SLD302WT
Abstract: SLD302WT-1 SLD302WT-2 SLD302WT-21 SLD302WT-3
Text: SLD302WT SONY 200mW High Power Laser Diode_ |For the availability of this product, please contact the sales office^ Description SLD302W T is a gain-guided, high-power laser diode with a built-in TE cooler. Fine tuning of the wavelength is possible by controlling the laser chip
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SLD302WT
200mW
SLD302WT
180mW
SLD302WT-1
SLD302WT-2
SLD302WT-21
SLD302WT-3
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transistor 467 sgs
Abstract: 0809 al diode sg 5 ts sgs30da070
Text: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE
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O-240)
PC-029«
transistor 467 sgs
0809 al
diode sg 5 ts
sgs30da070
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH2245
32-BIT
IDTQS34XVH2245
80-Pin
34XVH2245
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH2245
32-BIT
80-Pin
34XVH2245
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
80-Pin
34XVH245
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QS34XVH2245
Abstract: No abstract text available
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH2245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH2245
32-BIT
10MHz;
80-Pin
34XVH2245
QS34XVH2245
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IDTQS34XVH2245
Abstract: QS34XVH2245
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH2245
32-BIT
10MHz;
IDTQS34XVH2245
QS34XVH2245
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IDTQS34XVH2245
Abstract: QS34XVH2245
Text: IDTQS34XVH2245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH2245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH2245
32-BIT
10MHz;
34XVH2245
80-Pin
IDTQS34XVH2245
QS34XVH2245
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
500MHz
80-Pin
34XVH245
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IDTQS34XVH245
Abstract: QS34XVH245 B1065
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
34XVH245
IDTQS34XVH245
QS34XVH245
B1065
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Untitled
Abstract: No abstract text available
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH FEATURES: IDTQS34XVH245 DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
IDTQS34XVH245
500MHz
80-Pin
34XVH245
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B29B
Abstract: IDTQS34XVH245 QS34XVH245
Text: IDTQS34XVH245 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32-BIT HIGH BANDWIDTH BUS SWITCH IDTQS34XVH245 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to VCC – Isolation under power-off conditions
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IDTQS34XVH245
32-BIT
500MHz
10MHz;
B29B
IDTQS34XVH245
QS34XVH245
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transistor 536
Abstract: CA3051 CA3050 CA3049 92CS-15430 Differential Amplifiers CA3102 92CS-J543
Text: Differential Amplifiers CA3050, CA3051 Dual Differential Amplifiers Two Darlington-Connected Differential Amplifiers with Diode Bias String For Low-Power Applications at Frequencies from DC to 20 MHz Features: • In p ut offset current - 70 nA max. » Input bias current - 500 nA max.
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CA3050,
CA3051
CA3050
CA3051
92CS-15430
92CS-J543
transistor 536
CA3049
92CS-15430
Differential Amplifiers
CA3102
92CS-J543
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1FW ST
Abstract: 1FW transistor 6DI30Z-120 M606 T151 T460 b421 diode
Text: 6DI3OZ-12O 30a ' Ê ± ^ < r7 - ^ i > 3 . - ) U W r r tiik : Outli ne Drawings POWER TRANSISTOR MODULE F e a tu re s • jâ ü i/± High Voltage • 7'J —Jj î' fl) K r t J R • A S O fr'/S i' •mmm r. Including Free Wheeling Diode i Excellent Safe Operating Area
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6DI3OZ-12O
I95t/R89
1FW ST
1FW transistor
6DI30Z-120
M606
T151
T460
b421 diode
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MONOLITHIC DIODE ARRAYS fairchild
Abstract: MA3046 vp2l DIODE IR 1F A3054 MA3036 UA3026HM MONOLITHIC DIODE ARRAYS
Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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jA3018
HA3018A.
A3019.
pA3026
MA3036
A3039
jA3045
iiA3046
A3054
jA3086
MONOLITHIC DIODE ARRAYS fairchild
MA3046
vp2l
DIODE IR 1F
A3054
UA3026HM
MONOLITHIC DIODE ARRAYS
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MONOLITHIC DIODE ARRAYS fairchild
Abstract: A3019 pa3026 PA3019 pa3046 jA3018 diode 5D A3019HM A3054 MA3036
Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS F A IR C H IL D LINEAR INTEGRATED C IR CU ITS G E N E R A L D E S C R IP T IO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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jA3018
HA3018A.
