2SA1588
Abstract: 2SC4118
Text: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
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2SA1588
2SC4118
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2SA1588
Abstract: 2SC4118
Text: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
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2SA1588
2SC4118
2SA1588
2SC4118
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Untitled
Abstract: No abstract text available
Text: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
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2SA1588
2SC4118
SC-70
12portation
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Untitled
Abstract: No abstract text available
Text: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity • Unit: mm : hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
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2SA1588
2SC4118
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2SA1588
Abstract: 2SC4118 toshiba marking
Text: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm Switching Applications • Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
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2SC4118
2SA1588
2SA1588
2SC4118
toshiba marking
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2sc4118
Abstract: 2SA1588
Text: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity • Unit: mm : hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
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2SA1588
2SC4118
2sc4118
2SA1588
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2SA1588
Abstract: 2SC4118
Text: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
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2SC4118
2SA1588
2SA1588
2SC4118
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Untitled
Abstract: No abstract text available
Text: 2SA1588 TOSHIBA Transistor Silicon PNP Epitaxial PCT process 2SA1588 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
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2SA1588
2SC4118
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2SA1588
Abstract: 2SC4118
Text: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
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2SC4118
2SA1588
2SA1588
2SC4118
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Untitled
Abstract: No abstract text available
Text: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
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2SC4118
2SA1588
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2SA1588
Abstract: 2SC4118 JEDEC SC-70
Text: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • · Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
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2SC4118
2SA1588
2SA1588
2SC4118
JEDEC SC-70
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Untitled
Abstract: No abstract text available
Text: 2SC4118 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4118 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • • Unit: mm Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
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2SC4118
2SA1588
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Untitled
Abstract: No abstract text available
Text: Analog signal isolator 2-channel IM35-22EX-HI/24VDC The standard current signal is galvanically separated and transferred via the 2-channel isolating transducer IM35-22EX-HI/24VDC from the non-Ex area to the Ex-area without attenuation 1:1 . In addition to analog signals,
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IM35-22EX-HI/24VDC
D-45472
2013-07-13T20
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Untitled
Abstract: No abstract text available
Text: Potentiometer amplifier 2-channel IM36-22EX-I The 2-channel potentiometer amplifier IM36-22EX-I separates signals from 3-wire or 5-wire potentiometers and transfers these as standard 0/4…20 mA analog signals from the Ex area to the non-Ex area. Live-zero operation is activated for both channels through
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IM36-22EX-I
IM36-22EX-I
D-45472
2013-07-13T20
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t 3866 power transistor
Abstract: t 3866 transistor c 3866 transistor transistor t 3866 3866 transistor C 3866 t 3866 transistor 3866 3866 2n 3866 transistor
Text: 2N 3866 NPN S IL IC O N T R A N SIST O R , E P IT A X IA L P L A N A R T R A N S IS T O R N P N S IL IC IU M , P L A N A R E P IT A X IA L - VHF-UHF ampliftors and ofcHlaton AmpUfkttmjrt ou otcMttmjn VHF-UHF Maximum power dissipation v CEO 30V v CEsat<100/200 m A*
