TC.. 12A MOSFET Drivers
Abstract: APT22F80B APT22F80S MIC4452
Text: APT22F80B APT22F80S 800V, 22A, 0.50Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT22F80B
APT22F80S
260ns
TC.. 12A MOSFET Drivers
APT22F80B
APT22F80S
MIC4452
|
Untitled
Abstract: No abstract text available
Text: APT22F80B APT22F80S 800V, 22A, 0.50Ω Max, trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT22F80B
APT22F80S
260ns
|
Untitled
Abstract: No abstract text available
Text: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT22F80B
APT22F80S
260ns
APT22F80B
AP250
|
APT22F80B
Abstract: APT22F80S MIC4452 two switch forward converter
Text: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT22F80B
APT22F80S
260ns
APT22F80B
APT22F80S
MIC4452
two switch forward converter
|
Untitled
Abstract: No abstract text available
Text: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft
|
Original
|
PDF
|
APT22F80B
APT22F80S
260ns
|
APT1201R2BFLL
Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
Text: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
|
Original
|
PDF
|
APT1201R2BFLL
APT1201R2SFLL
O-247
O-247
APT1201R2BFLLG
1400G
|
APT1201R2BFLL
Abstract: APT1201R2SFLL
Text: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
PDF
|
APT1201R2BFLL
APT1201R2SFLL
O-247
O-247
APT1201R2BFLL
APT1201R2SFLL
|
APT1201R2BFLL
Abstract: No abstract text available
Text: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
|
Original
|
PDF
|
APT1201R2BFLL
APT1201R2SFLL
O-247
O-247
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
|
Original
|
PDF
|
12N80
O-220
12N80
O-220F1
QW-R502-594
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
|
Original
|
PDF
|
12N80
O-220
12N80
O-220F1
O-220F2
QW-R502-594
|
"12n80"
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
|
Original
|
PDF
|
12N80
12N80
QW-R502-594
"12n80"
|
12n80
Abstract: "12n80"
Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in
|
Original
|
PDF
|
12N80
O-220
12N80
O-220F1
O-220
QW-R502-594
"12n80"
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
|
Original
|
PDF
|
12N80
12N80
12N80L-T47-T
QW-R502-594
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
|
Original
|
PDF
|
12N80
12N80
QW-R502-594
|
|
|
IKW03N120H2
Abstract: k03h1202 smps* ZVT 15v 60w smps Electronic ballast 220 v 40W IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 IKW03N120H2 K03H1202
Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
|
Original
|
PDF
|
IKP03N120H2
IKW03N120H2
PG-TO-247-3
PG-TO-220-3-1
K03H120nces.
IKW03N120H2
k03h1202
smps* ZVT
15v 60w smps
Electronic ballast 220 v 40W
IKP03N120H2
PG-TO-220-3-1
PG-TO-247-3
PG-TO-247-3-21
IKW03N120H2 K03H1202
|
Untitled
Abstract: No abstract text available
Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
|
Original
|
PDF
|
IKB03N120H2
K03H1202
P-TO-220-3-45
IKB03N120H2
|
Untitled
Abstract: No abstract text available
Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
|
Original
|
PDF
|
IKB03N120H2
K03N1202
P-TO-263-3-2
O-263AB)
IKB03N120H2
Q67040-S4597
|
Untitled
Abstract: No abstract text available
Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
|
Original
|
PDF
|
IKB03N120H2
K03H1202
PG-TO263-3-2
IKB03N120H2
|
Untitled
Abstract: No abstract text available
Text: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
|
Original
|
PDF
|
IKB03N120H2
P-TO-220-3-45
K03H1202
|
RG-2A Diode
Abstract: PG-TO-247-3 K03N1202 3V10A
Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
|
Original
|
PDF
|
IKP03N120H2
IKW03N120H2
K03N1202
PG-TO-247-3-1
O-247AC)
PG-TO-220-3-1
O-220AB)
RG-2A Diode
PG-TO-247-3
3V10A
|
k03h1202
Abstract: 05852 IKW03N120H2 15v 60w smps
Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
|
Original
|
PDF
|
IKP03N120H2
IKW03N120H2
K03H1202
PG-TO-247-3-21
PG-TO-220-3-1
PG-TO-247-3-21
05852
IKW03N120H2
15v 60w smps
|
K03H1202
Abstract: 05852 k03h120 k03h12 15v 60w smps DIODE 3A 1000V IKW03N120H2 IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3-21
Text: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits
|
Original
|
PDF
|
IKP03N120H2
IKW03N120H2
PG-TO-247-3-21
PG-TO-220-3-1
K03H1202
05852
k03h120
k03h12
15v 60w smps
DIODE 3A 1000V
IKW03N120H2
IKP03N120H2
PG-TO-220-3-1
PG-TO-247-3-21
|
diode 1000V 10a
Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A
|
OCR Scan
|
PDF
|
O-220AB
O-220AB
750ns
BU407
BUV28
BUV28A
BUV27
BUV27A
diode 1000V 10a
200v 1.5v 3a diode
TO-220aB 11A
diode 6A 1000v
DIODE 2A 400V
TO-220aB rr
4045AV
|
BUS11A PHILIPS SEMICONDUCTOR
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV
|
OCR Scan
|
PDF
|
Q01b22Q
32-0t
OT-93
BUV90
BUV90F
OT-199
ESM3045AV
3045DV
ESM4045AV
BUS11A PHILIPS SEMICONDUCTOR
|
