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    POWER MOSFET 500V 20A CIRCUIT Search Results

    POWER MOSFET 500V 20A CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd

    POWER MOSFET 500V 20A CIRCUIT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    datasheet irfp460 mosfet

    Abstract: IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit
    Text: IRFP460 Data Sheet January 2002 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features • 20A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP460 TA17465. datasheet irfp460 mosfet IRFP460 application irfp460 IRFP460 APPLICATION NOTE 5102 mosfet irfp460 data sheet power mosfet 500v 20a circuit TB334 irfp460 dc motor circuit PDF

    irfp460 dc motor circuit

    Abstract: IRFP460 TB334
    Text: IRFP460 Data Sheet July 1999 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP460 • 20A, 500V • rDS ON = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    Original     		IRFP460 TB334 O-247 irfp460 dc motor circuit IRFP460 TB334 PDF

    20nm50

    Abstract: STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP V435
    Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.20Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A


    Original     		STP20NM50 STP20NM50FP STB20NM50 STB20NM50-1 O-220/FP/D2PAK/I2PAK STP20NM50/FP STB20NM50 20nm50 STB20NM50-1 STP20NM50FP V435 PDF

    20NM50

    Abstract: STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP
    Text: STP20NM50 - STP20NM50FP STB20NM50 - STB20NM50-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM50/FP STB20NM50 STB20NM50-1 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V 500V 500V <0.25Ω <0.25Ω <0.25Ω 20 A 20 A


    Original     		STP20NM50 STP20NM50FP STB20NM50 STB20NM50-1 O-220/FP/D2PAK/I2PAK STP20NM50/FP STB20NM50 20NM50 STB20NM50-1 STP20NM50FP PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94984 IRFB20N50KPbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS on typ. ID Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.21Ω 20A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free


    Original     		IRFB20N50KPbF O-220AB 08-Mar-07 PDF

    mosfet 20A 500V

    Abstract: FDP20N50 "Power Diode" 500V 20A FDPF20N50
    Text: TM UniFET FDP20N50 / FDPF20N50 500V N-Channel MOSFET Features Description • 20A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDP20N50 FDPF20N50 FDPF20N50 mosfet 20A 500V "Power Diode" 500V 20A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-94098 IRFP460N SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l VDSS Rds(on) max ID 500V 0.24Ω 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PD-94098 IRFP460N AN1001) O-247AC 08-Mar-07 PDF

    IRFP460N

    Abstract: AN1001 313X0
    Text: PD-94098 IRFP460N SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l VDSS Rds(on) max ID 500V 0.24Ω 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		PD-94098 IRFP460N AN1001) O-247AC IRFP460N AN1001 313X0 PDF

    FIGURE13

    Abstract: IRF1010 IRFB20N50K
    Text: PD - 94418 IRFB20N50K SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 0.21Ω 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement


    Original     		IRFB20N50K O-220AB O-220AB. O-220 IRF1010 FIGURE13 IRF1010 IRFB20N50K PDF

    IRFP460 APPLICATION NOTE

    Abstract: IRFP460 application IRFP460 transistor irfp460 dc motor circuit
    Text: IRFP460 Data Sheet Title FP4 bt A, 0V, 70 m, 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		IRFP460 IRFP460 APPLICATION NOTE IRFP460 application IRFP460 transistor irfp460 dc motor circuit PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94418A SMPS MOSFET IRFB20N50K HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l VDSS RDS(on) typ. ID 500V 0.21Ω 20A Benefits l Low Gate Charge Qg results in Simple Drive Requirement


    Original     		4418A IRFB20N50K O-220AB 08-Mar-07 PDF

    S-1380

    Abstract: STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters
    Text: Q * Be R t s g STP20NM50FD STB20NM50FD-1 n o ds N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A


    Original     		STP20NM50FD STB20NM50FD-1 O-220/I2PAK S-1380 STB20NM50FD-1 STP20NM50FD ZVS phase-shift converters PDF

    IRFP460A

    Abstract: No abstract text available
    Text: IRFP460A 20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche


    Original     		IRFP460A O-247 IRFP460A PDF

    P20NM50FD

    Abstract: B20NM50FD P20NM50 STP20NM50FD B20NM50FD-1 STB20NM50FD-1 ZVS phase-shift converters
    Text: STP20NM50FD STB20NM50FD-1 N-CHANNEL 500V - 0.22Ω - 20A TO-220/I2PAK FDmesh Power MOSFET with FAST DIODE TYPE VDSS RDS(on) Rds(on)*Qg ID STP20NM50FD STB20NM50FD-1 500V 500V <0.25Ω <0.25Ω 8.36 Ω*nC 8.36 Ω*nC 20 A 20 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22Ω


    Original     		STP20NM50FD STB20NM50FD-1 O-220/I2PAK O-220 P20NM50FD B20NM50FD P20NM50 STP20NM50FD B20NM50FD-1 STB20NM50FD-1 ZVS phase-shift converters PDF

    STB20NM50FD

    Abstract: ZVS phase-shift converters
    Text: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD n n n n n n VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		STB20NM50FD STB20NM50FD ZVS phase-shift converters PDF

    Untitled

    Abstract: No abstract text available
    Text: STB20NM50FD N-CHANNEL 500V - 0.20Ω - 20A D2PAK FDmesh Power MOSFET With FAST DIODE PRELIMINARY DATA TYPE STB20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED


    Original     		STB20NM50FD PDF

    STW20NM50

    Abstract: Diode 400V 20A STW20NM50N power mosfet 500v 20a circuit
    Text: STW20NM50 N-CHANNEL 500V - 0.20Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM50 n n n n n n VDSS RDS on ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE


    Original     		STW20NM50 O-247 STW20NM50 Diode 400V 20A STW20NM50N power mosfet 500v 20a circuit PDF

    400V to 12V DC Regulator

    Abstract: IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh
    Text: PD - 91741A IRHNB7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-3 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		1741A IRHNB7460SE MIL-STD-750, MlL-STD-750, 400V to 12V DC Regulator IRHNB7460SE 400v 20A ultra fast recovery diode si 220 mh PDF

    IRHNA7460SE

    Abstract: HEXFET Power MOSFET SMD2
    Text: PD - 91399B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		91399B IRHNA7460SE MIL-STD-750, MlL-STD-750, IRHNA7460SE HEXFET Power MOSFET SMD2 PDF

    IRHNA7460SE

    Abstract: No abstract text available
    Text: PD - 91399A IRHNA7460SE 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHNA7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A SMD-2 International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		1399A IRHNA7460SE MIL-STD-750, MlL-STD-750, IRHNA7460SE PDF

    ISS106

    Abstract: No abstract text available
    Text: AP18N50W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance D Simple Drive Requirement Fast Switching Characteristic BVDSS 500V RDS ON 0.27 ID G 20A S Description Advanced Power MOSFETs from APEC provide the designer with


    Original     		AP18N50W 100ms ISS106 PDF

    Untitled

    Abstract: No abstract text available
    Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE


    Original     		STW20NM50FD O-247 PDF

    S-1380

    Abstract: STW20NM50FD ZVS phase-shift converters
    Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE


    Original     		STW20NM50FD O-247 S-1380 STW20NM50FD ZVS phase-shift converters PDF

    S-1380

    Abstract: STW20NM50FD ZVS phase-shift converters
    Text: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE


    Original     		STW20NM50FD O-247 S-1380 STW20NM50FD ZVS phase-shift converters PDF