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    POWER MOSFET DPACK Search Results

    POWER MOSFET DPACK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET DPACK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK3974-01L,S FUJI POWER MOSFET Super FAP-G Series 200509 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


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    PDF 2SK3974-01L

    Untitled

    Abstract: No abstract text available
    Text: 2SK3974-01L,S FUJI POWER MOSFET 200509 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters


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    PDF 2SK3974-01L

    mosfet vgs 5v vds 100v

    Abstract: No abstract text available
    Text: SSD50N10-18D 43A , 100V , RDS ON 18mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)


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    PDF SSD50N10-18D O-252 O-252 16-Apr-2013 mosfet vgs 5v vds 100v

    SSD20N20-125D

    Abstract: MosFET MOSFET N-CH 200V
    Text: SSD20N20-125D 12A , 200V , RDS ON 260mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)


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    PDF SSD20N20-125D O-252 O-252 13-Sep-2013 SSD20N20-125D MosFET MOSFET N-CH 200V

    SSD14N25-280D

    Abstract: MosFET
    Text: SSD14N25-280D 10.9A , 250V , RDS ON 280mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)


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    PDF SSD14N25-280D O-252 O-252 21-Mar-2013 SSD14N25-280D MosFET

    SSD20N10-130D

    Abstract: MosFET
    Text: SSD20N10-130D 17A , 90V , RDS ON 130mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)


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    PDF SSD20N10-130D O-252 O-252 15-Jun-2012 SSD20N10-130D MosFET

    SSD30N15-60D

    Abstract: MosFET
    Text: SSD30N15-60D 22A , 150V , RDS ON 69mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)


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    PDF SSD30N15-60D O-252 O-252 16-Apr-2013 SSD30N15-60D MosFET

    48v 30 a battery charger

    Abstract: GE battery management system 39a 61a
    Text: SSD50P06-15D 61A, -60V, RDS ON 17mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss


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    PDF SSD50P06-15D O-252 20-Dec-2010 48v 30 a battery charger GE battery management system 39a 61a

    SSD50P06-15D

    Abstract: MosFET
    Text: SSD50P06-15D -44A, -60V, RDS ON 17mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss


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    PDF SSD50P06-15D O-252 21-Feb-2014 SSD50P06-15D MosFET

    SSD20P15-295D

    Abstract: MosFET
    Text: SSD20P15-295D -10.7A, -150V, RDS ON 295mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss


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    PDF SSD20P15-295D -150V, O-252 10-Sep-2013 SSD20P15-295D MosFET

    SSD50P03

    Abstract: No abstract text available
    Text: SSD50P03-09D 61A, -30V, RDS ON 9mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power


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    PDF SSD50P03-09D O-252 02-Dec-2010 SSD50P03

    SSD40P04-20D

    Abstract: MosFET td 1583 diode 20D
    Text: SSD40P04-20D P-Ch Enhancement Mode Power MOSFET -36A, -40V, RDS ON 30mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this


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    PDF SSD40P04-20D O-252 14-Jul-2010 SSD40P04-20D MosFET td 1583 diode 20D

    SSD30P06-45D

    Abstract: No abstract text available
    Text: SSD30P06-45D P-Ch Enhancement Mode Power MOSFET 28A, -60V, RDS ON 49mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this


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    PDF SSD30P06-45D O-252 16-Aug-2010 SSD30P06-45D

    SSD70N04-06D

    Abstract: MosFET
    Text: SSD70N04-06D 75A, 40V, RDS ON 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power


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    PDF SSD70N04-06D O-252 00A/uS 14-Jan-2011 SSD70N04-06D MosFET

    A4539

    Abstract: IDA45
    Text: SSD50P06-15D P-Ch Enhancement Mode Power MOSFET 45A, -60V, RDS ON 17mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this


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    PDF SSD50P06-15D O-252 16-Aug-2010 A4539 IDA45

    SSD20P03-60

    Abstract: MosFET dpack power mosfet
    Text: SSD20P03-60 P-Ch Enhancement Mode Power MOSFET 24A, -30V, RDS ON 59mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.


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    PDF SSD20P03-60 O-252 18-May-2010 SSD20P03-60 MosFET dpack power mosfet

    SSD60N04-12D

    Abstract: MosFET
    Text: SSD60N04-12D N-Ch Enhancement Mode Power MOSFET 53A, 40V, RDS ON 12mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.


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    PDF SSD60N04-12D O-252 10-Jun-2010 SSD60N04-12D MosFET

    SSD20P04-60D

    Abstract: MosFET A2218 SSD20P04
    Text: SSD20P04-60D P-Ch Enhancement Mode Power MOSFET 22A, -40V, RDS ON 69mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat


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    PDF SSD20P04-60D O-252 27-Aug-2010 SSD20P04-60D MosFET A2218 SSD20P04

    SSD20P06-135D

    Abstract: MosFET 135D
    Text: SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS ON 135mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat


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    PDF SSD20P06-135D O-252 25-Aug-2010 SSD20P06-135D MosFET 135D

    ssd10n20-400d

    Abstract: ssd10n20
    Text: SSD10N20-400D N-Ch Enhancement Mode Power MOSFET 9.2A, 200V, RDS ON 400mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.


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    PDF SSD10N20-400D O-252 08-Jul-2010 ssd10n20-400d ssd10n20

    12a36

    Abstract: No abstract text available
    Text: SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS ON 255mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.


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    PDF SSD20N15-250D O-252 22-Jul-2010 12a36

    Untitled

    Abstract: No abstract text available
    Text: SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS ON 135mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat


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    PDF SSD20P06-135D O-252 16-Aug-2010

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


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    PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    SSR3055

    Abstract: LP12A u3055
    Text: N-CHANNEL POWER MOSFET SSR3055/SSU3055 FEATURES • • • • • • • • D-PACK Lower Ros on Excellent voltage stability Fast switching speeds Rugged polysllicon gate cell structure Lower Input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan
    PDF SSR3055/SSU3055 SSR3055 SSR3055/SSU3055 SSU3055 PSSR3055/SSU3055 LP12A u3055