A3019.
pA3026
MA3036
A3039
jA3045
iiA3046
A3054
jA3086
MONOLITHIC DIODE ARRAYS fairchild
A3019
pa3026
PA3019
pa3046
jA3018
diode 5D
A3019HM
A3054
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Untitled
Abstract: No abstract text available
Text: I I . • I n t e r n a t io n a l I IOR Rectifier PD -5.05 7C preliminary "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK G A300TD 60U Ultra-Fast Speed IGBT F eat ur es • G en eratio n 4 IG BT te ch n o lo g y V • U ltra F a st: O p tim ize d fo r high op era ting
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A300TD
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A3054
Abstract: MA3036 MA3046 UA3026HM FAIRCHILD 02L 6 "transistor arrays" ic C3086
Text: MA3018 • JA3018A • pA3019 • mA3026 • pA3036 MA3039 • |jA3045 • pA3046 • \i A3054 • mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L DESCRIPTION — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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jA3018
HA3018A.
A3019.
pA3026
MA3036
A3039
jA3045
iiA3046
A3054
jA3086
A3054
MA3046
UA3026HM
FAIRCHILD 02L
6 "transistor arrays" ic
C3086
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A3018
Abstract: MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126
Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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jA3018
HA3018A.
A3019.
pA3026
MA3036
A3039
jA3045
iiA3046
A3054
jA3086
A3018
MONOLITHIC DIODE ARRAYS
A3054
MA3046
UA3026HM
6 "transistor arrays" ic
darlington pair power transistor
transistor 1354
SS126
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transistor ac 132
Abstract: MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic fla3019
Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ESC RIPTIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed
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jA3018
HA3018A.
A3019.
pA3026
MA3036
A3039
jA3045
iiA3046
A3054
jA3086
transistor ac 132
MONOLITHIC DIODE ARRAYS fairchild
A3018
MONOLITHIC DIODE ARRAYS
A3054
MA3046
UA3026HM
6 "transistor arrays" ic
fla3019
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ADDtek A307
Abstract: A307 A307-ADJ A307EFT-ADJ A307S a307a A307DFT-ADJ A-307A A307SFT-ADJ 7 inch lcd
Text: A307 2.0A STEP DOWN VOLTAGE REGULATOR www.addmtek.com DESCRIPTION FEATURES The A307 is a step-down switching regulator with all the required active functions, capable of driving 2A load with good line and load regulations. The device is available in fixed
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220v 5a diode bridge
Abstract: relay 10A 250V 5v relay 8 pin 220v 2a diode bridge 8 pin relay datasheet 11 pin 24 AC relay 11 pin relay 14 pin relay datasheet C3-N34 C3-r20, mr-c
Text: RELAYS MRC, QRC & IRC SERIES Application Types Poles General purpose C2-A20 C3-A30 C4-A40 C5-A20 C5-A30 C7-A10 C7-A20 C9-A41 C10-A10 8 pin 11 pin 14 pin flat blade 11 pin flat blade 11 pin flat blade 8 pin miniature flat blade 8 pin miniature flat blade 14 pin miniature flat blade
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C2-A20
C3-A30
C4-A40
C5-A20
C5-A30
C7-A10
C7-A20
C9-A41
C10-A10
C2-T21
220v 5a diode bridge
relay 10A 250V
5v relay 8 pin
220v 2a diode bridge
8 pin relay datasheet
11 pin 24 AC relay
11 pin relay
14 pin relay datasheet
C3-N34
C3-r20, mr-c
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A307SGT-ADJ
Abstract: A307SGT A307-ADJ A307 ADDtek A307 A307EFT-ADJ step down Voltage Regulator AMC431 a307a
Text: A307 2.0A STEP DOWN VOLTAGE REGULATOR www.addmtek.com DESCRIPTION FEATURES The A307 is a step-down switching regulator with all the required active functions, capable of driving 2A load with good line and load regulations. The device is available in fixed
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DD083_
A307SGT-ADJ
A307SGT
A307-ADJ
A307
ADDtek A307
A307EFT-ADJ
step down Voltage Regulator
AMC431
a307a
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transistor LIC
Abstract: a3045 3086 A3054 MA3036 MA3046 UA3026HM C3086 6 "transistor arrays" ic MONOLITHIC DIODE ARRAYS
Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCH ILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R I P T I O N — F a irc h ild T ransistor and D io d e A rra y s co nsist o f general purpose integrated c irc u it devices constructed
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jA3018
HA3018A.
A3019.
pA3026
MA3036
A3039
jA3045
iiA3046
A3054
jA3086
transistor LIC
a3045
3086
A3054
MA3046
UA3026HM
C3086
6 "transistor arrays" ic
MONOLITHIC DIODE ARRAYS
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