power diodes with V-I characteristics
Abstract: variable power supply circuit
Text: 16. Programmable Power and Temperature-Sensing Diodes in Stratix III Devices SIII51016-1.5 Introduction The total power of an FPGA includes static power and dynamic power. Static power is the power consumed by the FPGA when it is programmed but no clocks are
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SIII51016-1
power diodes with V-I characteristics
variable power supply circuit
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NTE5700
Abstract: NTE5701 NTE5702 d 5702 1200v scr NTE5705 schematic diagram scr 10K Varistor schematic symbol for varistor vgd schematic diagram
Text: NTE5700 thru NTE5705 Industrial Power Module Description: The NTE5700 through NTE5705 series of Integrated Power Circuits consist of power thyristors and power diodes configured in a single package. Applications include power supplies, control circuits and battery chargers.
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NTE5700
NTE5705
NTE5705
NTE441A
NTE5701
NTE5702
d 5702
1200v scr
schematic diagram scr
10K Varistor
schematic symbol for varistor
vgd schematic diagram
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Cree SiC diode die
Abstract: snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet
Text: APPLICATION NOTE SiC Power Schottky Diodes in Power-Factor SiC Power Schottky Diodes in Power Factor Correction CircuitsCorrection Circuits by Ranbir Richmond BySingh Ranbir and SinghJames and James Richmond Introduction conditions; and complex EMI filtering
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200-V
CPWR-AN01,
Cree SiC diode die
snubber CIRCUITS mosfet
ixys dsei
500 watt smps circuit diagram
FULL WAVE mosfet RECTIFIER CIRCUITS
CPWR-AN01
IXYS DSEI 12-06A
Cree SiC MOSFET
4600 mosfet
6A irfp450 mosfet
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100mw laser diode INGAAs
Abstract: 100mw laser diode 980 nm laser diode 980 nm ML8624S ML8624S-01 ML8624S-02 ML8624S-03 ML8924 ML8924-01 ML8924-02
Text: MITSUBISHI LASER DIODES PRELIMINARY ML8XX4 SERIES 980nm High Power Laser Diode TYPE NAME ML8624S,ML8924 980nm High Power LD FEATURES DESCRIPTION Various Power (CW 200,150,100mW) ML8xx4 series are InGaAs/ GaAs high power laser 980nm typical emission wavelength
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980nm
ML8624S
ML8924
100mW)
980nm,
0-70degC)
100mW.
2-90deg
100mw laser diode INGAAs
100mw laser diode 980 nm
laser diode 980 nm
ML8624S-01
ML8624S-02
ML8624S-03
ML8924
ML8924-01
ML8924-02
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Fiber-Bragg-Grating
Abstract: 2 Wavelength Laser Diode laser diode 980 nm ML8922 High power laser diode 100mw laser diode INGAAs 100mw laser diode INGAAs 980 nm 100mw laser diode 980 nm
Text: MITSUBISHI LASER DIODES PRELIMINARY ML8XX2 SERIES 980nm High Power Laser Diode TYPE NAME ML8622S,ML8922 980nm High Power LD FEATURES DESCRIPTION Various Power (CW 200,150,100mW) ML8xx2 series are InGaAs/ GaAs high power laser 980nm typical emission wavelength
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980nm
ML8622S
ML8922
100mW)
980nm,
0-70degC)
100mW,
2-90deg
Fiber-Bragg-Grating
2 Wavelength Laser Diode
laser diode 980 nm
ML8922
High power laser diode
100mw laser diode INGAAs
100mw laser diode INGAAs 980 nm
100mw laser diode 980 nm
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AC-DC Controllers
Abstract: No abstract text available
Text: WHY DIODES – POWER SUPPLY 1 Why DIODES? Simple and Efficient Solutions In Power Supply Accessible Design and Applications Expertise Full System Solution Complete Power Solutions for Multiple Applications Industry-standard discretes and ICs Improve power supply efficiency
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ZXGD3100
AP37xx/39xx
AC-DC Controllers
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APT0601
Abstract: APTM100A13SCG APT0502
Text: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100A13SCG
APT0601
APTM100A13SCG
APT0502
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Untitled
Abstract: No abstract text available
Text: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100A13SCG
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reverse-conducting thyristor
Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate
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MCT00,
reverse-conducting thyristor
gto Gate Drive circuit
IGCT thyristor
IGCT mitsubishi
Usha Rectifier
Emitter Turn-Off thyristor
eto thyristor
GTO triac
HEXFET Power MOSFET designer manual
MOS-Controlled Thyristor
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SLD302V
Abstract: SLD302V-1 SLD302V-2 SLD302V-21 SLD302V-24 SLD302V-25 SLD302V-3
Text: SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 180mW
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SLD302V
200mW
SLD302V
180mW
M-248
LO-11)
SLD302V-1
SLD302V-2
SLD302V-21
SLD302V-24
SLD302V-25
SLD302V-3
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SLD302V
Abstract: SLD302V-1 SLD302V-2 SLD302V-21 SLD302V-24 SLD302V-25 SLD302V-3
Text: SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Pin Configuration
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SLD302V
200mW
SLD302V
180mW
180mW,
M-248
LO-11)
SLD302V-1
SLD302V-2
