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    POWER SOT-23 MARKING CG Search Results

    POWER SOT-23 MARKING CG Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR1HF50B Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 5.0 V, 150 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR1HF33B Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 3.3 V, 150 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EE18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-553 (ESV) Visit Toshiba Electronic Devices & Storage Corporation

    POWER SOT-23 MARKING CG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF 226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA

    MMIC SOT 363 marking CODE 77

    Abstract: SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 MMIC SOT 363 marking CODE 82 SMD Transistor in sot363 MMIC SOT 363 marking CODE 68 SOT363-6 MARKING 67 SOT-363 y5s 0022 MMIC SOT 363 marking CODE 86
    Text: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 W • No bias coil needed • Single positive supply voltage • Low noise figure and high gain


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    PDF P-SOT363-6-1 Q62702 EHT08796 GPS05604 MMIC SOT 363 marking CODE 77 SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 MMIC SOT 363 marking CODE 82 SMD Transistor in sot363 MMIC SOT 363 marking CODE 68 SOT363-6 MARKING 67 SOT-363 y5s 0022 MMIC SOT 363 marking CODE 86

    MMIC SOT 363 marking CODE 77

    Abstract: SMD Transistor Marking Code 71 SOT 23 SOT363-6 TRANSISTOR SMD CODE 6.8 MMIC SOT 363 marking CODE 82 y5s 0.022 SOT 363 marking code 62 low noise 59w smd smd marking code vd VD F1 SMD
    Text: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 Ω • No bias coil needed • Single positive supply voltage • Low noise figure and high gain


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    PDF P-SOT363-6-1 Q62702 EHT08796 GPS05604 MMIC SOT 363 marking CODE 77 SMD Transistor Marking Code 71 SOT 23 SOT363-6 TRANSISTOR SMD CODE 6.8 MMIC SOT 363 marking CODE 82 y5s 0.022 SOT 363 marking code 62 low noise 59w smd smd marking code vd VD F1 SMD

    MMIC SOT 363 marking CODE 77

    Abstract: MARKING CODE SMD IC 307 SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 SOT 363 marking code 62 low noise MMIC SOT 363 marking CODE 06 MMIC SOT 563 marking CODE 22 MMIC SOT 363 marking CODE 82 306 marking code transistor smd transistor code 314
    Text: GaAs MMIC CGY 59W Data Sheet • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7 V to 6 V systems • Biased monolithic microwave IC (MMIC) • Easily matchable to 50 Ω • No bias coil needed • Single positive supply voltage • Low noise figure and high gain


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    PDF P-SOT363-6-1 Q62702 P-SOT363-6-1 EHT08796 GPS05604 MMIC SOT 363 marking CODE 77 MARKING CODE SMD IC 307 SMD Transistor Marking Code 71 SOT 23 smd transistor marking 329 SOT 363 marking code 62 low noise MMIC SOT 363 marking CODE 06 MMIC SOT 563 marking CODE 22 MMIC SOT 363 marking CODE 82 306 marking code transistor smd transistor code 314

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    04LT1

    Abstract: BAS70 BAS70-04LT1
    Text: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable


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    PDF BAS70-04LT1 236AB) r14525 BAS70 04LT1/D 04LT1 BAS70-04LT1

    6u sot-23

    Abstract: JFET with Yos s22 sot-23
    Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N−Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB


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    PDF MMBFJ309LT1 MMBFJ310LT1 236AB) MMBFJ309LT1 6u sot-23 JFET with Yos s22 sot-23

    sot-23 marking 6C

    Abstract: transistor y21 sot-23
    Text: ON Semiconductort JFET Transistor MMBFU310LT1 N−Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc IG 10 mAdc Gate Current 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB


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    PDF MMBFU310LT1 236AB) sot-23 marking 6C transistor y21 sot-23

    diode cg sot-23

    Abstract: No abstract text available
    Text: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable


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    PDF BAS70-04LT1 r14525 BAS70 04LT1/D diode cg sot-23

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


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    PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    MMBTH24LT1

    Abstract: transistor cg sot-23 sot-23 marking 213 MMBTH24L
    Text: MOTOROLA Order this document by MMBTH24LT1/D SEMICONDUCTOR TECHNICAL DATA MMBTH24LT1 VHF Mixer Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 • Designed for • fT = 400 MHz Min @ 8 mA 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB


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    PDF MMBTH24LT1/D MMBTH24LT1 OT-23 O-236AB) DiodesMMBTH24LT1/D MMBTH24LT1 transistor cg sot-23 sot-23 marking 213 MMBTH24L

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


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    PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    6u sot-23

    Abstract: s22 sot-23 MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 transistor y21 sot-23
    Text: ON Semiconductort JFET - VHF/UHF Amplifier Transistor MMBFJ309LT1 MMBFJ310LT1 N–Channel 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556


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    PDF MMBFJ309LT1 MMBFJ310LT1 236AB) r14525 MMBFJ309LT1/D 6u sot-23 s22 sot-23 MMBFJ309 MMBFJ309LT1 MMBFJ310 MMBFJ310LT1 transistor y21 sot-23

    MMBFU310LT1

    Abstract: SOT-23 6C
    Text: ON Semiconductort JFET Transistor MMBFU310LT1 N–Channel ON Semiconductor Preferred Device MAXIMUM RATINGS 3 Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc IG 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556


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    PDF MMBFU310LT1 236AB) r14525 MMBFU310LT1/D MMBFU310LT1 SOT-23 6C

    diode MARKING CODE CG

    Abstract: diode cg sot-23 318 MARKING MARKING CG sot23 Diodes MARKING CG SOT-23 power sot-23 Marking cg 04LT1 CG SOT23
    Text: BAS70-04LT1 Preferred Device Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount


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    PDF BAS70-04LT1 diode MARKING CODE CG diode cg sot-23 318 MARKING MARKING CG sot23 Diodes MARKING CG SOT-23 power sot-23 Marking cg 04LT1 CG SOT23

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH24LT1 VHF Mixer Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 • Designed for • fT = 400 MHz Min @ 8 mA 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol


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    PDF MMBTH24LT1 OT-23 O-236AB)

    BFY88

    Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
    Text: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration


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    PDF i200Rb D0DS332 ft-11 569-GS 000s154 hal66 if-11 BFY88 Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288

    BF964

    Abstract: No abstract text available
    Text: TELEFUNKEN ELECTRONIC TdUHFÜSWIiia electronic filC D • fl^DO^b 0005254 1 * A L 6 G ~r- BF B r 964 j Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input- and Mlxerstages especially for VHF TV-tuners Futures:


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    PDF 569-GS BF964

    BF167

    Abstract: transistor BF 37
    Text: TELEFUNKEN ELECTRONIC aie D fi^SDO^b OOOSlbO B F 167 TTiOJlIFiyiKlCSiKI electronic Creative Techrxriogtes Silicon NPN Planar RF Transistor Applications! Controlled video IF amplifier stages in common emitter configuration Features: • Small feedback capacitance


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    PDF 569-GS BF167 transistor BF 37

    Untitled

    Abstract: No abstract text available
    Text: BEE D • û53b32Q QG1712b b « S I P NPN Silicon Switching Transistors 3 S'” I Ì SIEMENS/ S P C L i • • • SEMKONDS BSS79 BSS 81 _ High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, BSS 82 PNP


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    PDF 53b32Q QG1712b BSS79 Q62702-S403 Q62702-S402 Q62702-S420 Q62702-S419 Q62702-S503 Q62702-S501 Q62702-S555