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    POWER SUPPLY AX 322 Search Results

    POWER SUPPLY AX 322 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    POWER SUPPLY AX 322 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2M X 32-Bit Dynamic RAM Module HYM 322160S/GS-60/-70 Advanced Information 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time


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    32-Bit 322160S/GS-60/-70 16-Bit) 023Sb05 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M X 9-Bit Dynamic RAM Module HYM 32200S/L-60/-70/-80 Advanced Inform ation • • • • • • • • • • • • • • 1 048 576 w ords by 9-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e -60 version


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    32200S/L-60/-70/-80 PDF

    514400AJ

    Abstract: HYM32200S 32200S-70
    Text: SIEMENS 1M X 9-Bit Dynamic RAM Module HYM 32200S/L-60/-70/-80 Advanced Information • • • • • • • • • • • • • • 1 048 576 words by 9-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time -60 version 70 ns access time


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    32200S/L-60/-70/-80 32200S/L-60/-70/-80 514400AJ HYM32200S 32200S-70 PDF

    Untitled

    Abstract: No abstract text available
    Text: HITACHI PF0147 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-322D Z 5th. Edition June, 1996 Application For G SM class4 890 to 915M H z. Features • 2stage am plifier


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    PF0147 ADE-208-322D PDF

    Untitled

    Abstract: No abstract text available
    Text: M M O T O R O L A M ilitary 5 4 LS3 6 5 A Hex Buffer, Common Enable, 3-State ELECTRICALLY TESTED PER: MIL-M-38510/32201 This device is a high-speed hex b u ffe r w ith 3-state o utp uts. It is o rg a ­ nized as a sin g le 6 -bit or 2 -bit/4-bit, w ith in ve rtin g o r n o n -in v e rtin g data


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    MIL-M-38510/32201 PDF

    LBIT 204

    Abstract: uPD75X
    Text: bME7S2S LMT INECE NEC NEC Electronics Inc. pPD78322 Family ffPD78320/322/P322 16/8-Bit, K-Series Microcomputers With A/D Converter, Real-Time Output Ports July 1993 Description □ Minimum in stru ctio n time: 250 ns a t 16 MHz The ¿/PD78320, fjPD78322, and ¿¿PD78P322 are mem­


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    pPD78322 ffPD78320/322/P322) 16/8-Bit, /PD78320, fjPD78322, PD78P322 16/8-bit 16-bit F-80-3B9-1) b427525 LBIT 204 uPD75X PDF

    38510 32204

    Abstract: No abstract text available
    Text: g MOTOROLA Hex In v erte r, 4-B it and 2-B it, 3 -S ta te ELECTRICALLY TESTED PER: M IL-M - 38510/32204 T his device is a hig h -sp eed h ex b u ffer w ith 3-state outputs. It is o rg a ­ nized as a sin g le 6-b it o r 2 -b it/4 -b it, w ith in v e rtin g o r n o n -in v e rtin g data


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    PDF

    IR2117 APPLICATION NOTE

    Abstract: IR2117 . igbt driver IR2117
    Text: Data Sheet No. PD60146 Rev M IR2117/IR2118 S SINGLE CHANNEL DRIVER Features • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


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    PD60146 IR2117/IR2118 IR2117) IR2118) 5M-1994. MS-012AA. IR2117 APPLICATION NOTE IR2117 . igbt driver IR2117 PDF

    IR2127

    Abstract: power supply ax 322
    Text: Data Sheet No. PD60143J IR2127/IR2128 IR21271/IR21281 CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 12 to 20V IR2127/


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    PD60143J IR2127/IR2128 IR21271/IR21281 IR2127/ IR2128) IR21271/IR21281) IR2127/IR21271) IR2128/IR21281) IR2127/IR2128/IR21271/IR21281 power400 IR2127 power supply ax 322 PDF

    322F-M

    Abstract: No abstract text available
    Text: SN74AHCT1G14 SINGLE SCHMITT-TRIGGER INVERTER GATE S C LS 322F-M A R C H 1996-R E V IS ED FEBRUARY 1998 DBV PACKAGE TOP VIEW Inputs Are TTL-Voltage Compatible EP/C (Enhanced-Performance Implanted CMOS) Process High Latch-Up Immunity Exceeds 250 mA Per JESD17


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    SN74AHCT1G14 322F-M 1996-R JESD17 PDF

    ic 4532

    Abstract: PS4530 PS4531 PS4532 74H4351
    Text: PS4530/PS4531/PS4532


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    PS4530/PS4531/PS4532 PS4530CWP PS4530CAP PS4530EWP PS4530EAP PS4531CWP PS4531CAP PS4531EWP PS4531EAP PS4532EWP ic 4532 PS4530 PS4531 PS4532 74H4351 PDF

    PS4530

    Abstract: PS4531 PS4532 coma
    Text: PS4530/PS4531/PS4532


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    PS4530/PS4531/PS4532 PS4530CWP PS4530CAP PS4530EWP PS4530EAP PS4531CWP PS4531CAP PS4531EWP PS4531EAP PS4532EWP PS4530 PS4531 PS4532 coma PDF

    Untitled

    Abstract: No abstract text available
    Text: PS4530/PS4531/PS4532


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    PS4530/PS4531/PS4532 MAX4530/MAX4531/MAX4532 PS4530CWP PS4530CAP PS4530EWP PS4530EAP PS4531CWP PS4531CAP PS4531EWP PS4531EAP PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32200R8 Product Preview 2M x 32 Bit Dynamic Random Access Memory Card The M C M 32200R 8 is a 5 V D RAM M em ory C ard organized as tw o banks of 1,048,576 x 32 bits. T h e card is a JE D E C -stan d a rd Type 1, 88-pin D RAM card, co n ­


