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    POWER DIODE Search Results

    POWER DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    POWER DIODE Price and Stock

    IXYS Corporation DSA1-12D

    Small Signal Switching Diodes 1 Amps 1200V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI DSA1-12D Box 100
    • 1 -
    • 10 -
    • 100 $2.81
    • 1000 $2.68
    • 10000 $2.57
    		Buy Now

    IXYS Corporation DSA1-16D

    Small Signal Switching Diodes 1 Amps 1600V 1600V 1A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI DSA1-16D Box 100
    • 1 -
    • 10 -
    • 100 $2.71
    • 1000 $2.5
    • 10000 $2.5
    		Buy Now

    IXYS Corporation DSA1-18D

    Small Signal Switching Diodes 1800V 2.3A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI DSA1-18D Box 100
    • 1 -
    • 10 -
    • 100 $2.75
    • 1000 $2.5
    • 10000 $2.5
    		Buy Now

    POWER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 16. Programmable Power and Temperature Sensing Diode in Stratix III Devices SIII51016-1.1 Introduction The total power of an FPGA includes static power and dynamic power. Static power is the power consumed by the FPGA when it is programmed but no clocks are operating, while dynamic power is comprised of the


    Original     		PDF SIII51016-1

    power diodes with V-I characteristics

    Abstract: variable power supply circuit
    Text: 16. Programmable Power and Temperature-Sensing Diodes in Stratix III Devices SIII51016-1.5 Introduction The total power of an FPGA includes static power and dynamic power. Static power is the power consumed by the FPGA when it is programmed but no clocks are


    Original     		PDF SIII51016-1 power diodes with V-I characteristics variable power supply circuit

    NTE5700

    Abstract: NTE5701 NTE5702 d 5702 1200v scr NTE5705 schematic diagram scr 10K Varistor schematic symbol for varistor vgd schematic diagram
    Text: NTE5700 thru NTE5705 Industrial Power Module Description: The NTE5700 through NTE5705 series of Integrated Power Circuits consist of power thyristors and power diodes configured in a single package. Applications include power supplies, control circuits and battery chargers.


    Original     		PDF NTE5700 NTE5705 NTE5705 NTE441A NTE5701 NTE5702 d 5702 1200v scr schematic diagram scr 10K Varistor schematic symbol for varistor vgd schematic diagram

    SE 7889

    Abstract: peltier cooler Peltier module L8413 LLD1007E01 AL7 1BW
    Text: HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 HIGH POWER CW LASER DIODE with PELTIER-COOLING L8413 Figure 1: Radiant Output Power vs. Forward Current Typ. Figure 2: Typical Emission Spectrum 100 RELATIVE RADIANT OUTPUT POWER (%) 30 Top=25℃ RADIANT OUTPUT POWER (W)


    Original     		PDF L8413 SE-171-41 LLD1007E01 SE 7889 peltier cooler Peltier module L8413 LLD1007E01 AL7 1BW

    L8411

    Abstract: LLD1008E01
    Text: HIGH POWER QUASI-CW LASER DIODE L8411 Figure 1: Radiant Output Power vs. Forward Current Figure 2: Radiant Output Power vs. Forward Current 100 120 Pulse Duration=200 s Frequency=1KHz RADIANT OUTPUT POWER W Pulse Duration=200μs Frequency=50Hz RADIANT OUTPUT POWER (W)


    Original     		PDF L8411 00W/bar SE-171-41 LLD1008E01 L8411 LLD1008E01

    Cree SiC diode die

    Abstract: snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet
    Text: APPLICATION NOTE SiC Power Schottky Diodes in Power-Factor SiC Power Schottky Diodes in Power Factor Correction CircuitsCorrection Circuits by Ranbir Richmond BySingh Ranbir and SinghJames and James Richmond Introduction conditions; and complex EMI filtering


    Original     		PDF 200-V CPWR-AN01, Cree SiC diode die snubber CIRCUITS mosfet ixys dsei 500 watt smps circuit diagram FULL WAVE mosfet RECTIFIER CIRCUITS CPWR-AN01 IXYS DSEI 12-06A Cree SiC MOSFET 4600 mosfet 6A irfp450 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Power Management in Stratix V Devices 11 2013.05.06 SV51013 Subscribe Feedback This chapter describes the programmable power technology, hot-socketing feature, power-on reset POR requirements, power-up sequencing recommendation, temperature sensing diode (TSD), and their


    Original     		PDF SV51013

    100mw laser diode INGAAs

    Abstract: 100mw laser diode 980 nm laser diode 980 nm ML8624S ML8624S-01 ML8624S-02 ML8624S-03 ML8924 ML8924-01 ML8924-02
    Text: MITSUBISHI LASER DIODES PRELIMINARY ML8XX4 SERIES 980nm High Power Laser Diode TYPE NAME ML8624S,ML8924 980nm High Power LD FEATURES DESCRIPTION Various Power (CW 200,150,100mW) ML8xx4 series are InGaAs/ GaAs high power laser 980nm typical emission wavelength


    Original     		PDF 980nm ML8624S ML8924 100mW) 980nm, 0-70degC) 100mW. 2-90deg 100mw laser diode INGAAs 100mw laser diode 980 nm laser diode 980 nm ML8624S-01 ML8624S-02 ML8624S-03 ML8924 ML8924-01 ML8924-02