SLD302V-21
SLD302V-24
SLD302V-25
SLD302V-3
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8etho6
Abstract: 15ETH06 PFC CIRCUITS 30EPH06 30ETH06 8ETH06 PFC CIRCUIT design
Text: BOOST PFC EFFICIENCY WITH 30% LOWER POWER LOSSES 600V Hyperfast, Soft Recovery Diodes for Power Factor Correction PFC Circuits POWER LOSSES IN A 500W PFC BOOST CIRCUIT 12 Conduction Losses (W) 11 Switching Losses (W) 10 POWER DISSIPATION (W) Reduce power losses by more than 30% in continuous current mode PFC boost circuits for offline
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8ETH06*
15ETH06*
30ETH06*
30EPH06
O-220
O-247
O-262
8etho6
15ETH06
PFC CIRCUITS
30EPH06
30ETH06
8ETH06
PFC CIRCUIT design
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APT0406
Abstract: APT0501 APT0502 APTM20AM10STG
Text: APTM20AM10STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NT C2 VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM20AM10STG
APT0406
APT0501
APT0502
APTM20AM10STG
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5054
Abstract: No abstract text available
Text: SPOR30D28 TECHNICAL DATA DATA SHEET 5054, REV- ACTIVE ORING CONTROLLER MODULE DESCRIPTION In fault tolerant, redundant power distribution systems, oring power diodes are commonly used, when paralleling multiple power supplies, to prevent the occurrence of reverse current if an individual power
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SPOR30D28
5054
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SLD302V
Abstract: SLD302V-1 SLD302V-2 SLD302V-21 SLD302V-24 SLD302V-25 SLD302V-3
Text: SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current M-248 Po = 180mW
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SLD302V
200mW
SLD302V
M-248
180mW
180mW,
85isk
LO-11)
SLD302V-1
SLD302V-2
SLD302V-21
SLD302V-24
SLD302V-25
SLD302V-3
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Untitled
Abstract: No abstract text available
Text: APTM50AM38STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NT C2 VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM50AM38STG
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AP2139
Abstract: AP9101C AP22802 AP3440 AP65403
Text: DIO 4472 Why Diodes Power Management1_- 09/10/2014 01:00 Page 1 WHY DIODES – POWER MANAGEMENT1 Why DIODES? Simple and Efficient Solutions Power Management ICs Accessible Design and Applications Expertise Broad Power Management portfolio Industry-standard pin outs
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NIS5132
APM8600/1
AP7176
API9221
AP7340/1
AP9050
AP2139
AP9101C
AP2204
AP2139
AP9101C
AP22802
AP3440
AP65403
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Untitled
Abstract: No abstract text available
Text: APTM20AM10STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NT C2 VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM20AM10STG
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APT0406
Abstract: APT0501 APT0502 APTM100A23STG
Text: APTM100A23STG Phase leg Series & parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies NTC2 V BUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM100A23STG
APT0406
APT0501
APT0502
APTM100A23STG
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2 Wavelength Laser Diode
Abstract: SLD304V SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 marking PHO
Text: _ SLD304V SONY, lOOOmW High Power Laser Diode Description Package O utline Unit: mm SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output
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OCR Scan
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SLD304V
SLD304V
900mW
900mW)
2 Wavelength Laser Diode
SLD304V-1
SLD304V-2
SLD304V-21
SLD304V-3
marking PHO
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Laser Diode 1550 nm
Abstract: SLD304
Text: SLD304V SONY, lOOOmW High Power Laser Diode Package Outline Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current
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OCR Scan
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SLD304V
SLD304V
900mW
EleSLD304V
--900m
Laser Diode 1550 nm
SLD304
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Untitled
Abstract: No abstract text available
Text: SLD304V SONY, lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline
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OCR Scan
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PDF
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SLD304V
SLD304V
900mW
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Untitled
Abstract: No abstract text available
Text: SLD304V SONY» lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline
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OCR Scan
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PDF
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SLD304V
SLD304V
900mW
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SONY 171
Abstract: Sony laser
Text: SONY SLD302V 200mW High Power Laser Diode Description The SLD302V is a gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 180mW
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200mW
SLD302V
180mW,
SLD302V
180mW
SS-00259,
SS00259
net/Sonylnfo/procurementinfo/ss00259/
SONY 171
Sony laser
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