Mosfet J49
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND
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MRF171A
Mosfet J49
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Mosfet J49
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET
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MRF171A/D
MRF171A
MRF171A
Mosfet J49
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905-170
Abstract: MRF3010 VK200 VK20019-4B
Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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MRF3010/D
MRF3010
905-170
MRF3010
VK200
VK20019-4B
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D1843
Abstract: MP45F 2SK3326B-S17-AY 2sk3326b 2SK3326
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3326B
2SK3326B
O-220)
2SK3326B-S17-AY
O-220
MP-45F)
D1843
MP45F
2SK3326B-S17-AY
2SK3326
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D1857
Abstract: 2SK3298B 2SK3298B-S17-AY mosfet 2SK329
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3298B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3298B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3298B
2SK3298B
2SK3298B-S17-AY
O-220
MP-45F)
D1857
2SK3298B-S17-AY
mosfet
2SK329
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D1843
Abstract: 2SK3326B-S17-AY 2SK3326B 2sk3326 mosfet 4702 MP45F
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3326B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3326B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3326B
2SK3326B
O-220)
2SK3326B-S17-AY
O-220
MP-45F)
D1843
2SK3326B-S17-AY
2sk3326
mosfet 4702
MP45F
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3325B
2SK3325B
2SK3325B-S19-AY
O-220AB
MP-25)
O-263
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2sk3305
Abstract: 2SK3305B-S19-AY MP-25 2SK3305B
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3305B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3305B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3305B
2SK3305B
2SK3305B-S19-AY
O-220AB
MP-25)
2sk3305
2SK3305B-S19-AY
MP-25
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D1846
Abstract: 2SK3306B-S17-AY 2sk3306 2sk3306b
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3306B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3306B is N-Channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3306B
2SK3306B
O-220)
2SK3306B-S17-AY
O-220
MP-45F)
D1846
2SK3306B-S17-AY
2sk3306
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D1857
Abstract: 2SK3299B-S19-AY MP-25 2SK3299B
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3299B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3299B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3299B
2SK3299B
2SK3299B-S19-AY
O-220AB
MP-25)
D1857
2SK3299B-S19-AY
MP-25
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2SK3325B
Abstract: MP-25ZK D1842 D18429EJ2V0DS00 2SK3325B-S19-AY 2SK3325B-ZK-E1-AY 2SK3325B-ZK-E2-AY MP-25
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3325B SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3325B is N-channel MOSFET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
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2SK3325B
2SK3325B
2SK3325B-S19-AY
2SK3325B-ZK-E1-AY
O-220AB
MP-25)
O-263
MP-25ZK)
MP-25ZK
D1842
D18429EJ2V0DS00
2SK3325B-S19-AY
2SK3325B-ZK-E1-AY
2SK3325B-ZK-E2-AY
MP-25
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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MRF3010/D
MRF3010
MRF3010
MRF3010/D
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NEM0995F06-30
Abstract: NEC MOSFET PUSHPULL
Text: DATA SHEET PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0995F06-30 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES PACKAGE DRAWING Unit: mm • High output, High gain 45˚
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NEM0995F06-30
NEM0995F06-30
NEC MOSFET PUSHPULL
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D1790
Abstract: marking H12 Diode marking m7 2SJ185 2SK1399 NEC PART NUMBER MARKING
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ185 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. 2.8 ±0.2 2.9 ±0.2 power saving. FEATURES • Directly driven by ICs having a 3 V power supply.
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2SJ185
2SJ185
2SK1399
D1790
marking H12
Diode marking m7
2SK1399
NEC PART NUMBER MARKING
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D1781
Abstract: 2SK1588 TC-2352A
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1588 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1588 is an N-channel vertical type MOSFET which 4.5 ±0.1 can be driven by 2.5 V power supply. As the MOSFET is driven by low voltage and does not
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2SK1588
2SK1588
D1781
TC-2352A
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sd 431 transistor
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY
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2SK4058
2SK4058
2SK4058-S15-AY
O-251
O-252
2SK4058-ZK-E1-AY
2SK4058-ZK-E2-AY
O-251)
sd 431 transistor
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY
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2SK4057
2SK4057
2SK4057-S15-AY
2SK4057-ZK-E1-AY
2SK4057-ZK-E2-AY
O-251
O-252
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marking g20
Abstract: 2SK1658
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for
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2SK1658
2SK1658
SC-70
marking g20
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Mosfet J49
Abstract: DL110 MRF171A MRF171 VK200 MOTOROLA MASTER RF Products
Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.
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MRF171A/D
MRF171A
Mosfet J49
DL110
MRF171A
MRF171
VK200
MOTOROLA MASTER RF Products
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726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Abstract: 741 datasheet motorola MOTOROLA POWER 726 MOS FET TRANSISTOR MOTOROLA TRANSISTOR 726 motorola MOSFET 935 MRF166W motorola rf book
Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages to 30 – 500 MHz.
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MRF166W/D
MRF166W
726 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
741 datasheet motorola
MOTOROLA POWER 726 MOS FET TRANSISTOR
MOTOROLA TRANSISTOR 726
motorola MOSFET 935
MRF166W
motorola rf book
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NEM0899F06-30
Abstract: J294 J29-4
Text: DATA SHEET PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0899F06-30 N-CHANNEL SILICON POWER MOSFET FOR UHF-TV TRANSMITTER POWER AMPLIFIER FEATURES PACKAGE DRAWING Unit: mm • High output, high gain, high efficiency Po = 100 W, GL = 12 dB, KD = 50 %
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NEM0899F06-30
NEM0899F06-30
J294
J29-4
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MOSFET BOOK
Abstract: book mosfet
Text: 1233-7091 Septem ber 1997 Advanced Power MOSFET High Voltagei 700~~900\ ' 1998 DATA BOOK ELECTRONICS
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j718
Abstract: VK200/10-3B
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
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OCR Scan
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PDF
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MRF3010
DL110/D)
MRF3010
VK200
j718
VK200/10-3B
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MOSFET BOOK
Abstract: No abstract text available
Text: ft 1232-7091 Septem ber 1997 Advanced Power MOSFET^ Medium Voltage 200 ~ 600 V 1998 DATA BOOK E L E C T R O N IC S
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