISTOR 1 WATT HMC457QS16GE
    Text: HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G 2100 wcdma repeater circuit HMC457 GSM 3g repeater circuit RF TRANSISTOR 1 WATT

    Untitled

    Abstract: No abstract text available
    Text: HMC457QS16G / 457QS16GE v03.0907 LINEAR & POWER AMPLIFIERS - SMT 11 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range ampliier: Output IP3: +46 dBm


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G

    GSM 3g repeater circuit

    Abstract: HMC 007
    Text: HMC457QS16G / 457QS16GE v01.0705 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Designer’s Kit Available Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier:


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G GSM 3g repeater circuit HMC 007

    GSM 3g repeater circuit

    Abstract: HMC457QS16G 2100 WCDMA repeater circuit
    Text: HMC457QS16G / 457QS16GE v02.0107 AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G GSM 3g repeater circuit 2100 WCDMA repeater circuit

    HMC457QS16G

    Abstract: GSM repeater circuit using transistor 2100 mhz rf power amplifier circuit diagram 500 watt power circuit diagram GSM 3g repeater circuit 3g amplifier 2100 WCDMA repeater circuit HMC457
    Text: HMC457QS16G / 457QS16GE v03.0907 6 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G GSM repeater circuit using transistor 2100 mhz rf power amplifier circuit diagram 500 watt power circuit diagram GSM 3g repeater circuit 3g amplifier 2100 WCDMA repeater circuit HMC457

    GSM 3g repeater circuit

    Abstract: HMC457 HMC457QS16G
    Text: HMC457QS16G / 457QS16GE v03.0907 LINREAR & POWER AMPLIFIERS - SMT 5 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC-DK002 HMC457QS16G GSM 3g repeater circuit HMC457

    GSM WCDMA repeater circuit

    Abstract: HMC457QS16G 2100 mhz rf power amplifier circuit diagram GSM 3g repeater circuit 301 miniature smt transistor
    Text: HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz AMPLIFIERS - SMT 8 Features Typical Applications The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout


    Original     		PDF HMC457QS16G HMC457QS16G QSOP16G GSM WCDMA repeater circuit 2100 mhz rf power amplifier circuit diagram GSM 3g repeater circuit 301 miniature smt transistor

    Untitled

    Abstract: No abstract text available
    Text: HMC457QS16G / 457QS16GE v01.0705 AMPLIFIERS - SMT 8 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Typical Applications Features The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA


    Original     		PDF HMC457QS16G 457QS16GE HMC457QS16GE QSOP16G HMC457QS16G

    Untitled

    Abstract: No abstract text available
    Text: HMC457QS16G v00.0904 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz Features Typical Applications AMPLIFIERS - SMT 8 The HMC457QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +46 dBm • CDMA & W-CDMA 48% PAE @ +32 dBm Pout


    Original     		PDF HMC457QS16G QSOP16G HMC457QS16G