    Fiber-Bragg-Grating

    Abstract: 2 Wavelength Laser Diode laser diode 980 nm ML8922 High power laser diode 100mw laser diode INGAAs 100mw laser diode INGAAs 980 nm 100mw laser diode 980 nm
    Text: MITSUBISHI LASER DIODES PRELIMINARY ML8XX2 SERIES 980nm High Power Laser Diode TYPE NAME ML8622S,ML8922 980nm High Power LD FEATURES DESCRIPTION Various Power (CW 200,150,100mW) ML8xx2 series are InGaAs/ GaAs high power laser 980nm typical emission wavelength


    Original     		PDF 980nm ML8622S ML8922 100mW) 980nm, 0-70degC) 100mW, 2-90deg Fiber-Bragg-Grating 2 Wavelength Laser Diode laser diode 980 nm ML8922 High power laser diode 100mw laser diode INGAAs 100mw laser diode INGAAs 980 nm 100mw laser diode 980 nm

    150C1K

    Abstract: SMA-FL
    Text: MBRAF1100T3G Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRAF1100T3G MBRAF1100T3/D 150C1K SMA-FL

    AC-DC Controllers

    Abstract: No abstract text available
    Text: WHY DIODES – POWER SUPPLY 1 Why DIODES? Simple and Efficient Solutions In Power Supply Accessible Design and Applications Expertise Full System Solution Complete Power Solutions for Multiple Applications Industry-standard discretes and ICs Improve power supply efficiency


    Original     		PDF ZXGD3100 AP37xx/39xx AC-DC Controllers

    b8h100g

    Abstract: MBRB8H100T4G
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D b8h100g MBRB8H100T4G

    SLD104U

    Abstract: SLD104AU SLD-104U M259
    Text: SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the SLD104U, this device attains even lower power consumption levels. Features • Low power consumption • Single power supply


    Original     		PDF SLD104AU SLD104AU SLD104U, M-259 SLD104U SLD-104U M259

    SLD301V-1

    Abstract: 1w laser diode 830 nm SLD301V SLD301V-2 SLD301V-21 SLD301V-24 SLD301V-25 SLD301V-3
    Text: SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Pin Configuration


    Original     		PDF SLD301V 100mW SLD301V M-248 LO-11) SLD301V-1 1w laser diode 830 nm SLD301V-2 SLD301V-21 SLD301V-24 SLD301V-25 SLD301V-3

    APT0601

    Abstract: APTM100A13SCG APT0502
    Text: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


    Original     		PDF APTM100A13SCG APT0601 APTM100A13SCG APT0502

    SLD104U

    Abstract: SLD104AU SLD104U equivalent C6802 IEC60825-1 AlGaAs laser diode low noise, 780 nm, 7 mw low noise, 780 nm, 5.6 mm, 5 mw
    Text: SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the SLD104U, this device attains even lower power consumption levels. Features • Low power consumption • Single power supply


    Original     		PDF SLD104AU SLD104AU SLD104U, M-259 SLD104U SLD104U equivalent C6802 IEC60825-1 AlGaAs laser diode low noise, 780 nm, 7 mw low noise, 780 nm, 5.6 mm, 5 mw

    SiC POWER MOSFET

    Abstract: sic MOSFET APTMC60TLM14CAG
    Text: APTMC60TLM14CAG Three level inverter SiC MOSFET Power Module SiC Power MOSFET : VDSS = 1200V ; RDSon = 14mΩ @ Tj = 25°C Application • Uninterruptible Power Supplies Features • SiC Power MOSFET - Low RDS on - High temperature performance • SiC Schottky Diode


    Original     		PDF APTMC60TLM14CAG SiC POWER MOSFET sic MOSFET APTMC60TLM14CAG

    Untitled

    Abstract: No abstract text available
    Text: APTM100A13SCG Phase leg Series & SiC parallel diodes MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies VBUS Q1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance


    Original     		PDF APTM100A13SCG

    b8h100g

    Abstract: No abstract text available
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D b8h100g

    reverse-conducting thyristor

    Abstract: gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor
    Text: I Power Electronic Devices 1 Power Electronics Kaushik Rajashekara, Sohail Anwar, Vrej Barkhordarian, Alex Q. Huang Overview • Diodes • Schottky Diodes • Thyristors • Power Bipolar Junction Transistors • MOSFETs • General Power Semiconductor Switch Requirements • Gate


    Original     		PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor IGCT mitsubishi Usha Rectifier Emitter Turn-Off thyristor eto thyristor GTO triac HEXFET Power MOSFET designer manual MOS-Controlled Thyristor

    B8H100G

    Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
    Text: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB8H100T4G MBRB8H100/D B8H100G B8H100 MBRB8H100T4G B8H1 C146C marking 146C

    2 Wavelength Laser Diode

    Abstract: SLD304V SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 marking PHO
    Text: _ SLD304V SONY, lOOOmW High Power Laser Diode Description Package O utline Unit: mm SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output


    OCR Scan     		PDF SLD304V SLD304V 900mW 900mW) 2 Wavelength Laser Diode SLD304V-1 SLD304V-2 SLD304V-21 SLD304V-3 marking PHO

    Laser Diode 1550 nm

    Abstract: SLD304
    Text: SLD304V SONY, lOOOmW High Power Laser Diode Package Outline Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current


    OCR Scan     		PDF SLD304V SLD304V 900mW EleSLD304V --900m Laser Diode 1550 nm SLD304

    Untitled

    Abstract: No abstract text available
    Text: SLD304V SONY, lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline


    OCR Scan     		PDF SLD304V SLD304V 900mW