BU4508DF
Abstract: power TRANSISTOR 800V 5A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4508DF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU4508DF
100mA;
600mA;
BU4508DF
power TRANSISTOR 800V 5A
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Untitled
Abstract: No abstract text available
Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω
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IXFA10N80P
IXFP10N80P
IXFQ10N80P
IXFH10N80P
O-220AB
O-263
250ns
O-247
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EE-25 transformer
Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Text: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS
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APT30D100B
APT30D90B
APT30D80B
O-247
O-247AD
EE-25 transformer
Transformer EE-25
Transformer EE-25 100
EE-25 200 6 transformer
CR diode transient
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DS800
Abstract: 2SK2397-01MR
Text: F U JI nuMEirijajG 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3 a 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications
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2SK2397-01MR
20Ki2)
DS800
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PDF
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power Diode 800V 5A
Abstract: 2SK2397-01MR
Text: 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3Ω 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2397-01MR
power Diode 800V 5A
2SK2397-01MR
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Untitled
Abstract: No abstract text available
Text: 2SK2397-01MR N-channel MOS-FET FAP-II Series 800V > Features - 2,3Ω 5A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2397-01MR
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Untitled
Abstract: No abstract text available
Text: ASSESS? RURH1570CC, RURH1580CC, RURH1590CC, RURH15100CC 1 5A, 700V - 1000V U ltrafast Dual Diodes ¡11995 Features Package • U Itrafast with Soft Recovery. <100ns JEDEC TO-218AC • Operating Temperature. . . +175 C • Reverse Voltage Up t o . . . .
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RURH1570CC,
RURH1580CC,
RURH1590CC,
RURH15100CC
100ns
O-218AC
RURH1590CC
RURH15100CC
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Untitled
Abstract: No abstract text available
Text: F U J I [M Ü J M e u M ] ü ¡ N-channel MOS-FET 2 S K 2 3 9 7 -0 1 M R FAP-II Series 800V 2,3£2 5A 50 W > Outline Drawing > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - Vgs = ± 30V Guarantee
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diode 1000V 10a
Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A
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O-220AB
O-220AB
750ns
BU407
BUV28
BUV28A
BUV27
BUV27A
diode 1000V 10a
200v 1.5v 3a diode
TO-220aB 11A
diode 6A 1000v
DIODE 2A 400V
TO-220aB rr
4045AV
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APT4M120K
Abstract: MIC4452
Text: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT4M120K
O-220
APT4M120K
MIC4452
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power Diode 800V 5A
Abstract: diode 5A 800V
Text: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability
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ERC20M
SC-67
ERC20M
power Diode 800V 5A
diode 5A 800V
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Untitled
Abstract: No abstract text available
Text: APT4M120K 1200V, 5A, 3.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT4M120K
O-220
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power Diode 800V 5A
Abstract: No abstract text available
Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ
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ERC20
O-220AB
SC-46
ERC20
power Diode 800V 5A
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ERC20M
Abstract: No abstract text available
Text: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability
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ERC20M
SC-67
ERC20M
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ERC20
Abstract: No abstract text available
Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ
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ERC20
O-220AB
SC-46
ERC20
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5n80
Abstract: SMPS 30v
Text: UNISONIC TECHNOLOGIES CO., LTD 5N80 Preliminary Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge.
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QW-R502-483
5n80
SMPS 30v
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ERC20
Abstract: No abstract text available
Text: ERC20 5A ( 200V to 800V / 5A ) FAST RECOVERY DIODE Outline drawings, mm 4.5±0.2 Ø3.6+0.2 -0.1 1.32 1 15.0±0.2 6.4 2.7 10.0+0.5 -0 3.7 2 14.0+0-0.5 1.2 0.8±0.2 5.08 0.4+0.2 -0 2.7 Features High voltage by mesa design High reliability JEDEC TO-220AB EIAJ
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ERC20
O-220AB
SC-46
ERC20
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power Diode 800V 5A
Abstract: ERC20M
Text: ERC20M 5A ( 200V to 800V / 5A ) Outline drawings, mm FAST RECOVERY DIODE 4.5MAX. Ø3.2+0.2 -0.1 10.5MAX. 2.0 17.0±0.3 4.7 6.0 3 3.7 1 13.0MAX. 1.2 0.8 5.08 Features Insulated package fully molding High voltage by mesa design 2.7 0.4 JEDEC EIAJ High reliability
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ERC20M
SC-67
ERC20M
power Diode 800V 5A
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5n80
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N80 Power MOSFET 5A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N80 is a N-channel enhancement mode power MOSFET. It use UTC advanced technology to provide avalanche rugged technology and low gate charge. It can be applied in high current, high speed switching, switch
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5N80L-TA3-T
QW-R502-483
5n80
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YG226S8
Abstract: power Diode 800V 5A Diode 800V 5A 5A 800V
Text: YG226S8 5A (800V / 5A) Outline drawings, mm FAST RECOVERY DIODE 4.5±0.2 +0.2 10.5±0.5 ø3.2 -0.1 15±0.3 2.7±0.2 6.3 2.7±0.2 3 1 13Min 3.7±0.2 1.2±0.2 Features 0.7±0.2 0.6±0.2 2.7±0.2 Insulated package by fully molding High voltage by mesa design
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YG226S8
13Min
SC-67
YG226S8
power Diode 800V 5A
Diode 800V 5A
5A 800V
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Untitled
Abstract: No abstract text available
Text: S6301 Data Sheet SiC Schottky Barrier Diode Bare Die VR 1200V IF 5A*1 17nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
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S6301
R1102B
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IKW03N120H2
Abstract: k03h1202 smps* ZVT 15v 60w smps Electronic ballast 220 v 40W IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 IKW03N120H2 K03H1202
Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
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IKP03N120H2
IKW03N120H2
PG-TO-247-3
PG-TO-220-3-1
K03H120nces.
IKW03N120H2
k03h1202
smps* ZVT
15v 60w smps
Electronic ballast 220 v 40W
IKP03N120H2
PG-TO-220-3-1
PG-TO-247-3
PG-TO-247-3-21
IKW03N120H2 K03H1202
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smps* ZVT
Abstract: smps 10w 5V IKB01N120H2 IKP01N120H2 smps 10w 12V
Text: IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology
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IKB01N120H2
P-TO-220-3-45
smps* ZVT
smps 10w 5V
IKB01N120H2
IKP01N120H2
smps 10w 12V
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Untitled
Abstract: No abstract text available
Text: IKB01N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies G E nd 2 generation HighSpeed-Technology
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IKB01N120H2
P-TO-220-3-45
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