POWER DIODES, TOSHIBA Search Results

POWER DIODES, TOSHIBA Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

POWER DIODES, TOSHIBA Price and Stock

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TE Connectivity TL1220R3BBBRG-POWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	TL1220R3BBBRG-POWER					1 - 10 - 100 - 1000 $2.74 10000 $2.74	Buy Now
TE Connectivity TL1220R1BBBG-POWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	TL1220R1BBBG-POWER					1 - 10 - 100 - 1000 $3.53 10000 $3.53	Buy Now
TE Connectivity TL1220R2BBBOG-POWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	TL1220R2BBBOG-POWER					1 - 10 - 100 - 1000 $3.7 10000 $3.7	Buy Now
Thomas & Betts POWER-TOOL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	POWER-TOOL					1 $35792.4 10 $34726.68 100 $34726.68 1000 $34726.68 10000 $34726.68	Buy Now
TE Connectivity TL1220R2BBBRG-POWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	TL1220R2BBBRG-POWER					1 - 10 - 100 - 1000 $3.22 10000 $3.22	Buy Now

Find more POWER DIODES, TOSHIBA price and stock on Findchips.com

POWER DIODES, TOSHIBA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
reverse-conducting thyristor Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate	Original	MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor	PDF
1-1L1A Abstract: No abstract text available Text: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Power dissipation Rating P* Junction temperature Storage temperature range Unit	Original	DF2S16FS IEC61000-4-2 1-1L1A	PDF
EQUIVALENT BYD33D Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and	Original	PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent	PDF
Untitled Abstract: No abstract text available Text: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C	Original		PDF
marking AU Abstract: No abstract text available Text: DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A5.6LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C	Original		PDF
Untitled Abstract: No abstract text available Text: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range	Original		PDF
Untitled Abstract: No abstract text available Text: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit P* 150 mW Power dissipation Junction temperature Storage temperature range	Original	DF2S24FS IEC61000-4-2	PDF
Untitled Abstract: No abstract text available Text: DF2S8.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S8.2FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.2 ±0.05 0.07M A Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature	Original		PDF
DF2S16FS Abstract: No abstract text available Text: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm 0.07M A Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C	Original	DF2S16FS DF2S16FS	PDF
Untitled Abstract: No abstract text available Text: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg	Original	DF2S24FS	PDF
Untitled Abstract: No abstract text available Text: DF2S6.8FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.07M A Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150	Original	IEC61000-4-2	PDF
Untitled Abstract: No abstract text available Text: DF2S8.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S8.2FS Diodes for Protecting against ESD Unit in mm 0.2 ±0.05 Maximum Ratings Ta = 25°C 0.07M A Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature	Original	IEC61000-4-2	PDF
Untitled Abstract: No abstract text available Text: DF2S6.8FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S6.8FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150 °C	Original	IEC61000-4-2	PDF
DF2S24FS Abstract: No abstract text available Text: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm 0.07M A Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C	Original	DF2S24FS DF2S24FS	PDF

Untitled Abstract: No abstract text available Text: DF2S8.2FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S8.2FS Diodes for Protecting against ESD Unit in mm Maximum Ratings Ta = 25°C 0.07M Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150 °C	Original	IEC61000-4-2	PDF
Untitled Abstract: No abstract text available Text: DF3A8.2FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2FV Diodes for Protecting against ESD Symbol Rating Unit P* 150 mW Power dissipation Junction temperature Storage temperature range Tj 150 °C Tstg −55~150 °C 2 0.32±0.05 3	Original		PDF
Untitled Abstract: No abstract text available Text: DF2S24FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S24FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150	Original	DF2S24FS IEC61000-4-2	PDF
Untitled Abstract: No abstract text available Text: DF2S16FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150	Original	DF2S16FS IEC61000-4-2	PDF
DF2S12FS Abstract: toshiba diodes 1-1l1a Text: DF2S12FS TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S12FS Diodes for Protecting against ESD Unit: mm Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150	Original	DF2S12FS IEC61000-4-2 DF2S12FS toshiba diodes 1-1l1a	PDF
Untitled Abstract: No abstract text available Text: DF3A8.2FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2FV Diodes for Protecting against ESD Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 2 0.32±0.05 3	Original		PDF
Untitled Abstract: No abstract text available Text: DF3A6.2FV TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A6.2FV Diodes for Protecting Against ESD Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 0.4 1 2 0.32±0.05	Original		PDF
toshiba zener Abstract: No abstract text available Text: DF3A8.2LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A8.2LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range	Original		PDF
Untitled Abstract: No abstract text available Text: DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A5.6LFV Diodes for Protecting against ESD • Lead Pb - free Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range	Original		PDF
Untitled Abstract: No abstract text available Text: DF3A3.6FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.6FV Diodes for Protecting against ESD Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range 2 0.32±0.05 3	Original		PDF

POWER DIODES, TOSHIBA Search Results

POWER DIODES, TOSHIBA Result Highlights (5)

POWER DIODES, TOSHIBA Price and Stock

TE Connectivity TL1220R3BBBRG-POWER

TE Connectivity TL1220R1BBBG-POWER

TE Connectivity TL1220R2BBBOG-POWER

Thomas & Betts POWER-TOOL

TE Connectivity TL1220R2BBBRG-POWER

POWER DIODES, TOSHIBA Datasheets Context Search

reverse-conducting thyristor

1-1L1A

EQUIVALENT BYD33D

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marking AU

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DF2S16FS

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DF2S24FS

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DF2S12FS

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toshiba zener

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