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    POWER DARLINGTON SCHEMATIC Search Results

    POWER DARLINGTON SCHEMATIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER DARLINGTON SCHEMATIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6388

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration


    Original     		PDF 2N6388 O-220 O-220 P011C 2N6388

    2N6388

    Abstract: No abstract text available
    Text: 2N6388  SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration


    Original     		PDF 2N6388 O-220 O-220 2N6388

    TIP147T

    Abstract: tip142t
    Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n n n n n SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN DESCRIPTION The TIP142T is a silicon epitaxial-base NPN power transistors in monolithic Darlington


    Original     		PDF TIP142T TIP147T O-220 TIP147T. O-220 TIP147T

    2N6388

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration


    Original     		PDF 2N6388 O-220 O-220 2N6388

    2N6388

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration


    Original     		PDF 2N6388 O-220 O-220 2N6388

    TIP147T

    Abstract: TIP142T
    Text: TIP142T TIP147T COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES MONOLITHIC DARLINGTON CONFIGURATION LOW VOLTAGE HIGH CURRENT HIGH GAIN DESCRIPTION The TIP142T is a silicon epitaxial-base NPN power transistors in monolithic Darlington


    Original     		PDF TIP142T TIP147T TIP142T O-220 TIP147T. O-220 TIP147T

    BU323Z

    Abstract: free ic 555 BU323Z-D transistor ignition circuit
    Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is


    Original     		PDF BU323Z BU323Z BU323Z/D free ic 555 BU323Z-D transistor ignition circuit

    BU323Z

    Abstract: No abstract text available
    Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is


    Original     		PDF BU323Z BU323Z BU323Z/D

    BU323Z

    Abstract: HIGH ENERGY IGNITION CIRCUIT darlington transistor with built-in temperature c
    Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is


    Original     		PDF BU323Z BU323Z r14525 BU323Z/D HIGH ENERGY IGNITION CIRCUIT darlington transistor with built-in temperature c

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors
    Text: MJ11015, 11016 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain hFE = 1000 Minimum at IC = 20A.


    Original     		PDF MJ11015, MJ11015 MJ11016 pin diagram of ic 4066 ic tc 4066 diagram MJ11015 darlington complementary 120v npn darlington transistor 200 watts MJ11016 MJ11015-11016 11016 Darlington npn 2 amp 60 amp npn darlington power transistors

    BU323Z

    Abstract: No abstract text available
    Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is


    Original     		PDF BU323Z BU323Z r14525 BU323Z/D

    RBE 215 RELAY

    Abstract: bu323z
    Text: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is


    Original     		PDF BU323Z RBE 215 RELAY

    MJ10009

    Abstract: 1N4937 2N3762 MTP3055E
    Text: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,


    Original     		PDF MJ10009 MJ10009 r14525 MJ10009/D 1N4937 2N3762 MTP3055E

    pin diagram of ic 4066

    Abstract: ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent
    Text: MJ11032, 11033 Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: • High Gain Darlington performance. • High DC Current Gain: hFE = 1000 Minimum at IC = 25A,


    Original     		PDF MJ11032, pin diagram of ic 4066 ic tc 4066 diagram 100 amp npn darlington power transistors MJ11032 transistor MJ11032 60 amp npn darlington power transistors 10 amp npn darlington power transistors 5 amp npn darlington power transistors MJ11033 transistor mj11032 equivalent

    Untitled

    Abstract: No abstract text available
    Text: TIP142T TIP147T Complementary power Darlington transistors Features • Monolithic Darlington configuration ■ Integrated antiparallel collector-emitter diode TAB Application ■ Linear and switching industrial equipment 1 Description Figure 1. Internal schematic diagrams


    Original     		PDF TIP142T TIP147T O-220

    TIP132

    Abstract: TIP131G TIP131 TIP132G TIP137 TIP137G
    Text: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF TIP131, TIP132 TIP137 TIP131 TIP132, TIP131/D TIP132 TIP131G TIP131 TIP132G TIP137 TIP137G

    SILICON COMPLEMENTARY transistors darlington

    Abstract: darlington complementary power amplifier TO-220 AYWW marking code IC DARLINGTON MANUAL tip131 schematic diagram 800 watt power amplifier TIP137G TIP131G TIP132
    Text: TIP131, TIP132 NPN , TIP137 (PNP) Preferred Devices Darlington Complementary Silicon Power Transistors Designed for general-purpose amplifier and low-speed switching applications. http://onsemi.com Features DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF TIP131, TIP132 TIP137 TIP131 TIP132, O-220AB TIP131/D SILICON COMPLEMENTARY transistors darlington darlington complementary power amplifier TO-220 AYWW marking code IC DARLINGTON MANUAL tip131 schematic diagram 800 watt power amplifier TIP137G TIP131G TIP132

    fw26025

    Abstract: FW26025A fw26025a1 fw26025a1 equivalent MALAYSIA FW26025A1 parameters FW26025A1 st fw26025a1 fw26025a1 "transistor" transistor fw26025a1 ic 351
    Text: FW26025A1 PNP POWER DARLINGTON TRANSISTOR • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington


    Original     		PDF FW26025A1 FW26025A1 fw26025 FW26025A fw26025a1 equivalent MALAYSIA FW26025A1 parameters FW26025A1 st fw26025a1 fw26025a1 "transistor" transistor fw26025a1 ic 351

    35N04G

    Abstract: NJD35N04G
    Text: NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G NPN Darlington Power Transistor This high voltage power Darlington has been specifically designed for inductive applications such as Electronic Ignition, Switching Regulators and Motor Control. Features •   


    Original     		PDF NJD35N04G, NJVNJD35N04G, NJVNJD35N04T4G AEC-Q101 NJD35N04/D 35N04G NJD35N04G

    Untitled

    Abstract: No abstract text available
    Text: BD777 Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors designed for general purpose amplifier and high−speed switching applications. http://onsemi.com • High DC Current Gain • • •


    Original     		PDF BD777 BD776 BD777, BD780 BD777/D

    fw26025

    Abstract: FW26025A FW26025A1 st fw26025a1 MALAYSIA FW26025A1 fw26025a1 "transistor" fw26025a1 equivalent transistor fw26025a1 parameters FW26025A1 P003F
    Text: FW26025A1 PNP POWER DARLINGTON TRANSISTOR • INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington


    Original     		PDF FW26025A1 FW26025A1 fw26025 FW26025A st fw26025a1 MALAYSIA FW26025A1 fw26025a1 "transistor" fw26025a1 equivalent transistor fw26025a1 parameters FW26025A1 P003F

    Untitled

    Abstract: No abstract text available
    Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration


    OCR Scan     		PDF 2N6388 O-220

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration


    OCR Scan     		PDF MJE802 MJE802 OT-32 GC73280 OT-32 O-126)

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON SGS125 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The SGS125 is a silicon epitaxial-base PNP transistor in monolithic Darlington configuration in


    OCR Scan     		PDF SGS125 SGS125 OT-82