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250MHz
2N3866
t 3866 power transistor
t 3866 transistor
c 3866 transistor
transistor t 3866
3866 transistor
C 3866
t 3866
transistor 3866
3866
2n 3866 transistor
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76105DK8
Abstract: No abstract text available
Text: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76105DK8
1-800-4-HARRIS
76105DK8
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AY58126
Abstract: No abstract text available
Text: MICROCHIP TECHNOLOGY INC — 25E D • bl03SQl OOOM'lb? 7 ■ • T -7 5 -S ^ -O Ì ^ AY58126/8126T AY58146/8146T M ic r o c h ip SINGLE BAUD RATE GENERATOR FEATURES PIN CONFIGURATIONS • Single +5V power supply • On-chip crystal oscillator 8126/8146 or external
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bl03SQl
AY58126/8126T
AY58146/8146T
8126/8126T/8146/8146T
8146/8146T)
DS70008B-7
t103201
AY58126
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27HC191
Abstract: 27HC tcs2
Text: MICROCHIP TECHNOLOGY INC 5EE D • blD3SQl Q0QMÖ05 3 'F W r llr Z q M 27HC191 /27HC291 ic r o c h ip 16K 2K x 8 High Speed CMOS UV Erasable PROM FEATURES DESCRIPTION • Bipolar performance — 35ns Access time available • CMOS technology for low power consumption
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27HC191
/27HC291
-24-pin
-28-pin
7HC291
27HC291
27HC
tcs2
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26c64
Abstract: 26C64B 28C64B 28C64B-25 28C64B-70 28C64 28C64B-12 28C64B-90 28C64B EEPROM *26C64
Text: 28C64B M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 7 0 ,90 ,1 2 0 ,1 50 ,2 0 0 , 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA Active • 150|iA Standby • Fast Write Cycle Times
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28C64B
250ns
64-Byte
DS11120A-7
bl03S01
28C64B_
T-46-13-27
28C64B-
120ns
150ns
26c64
26C64B
28C64B
28C64B-25
28C64B-70
28C64
28C64B-12
28C64B-90
28C64B EEPROM
*26C64
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2N5109
Abstract: rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 rca 0190 transistor field strength meter
Text: File No. 281 RF Power T ran sisto rs Solid State Division 2N5109 Silicon N-P-N Overlay Transistor High G ain fo r Line A m p lifie rs in C A T V and M A T V E q uip m en t Features: • High gairvbandwidth product ■ Large dynam ic range ■ Low distortion
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2N5109
RCA-2N5109*
2N5109
TA2800.
rca 2N5109
RCA-2N5109
TA2800
2n5109 rca
CF-102-Q1
IN5109
transistor 2N5109
rca 0190 transistor
field strength meter
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8748E
Abstract: LA 4440 IC 555E-03 IC 4033 internal structure ds1633k
Text: D S 1 63 3 D A L L A S s e m ic o n d u c to r FEATURES DS1633 High-Speed Battery Recharger PIN ASSIGNMENT TO-22Q Recharges Lithium, NiCad, NiMH and Lead a d d bat teries Retains battery and power supply lim its in onboard mem ory Serial 1 -w ire interface is used to program operat
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DS1633
O-22Q
8748E
LA 4440 IC
555E-03
IC 4033 internal structure
ds1633k
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power 22E
Abstract: 2SC4399 ic power 22E
Text: SANYO SEMICONDUCTOR CÔRP 22E D 7m07h Q OO b T E T S F eatures • High power gain: PG= 25dB typ f= 100MHz •Very small-sized package permitting the 2SC4399-applied sets to be made small and slim Absolute Maximum R atings atT a= 2 5 0C Collector to Base Voltage
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100MHz)
2SC4399-applied
100MHz
I00MI
power 22E
2SC4399
ic power 22E
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DAC73K
Abstract: DAC736K DAC736 AC736 DAC73 DAC73/736
Text: BURR-BROÙJN CORP 22E D • 17313bS c E 3 E 3 3 ■ T-S/-Q?’/é DAC73 DAC736 BURR-BROW N Ì G D lbb b ? B High Resolution 16-BIT DIGITAL-TO-ANALOG CON VERTER FEATURES • 16-BIT RESOLUTION • ±1/2LSB MAXIMUM NONLINEARITY •LO W DRIFT • CURRENT OR VOLTAGE OUTPUT
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17313bS
DAC73
DAC736
16-BIT
DAC73)
DAC73K
DAC736K
DAC736
AC736
DAC73/736
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP 22E D 7n7Q7ti OOOhööS T -3H 5 2SC4406 2059 N P N Epitaxial P la n a r S ilic o n T ra n s is to r VHF M IX, OSC Applications 2759A A p p lic a tio n s •V H F m ixers, frequency converters, local oscillators F e a tu r e s • H igh cutoff frequency : f r = 1 .2GHz typ
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2SC4406
2SC4406-applied
D00b70b
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