IRF450
Abstract: TA17435 mosfet IRF450 TB334
Text: IRF450 Data Sheet March 1999 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 13A, 500V Formerly developmental type TA17435. Ordering Information IRF450 PACKAGE TO-204AA 1827.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRF450
TA17435.
O-204AA
IRF450
TA17435
mosfet IRF450
TB334
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IRF450 equivalent
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 500 Volt, 0.3 Ohm, 9.0A MOSFET Low RDS on Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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SHD2185/A/B
SHD218505
IRF450
250mA
IRF450 equivalent
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 500 Volt, 0.3 Ohm, 9.0A MOSFET Low RDS on Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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SHD2185/A/B
SHD218505
IRF450
250mA
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IRF450
Abstract: SHD218505
Text: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 500 Volt, 0.3 Ohm, 9.0A MOSFET • Low RDS on • Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.
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SHD218505
SHD2185/A/B
IRF450
SHD218505
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Untitled
Abstract: No abstract text available
Text: rz7 SGS-THOMSON ^ 7 #. MISfSmiraMO ! TECHNICAL NOTE IMPROVED POWER MOSFET RUGGEDNESS IN UNCLAMPED INDUCTIVE SWITCHING INTRODUCTION Recent development work by SGS-Thomson has resulted in the production of POWER MOSFETs with improved performance in terms of unclamped
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IRF450,
BUZ45,
BUZ21
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: IRF450 CASE OUTLINE: TO-3 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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IRF450
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mosfet IRF450
Abstract: power mosfet irf450
Text: N-CHANNEL POWER MOSFET IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage
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IRF450
O204-AA)
mosfet IRF450
power mosfet irf450
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IRF450
Abstract: No abstract text available
Text: IRF450 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 2 1 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 17.15 (0.675) 16.64 (0.655) 7.87 (0.310) 6.99 (0.275)
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IRF450
00A/ms
300ms,
IRF450
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage
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IRF450
O204-AA)
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IRF450
Abstract: mosfet IRF450 mosfet n channel
Text: TECHNICAL DATA POWER MOSFET N CHANNEL Devices 13 AMPERE 500 VOLTS 0.4 Ω IRF450 • • • • REPETITIVE AVALANCHE RATINGS LOW RDS ON LOW DRIVE REQUIREMENT DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters / Test Conditions
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IRF450
IRF450
mosfet IRF450
mosfet n channel
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"high voltage current mirror"
Abstract: Automatic voltage regulator RBS MOTOR SOFT START 10 AMP 1000V RECTIFIER DIODE high voltage current mirror 220 ac INVERTER without transformer design of mosfet based power supply automatic transfer switch 400v circuit diagram N CHANNEL MOSFET 10A 1000V IRF450 equivalent
Text: Harris Semiconductor No. AN9335 Harris Intelligent Power December 1993 HIP5500 HIGH VOLTAGE 500VDC POWER SUPPLY DRIVER IC Author: George E. Danz Introduction MOSFET (shown shaded in Figure 1), this approach lacks the advantages of a “distributed” turn-off device and doesn’t
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AN9335
HIP5500
500VDC)
HIP2500
500VDC
O-220
20pin,
"high voltage current mirror"
Automatic voltage regulator RBS
MOTOR SOFT START
10 AMP 1000V RECTIFIER DIODE
high voltage current mirror
220 ac INVERTER without transformer
design of mosfet based power supply
automatic transfer switch 400v circuit diagram
N CHANNEL MOSFET 10A 1000V
IRF450 equivalent
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IRF150 MOSFET AMP circuit
Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
Text: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given
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IRF150
IRF150 MOSFET AMP circuit
forsythe
MOSFET IRF150
1. A 48V, 200A Chopper For Motor S. Clemente
A2JA
Chopper For Motor S. Clemente ant B. Pelly
IRF9130
R. Severns "Controlling Oscillation in
AN942
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Untitled
Abstract: No abstract text available
Text: mi = ^ = llll IRF450 SEME LAB MECHANICAL DATA D im ensions in m m inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40(1.197) 30.15(1.187) 17.15 (0.675)_ 16.64 (0.655) 500V V DSS ^D(cont) _ * 0 ? (0.161) 3.84 (0 .Ï5 Ï) dia. 2 pics. -JL o o a ; 2- •—
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IRF450
300ms,
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uis test
Abstract: BUZ45 BUZ21
Text: F=7 SCS-THOMSON “ / # » [¡» » Ë lL Iiê ïE M O Ê S TECHNICAL NOTE IMPROVED POWER MOSFET RUGGEDNESS IN UNCLAMPED INDUCTIVE SWITCHING INTRODUCTION Recent development work by SGS-Thomson has resulted in the production of POWER MOSFETs with improved performance in terms of unclamped
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BUZ45
BUZ21
100pH
uis test
BUZ45
BUZ21
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Untitled
Abstract: No abstract text available
Text: IRF450R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D)8.1 @Temp (øC)100 IDM Max (@25øC Amb)52 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ
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IRF450R
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irf450lc
Abstract: IRFP450LC IRFPE30 irf450
Text: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω
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IRFP450LC
12-Mar-07
irf450lc
IRFP450LC
IRFPE30
irf450
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irf450lc
Abstract: IRFP450LC IRFPE30
Text: Previous Datasheet Index Next Data Sheet PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated
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IRFP450LC
stanFPE30
irf450lc
IRFP450LC
IRFPE30
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IRF450
Abstract: mosfet IRF450
Text: PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 12 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate
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670-SSDI
SFF450i
IRF450
25q9c
F00095
mosfet IRF450
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IRF450L
Abstract: No abstract text available
Text: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω
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IRFP450LC
08-Mar-07
IRF450L
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IRF450LC
Abstract: IRFP450LC IRFPE30
Text: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω
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IRFP450LC
IRFPE30
IRF450LC
IRFP450LC
IRFPE30
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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IRF450
Abstract: mosfet IRF450 TO-254
Text: ^§H PRELIMINARY SFF450C SOLID STATE DEVICES, INC 14849 Firestone Boulevard La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 13 AMP 500 VOLTS 0.40Í2 N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■
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670-SSDI
IRF450
O-254C
O-254
F00101
mosfet IRF450 TO-254
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IRF450
Abstract: ID72
Text: PRELIMINARY SFF450/61 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 13 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■ ■
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670-SSDI
SFF450/61
IRF450
ID72
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IRFP450 inverter
Abstract: IXTH12N50A IXTH15N45A 2N6769 2N6770 IRFC450 IXTH12N50 ITXH12N45
Text: 4686226 I X Y S CORP 03 D e | 4 fl t. E S t. DOODEIS 5 / 7 □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V 0.4Q RDS(on) .
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IRFC450:
2N6769
2N6770
IRF450/IRFP450
IRF451/IRFP451
IRF452/IRFP452
1RF453/IRFP453
IXTH15N50A/IXTM15N50A
IXTH15N45A/IXTM15N45A
IXTH12N50A/IXTM12N50A
IRFP450 inverter
IXTH12N50A
IXTH15N45A
2N6770
IRFC450
IXTH12N50
ITXH12N45
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