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    MCM32200R8 32200R 88-pin 5L4400A MCM32200R860 MCM32200R870 MCM32200R8 PDF

    IR2126

    Abstract: 104X111 1R2125 IR2121 MP150
    Text: International i- w j^ i n c u u 1 u Data Sheet No. PD-6.018D 1 0 ^ 4 ir v z . i r i O H £ * i CURRENT LIMITING LOW SIDE DRIVER Features • r lr i\ /o c i in n h / r a n n o fr n m Product Summary 1 9 tn 1 ft\/ — v,w ',Mr r ,7 ,w ,» w ■— — ■w■ U n d e rvo lta g e lo cko u t


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    IR2121 CA80245 RH89BB, IR2126 104X111 1R2125 MP150 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-0225; Rev 3; 9/97 IT K ATION EVALU BLE AVAILA 5 V /3 .3 V /3 V or Adjust a ble , H igh-Effic ie nc y, Low I Q , St e p-Dow n DC-DC Cont rolle rs _Applic a t ions 5V-to-3.3V Green PC Applications High-Efficiency Step-Down Regulation


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    MAX649) MAX651) MAX652) 300kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: f j j P E R IC O M PI49FCT807T PI49FCT2807T Fast CMOS Clock Driver Product Features: • G uaranteed low skew: 0.25 ns • Low input capacitance • M inim um duty cycle distortion • 1:10 fanout • High speed: 3.5 ns propagation delay • T T L input and CM O S output com patible


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    PI49FCT807T PI49FCT2807T PI49FC 2807T PS7008A PDF

    HA1322

    Abstract: hitachi ha1322 DP10T Hitachi Scans-001 C104 C103 C105 C106 C107 C109
    Text: HAI 322 AUDIO POWER AMPLIFIER FE A TU R E S High Output Power: 5.5W typ. V c c = 13.2V, R L = 4Ì2, T.H .D .= 10% High Voltage Gain: 55dB typ. No Shock Noise at Power Switch ON High Hum Rejection: 50dB typ. (f = 500Hz, Rg = 0Ì2) High Input Impedance: 36k£2 typ.


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    500Hz, 36ki2 DP-10T) HA1322 hitachi ha1322 DP10T Hitachi Scans-001 C104 C103 C105 C106 C107 C109 PDF

    S32M8

    Abstract: No abstract text available
    Text: T Dense-Pac Microsystems, Inc. ^ DPS32M8A H IG H SPEED 32K X 8 C M O S SRAM M O N O LIT H IC ADVANCED INFORMATION D ES C R IP T IO N : The D PS32M 8A is a 32K X 8 C M O S Static Random A c c e ss M em ory SRA M . The m em ory utilizes asynchronous circuitry and may be maintained in any


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    DPS32M8A PS32M 30A00M0 S32M8 PDF

    THM322500AS-70

    Abstract: tc514256
    Text: 262,144 W O R D S X 32 BIT D Y N A M IC R A M M O D U L E DESCRIPTION The THM322500BS/BSG/AS/ASG is a 524,288 words by 32 bits dynamic RAM module which assembled 8 pcs of TC514256AJ/BJ on the printed circuit board. These modules can be as well used as 524,288 words by 1G bits dynamic RAM module, by means of connecting DQO and DQ16, DQ1 and


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    THM322500BS/BSG/AS/ASG TC514256AJ/BJ -THM322500ASG-70, B-121 THM322500BS-60, THM322500AS-70, THM322500BSG-60, THM322500ASG-70, B-122 THM322500AS-70 tc514256 PDF

    Untitled

    Abstract: No abstract text available
    Text: PI74FCT322501T PI74FCT322Q501T


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    PI74FCT322501T PI74FCT322Q501T 36-Bit 100-pin PI74FCT322Q501T PS7085B PDF

    327HU

    Abstract: No abstract text available
    Text: HY51 V S 18160HG(HGL) 1Mx16, 3.3V, 1K Ref, FP DESCRIPTION 16M-bit DRAM Th e HY51 V (S )1 8 1 6 0 H G /H G L is the new generation dynam ic RA M organized 1 ,0 4 8 ,5 7 6 words x 16bit. H Y 5 1 V (S )1 8 1 6 0 H G /H G L has realized higher density, higher perform ance and various functions by utiliz­


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    18160HG 1Mx16, 16bit. 42pin 327HU PDF

    SL379

    Abstract: TRANSISTOR tip 127 HP32 Ds2448 DS3875 SL7953
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS ADVANCE INFORMATION DS3875 - 1.2 SL379 SUBSCRIBER LINE INTERFACE CIRCUIT VREG BGND VBAT QBAT 2 9 1 8 BX RINGX AX(TIPX) DB 31 30 BGND 1 32 VREG 2 HPB QBAT 9 25 HPA CHS 10


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    DS3875 SL379 SL379 SL7953 DS2448-1 TRANSISTOR tip 127 HP32 Ds2448 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1075; Rev 0; 6/96 NUAL KIT MA ATION SHEET A EVALU T A D WS FOLLO 5 V /3 .3 V or Adjust a ble , 1 0 0 % Dut y-Cyc le , H igh-Effic ie nc y, St e p-Dow n DC-DC Cont rolle rs _Applic a t ions PCMCIA Power Supplies Personal Digital Assistants


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    101mm 004in. 1-0041A PDF