RSX201L-30
Abstract: No abstract text available
Text: RSX201L-30 Diodes Shottky barrier diode RSX201L-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode. Rectifier for power supply units. Battery protection against reversal current CATHODE MARK 1 2 2.6±0.2 0.1±0.02 0.1 5.0±0.3
|
Original
|
RSX201L-30
EX2003
RSX201L-30
|
PDF
|
RSX101M-30
Abstract: No abstract text available
Text: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU
|
Original
|
RSX101M-30
RSX101M-30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU
|
Original
|
RSX101M-30
|
PDF
|
RSX301L-30
Abstract: No abstract text available
Text: RSX301L-30 Diodes Shottky barrier diode RSX301L-30 !External dimensions Unit : mm !Application High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 5 6 !Features 1) Small mold type. (PMDS (4526) )
|
Original
|
RSX301L-30
RSX301L-30
|
PDF
|
pj 69 diode
Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
Text: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU
|
Original
|
LeicestershireLE17
Vo145
p1595
ICSCRM99)
0-7803-6404-X/00/
pj 69 diode
shottky barrier diode 100V 100A
diode pj
sic igbt 1000V 400 A
failure analysis IGBT
sic diode
diode schottky 600v
Cree SiC diode die
300C
600C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1
|
Original
|
RB480Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1
|
Original
|
RB480Y
|
PDF
|
RB050LA-40
Abstract: rb050la
Text: RB050LA-40 Diodes Shottky barrier diode RB050LA-40 !External dimensions Unit : mm !Application General rectification. CATHODE MARK 2.6±0.1 ROHM : EIAJ : − JEDEC : !Structure Silicon Epitaxial Planer 0.1±0.12 0.0 4.7±0.3 35 !Features 1) Small and Thin power mold type (PMDT).
|
Original
|
RB050LA-40
RB050LA-40
rb050la
|
PDF
|
RB160M-60
Abstract: No abstract text available
Text: RB160M-60 Diodes Shottky barrier diode RB160M-60 !External dimensions Unit : mm !Application General rectification. 1.6±0.1 3.5±0.2 76 !Features 1) Small power mold type (PMDU). 2) High reliability. 3) Low IR. 2.6±0.1 0.9±0.1 0.80±0.1 ROHM : EIAJ : −
|
Original
|
RB160M-60
RB160M-60
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1
|
Original
|
RB480Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RB160M-60 Diodes Shottky barrier diode RB160M-60 zExternal dimensions Unit : mm zApplication General rectification. 1.6±0.1 3.5±0.2 76 zFeatures 1) Small power mold type (PMDU). 2) High reliability. 3) Low IR. 2.6±0.1 0.9±0.1 0.80±0.1 ROHM : EIAJ : −
|
Original
|
RB160M-60
|
PDF
|
RSX501L-20
Abstract: No abstract text available
Text: RSX501L-20 Diodes Shottky barrier diode RSX501L-20 zExternal dimensions Unit : mm zApplication General rectification. CATHODE MARK 5 7 3 4 2.6±0.2 0.1±0.02 0.1 5.0±0.3 zFeatures 1) Small power mold type. (PMDS) 2) High reliability. 3) Low VF. 4.5±0.2
|
Original
|
RSX501L-20
RSX501L-20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RB160M-30 Diodes Shottky barrier diode RB160M-30 zExternal dimensions Unit : mm zApplication General rectification. CATHODE MARK 0.1± 0.1 0.05 1.6±0.1 3.5±0.2 73 zFeatures 1) Small power mold type (PMDU). 2) High reliability. 3) Low VF. 2.6±0.1 0.9±0.1
|
Original
|
RB160M-30
OD-123
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RSX051VA-30 Diodes Shottky barrier diode RSX051VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.6±0.2 0.1 1.3±0.1 0.4±0.1 P zFeatures 1) Small power mold type. (TUMD2 (1913) )
|
Original
|
RSX051VA-30
|
PDF
|
|
RSX101VA-30
Abstract: No abstract text available
Text: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.
|
Original
|
RSX101VA-30
RSX101VA-30
|
PDF
|
RSX101VA-30
Abstract: No abstract text available
Text: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.
|
Original
|
RSX101VA-30
RSX101VA-30
|
PDF
|
RSX071VA-30
Abstract: No abstract text available
Text: RSX071VA-30 Diodes Shottky barrier diode RSX071VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.6±0.2 0.1 1.3±0.1 0.4±0.1 Q zFeatures 1) Small power mold type. (TUMD2 (1913) )
|
Original
|
RSX071VA-30
RSX071VA-30
|
PDF
|
RSX071VA-30
Abstract: No abstract text available
Text: RSX071VA-30 Diodes Shottky barrier diode RSX071VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 Q zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.
|
Original
|
RSX071VA-30
-40ipment
RSX071VA-30
|
PDF
|
RSX051VA-30
Abstract: No abstract text available
Text: RSX051VA-30 Diodes Shottky barrier diode RSX051VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 P zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.
|
Original
|
RSX051VA-30
-40ipment
RSX051VA-30
|
PDF
|
RSX301LA-30
Abstract: No abstract text available
Text: RSX301LA-30 Diodes Shottky barrier diode RSX301LA-30 !External dimensions Unit : mm !Application General rectification. CATHODE MARK 2.6±0.2 ROHM : EIAJ : − JEDEC : !Structure Silicon Epitaxial Planer 0.2±0.15 0.1 4.7±0.3 56 !Features 1) Small and Thin power mold type (PMDT).
|
Original
|
RSX301LA-30
RSX301LA-30
|
PDF
|
RB420D
Abstract: No abstract text available
Text: RB420D Diodes Shottky barrier diode RB420D zLead size figure Unit : mm 1.9 2.9±0.2 各リードとも Each lead has same dimension 同寸法 +0.1 0.95 1.0MIN. 0.15 -0.06 +0.2 (3) 0.8MIN. (1) 0.95 zStructure Silicon epitaxial planar 0.3~0.6 0~0.1
|
Original
|
RB420D
S0T-346
SC-59
RB420D
|
PDF
|
RB501V-40
Abstract: No abstract text available
Text: RB501V-40 Diodes Shottky barrier diode RB501V-40 zApplication Low current rectification zExternal dimensions Unit : mm zLead size figure (Unit : mm) 0.1±0.1 0.05 0.9MIN. 0.8MIN. 1.25±0.1 2.5±0.2 1.7±0.1 2.1 zFeatures 1) Ultra Small mold type. (UMD2)
|
Original
|
RB501V-40
S0D-323
SC-90/A
RB501V-40
|
PDF
|
RSX051VA-30
Abstract: No abstract text available
Text: RSX051VA-30 Diodes Shottky barrier diode RSX051VA-30 zExternal dimensions Unit : mm zApplication General rectification. zLead size figure (Unit : mm) 0.17±0.1 0.05 1.1 1.3±0.05 2.0 zFeatures 1) Small mold type. (TUMD2) 2) Low VF 3) High reliability.
|
Original
|
RSX051VA-30
RSX051VA-30
|
PDF
|
RSX051VA-30
Abstract: No abstract text available
Text: RSX051VA-30 Diodes Shottky barrier diode RSX051VA-30 zApplication General rectification. zExternal dimensions Unit : mm zLead size figure (Unit : mm) 1.1 0.17±0.1 0.05 2.5±0.2 1.9±0.1 zFeatures 1) Small mold type. (TUMD2) 2) Low VF 3) High reliability.
|
Original
|
RSX051VA-30
RSX051VA-30
|
PDF
|