Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    POWER MOSFET 30 A, 60 V, LOGIC LEVEL Search Results

    POWER MOSFET 30 A, 60 V, LOGIC LEVEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET 30 A, 60 V, LOGIC LEVEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SUD40N06-25L-E3

    Abstract: SUD40N06-25L
    Text: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested


    Original     		PDF SUD40N06-25L O-252 SUD40N06-25L--E3 18-Jul-08 SUD40N06-25L-E3 SUD40N06-25L

    Untitled

    Abstract: No abstract text available
    Text: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested


    Original     		PDF SUD40N06-25L O-252 SUD40N06-25L SUD40N06-25L--E3 08-Apr-05

    SUD40N06-25L

    Abstract: No abstract text available
    Text: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested


    Original     		PDF SUD40N06-25L O-252 S-31724--Rev. 18-Aug-03 SUD40N06-25L

    Untitled

    Abstract: No abstract text available
    Text: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested


    Original     		PDF SUD40N06-25L O-252 SUD40N06-25L SUD40N06-25L--E3 S-50281--Rev. 21-Feb-05

    STL8DN6LF3

    Abstract: No abstract text available
    Text: STL8DN6LF3 Dual N-channel 60 V, 20 mΩ, 7.8 A STripFET III Power MOSFET in PowerFLAT™ 5x6 dual pad Preliminary data Features Type VDSS RDS on max ID STL8DN6LF3 60 V < 30 mΩ 7.8 A (1) 1. The value is rated according Rthj-pcb 1 2 • Logic level VGS(th)


    Original     		PDF

    IRLSZ44A

    Abstract: No abstract text available
    Text: IRLSZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS on = 0.025 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V


    Original     		PDF IRLSZ44A O-220F IRLSZ44A

    IRLZ34A

    Abstract: No abstract text available
    Text: IRLZ34A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.046 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V


    Original     		PDF IRLZ34A O-220 IRLZ34A

    TL494

    Abstract: TC429
    Text: SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output


    Original     		PDF TC429 75nsec 35nsec 2500pF TL494

    high-speed power mosfet 2Mhz

    Abstract: TL494 tl494 mosfet SG1524 application note tl494 24v power switch tl494 tl494 application notes TC429CPA TC429 data sheet tl494
    Text: 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER TC429 TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output


    Original     		PDF TC429 TC429 2500pF 25nsec. 60nsec. high-speed power mosfet 2Mhz TL494 tl494 mosfet SG1524 application note tl494 24v power switch tl494 tl494 application notes TC429CPA data sheet tl494

    Logic Level N-Channel Power MOSFET

    Abstract: Book Microelectronic logic level n channel MOSFET CMT60N06
    Text: CMT60N06 N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES DC motor control Low ON Resistance UPS Low Gate Charge Class D Amplifier Peak Current vs Pulse Width Curve Inductive Switching Curves VDSS RDS ON Typ. ID 60V 15.8mΩ 60A PIN CONFIGURATION SYMBOL


    Original     		PDF CMT60N06 O-220 Logic Level N-Channel Power MOSFET Book Microelectronic logic level n channel MOSFET CMT60N06

    Untitled

    Abstract: No abstract text available
    Text: CMT60N06G N-CHANNEL Logic Level Power MOSFET APPLICATION FEATURES ‹ DC motor control ‹ Low ON Resistance ‹ UPS ‹ Low Gate Charge ‹ Class D Amplifier ‹ Peak Current vs Pulse Width Curve ‹ Inductive Switching Curves VDSS RDS ON Typ. ID 60V 15.8mΩ 60A


    Original     		PDF CMT60N06G O-220

    mic4225

    Abstract: mic422 MIC4224 GRM31MR71H105KA01 mosfet schematic solenoid driver si4174dy 8pin dual gate driver Motor Driver Circuit schematic 20 ampere MIC4223YM vishay 2.2nf 2kv
    Text: MIC4223/MIC4224/MIC4225 Dual 4A, 4.5V to 18V, 15ns Switch Time, Low-Side MOSFET Drivers with Enable General Description Features The MIC4223/MIC4224/MIC4225 are a family of a dual 4A, High-Speed, Low-side MOSFET drivers with logic-level driver enables. The devices are fabricated on Micrel’s


    Original     		PDF MIC4223/MIC4224/MIC4225 MIC4223/MIC4224/MIC4225 2000pF M9999-061109-A mic4225 mic422 MIC4224 GRM31MR71H105KA01 mosfet schematic solenoid driver si4174dy 8pin dual gate driver Motor Driver Circuit schematic 20 ampere MIC4223YM vishay 2.2nf 2kv

    tl494 mosfet

    Abstract: se5560 Power Supply TL494 tl494 applications tc4420 tl494 application notes tl494 design tl494 equivalent TC429 DRIVERS high-speed power MOSFET
    Text: 1 TC429 6A SINGLE HIGH-SPEED, CMOS POWER MOSFET DRIVER 2 FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC429 is a high-speed, single CMOS-level translator and driver. Designed specifically to drive highly capacitive power MOSFET gates, the TC429 features 2.5Ω output


    Original     		PDF TC429 TC429 2500pF 25nsec. 60nsec. 2500pF tl494 mosfet se5560 Power Supply TL494 tl494 applications tc4420 tl494 application notes tl494 design tl494 equivalent DRIVERS high-speed power MOSFET

    PSMN4R3-30PL

    Abstract: transistor C982 PSMN4R3 43-m diode
    Text: PSMN4R3-30PL N-channel 30 V 4.3 mΩ logic level MOSFET Rev. 01 — 16 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN4R3-30PL PSMN4R3-30PL transistor C982 PSMN4R3 43-m diode

    PSMN1R6-30YL

    Abstract: No abstract text available
    Text: PSMN1R6-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 01 — 23 October 2009 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN1R6-30YL PSMN1R6-30YL

    PSMN2R0-30PL

    Abstract: No abstract text available
    Text: PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET Rev. 01 — 24 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN2R0-30PL PSMN2R0-30PL

    PSMN1R3-30YL

    Abstract: No abstract text available
    Text: PSMN1R3-30YL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN1R3-30YL PSMN1R3-30YL

    PSMN1R7-30YL

    Abstract: transistor C982 An10273
    Text: PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Rev. 04 — 20 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN1R7-30YL PSMN1R7-30YL transistor C982 An10273

    Untitled

    Abstract: No abstract text available
    Text: PSMN1R5-30YL N-channel 30 V 1.5 mΩ logic level MOSFET in LFPAK Rev. 01 — 9 April 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN1R5-30YL

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 21 August 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power SO8 package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9K17-60E LFPAK56D

    transistor C982

    Abstract: PSMN2R7-30PL
    Text: PSMN2R7-30PL N-channel 30 V 2.7 mΩ logic level MOSFET Rev. 01 — 26 February 2010 Objective data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN2R7-30PL PSMN2R7-30PL transistor C982

    PSMN1R6-30PL

    Abstract: No abstract text available
    Text: PSMN1R6-30PL N-channel 30 V 1.7 mΩ logic level MOSFET Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


    Original     		PDF PSMN1R6-30PL PSMN1R6-30PL

    HITACHI Power MOSFET Arrays

    Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 HITACHI Power MOSFET Arrays 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973

    2SK1254

    Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16 4AK17