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    POWER CONSUMPTION OF FCBGA Search Results

    POWER CONSUMPTION OF FCBGA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    POWER CONSUMPTION OF FCBGA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Flow for Calculating Power Consumption Estimating total power consumption of chip Note 1 Changing package or circuit NG Is allowable power consumption of package satisfied? OK Changing frequency or circuit NG Is internal power consumption limit satisfied? Note 2


    Original     		PDF VDD15/GND VDD15/GND PD66205,

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06–20212–2E Semicustom CMOS Standard Cell CS302 Series • DESCRIPTION The CS302 series of 40 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption, higher speed and higher integration.


    Original     		PDF CS302 CS201

    CS251

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS601-00003-0v01-E Semicustom CMOS Standard Cell CS251 Series • DESCRIPTION The CS251 series of 55 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption, higher speed and higher integration.


    Original     		PDF DS601-00003-0v01-E CS251 CS201

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS601-00001-2v0-E Semicustom CMOS Standard Cell CS401 Series • DESCRIPTION The CS401 series of 28 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption, higher speed and higher integration.


    Original     		PDF DS601-00001-2v0-E CS401 CS302

    CS81

    Abstract: DS06-20206-1E 3813K 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		PDF DS06-20206-1E CS81 DS06-20206-1E 3813K 0.18-um CMOS standard cell library inverter

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS601-00002-0v01-E Semicustom CMOS Standard Cell CS402 Series • DESCRIPTION The CS402 series of 28 nm standard cells is a line of CMOS ASICs of high-performance with minimum power consumption. By the adoption of core transistors with high current drivability operating at low voltages, the operating


    Original     		PDF DS601-00002-0v01-E CS402 CS401

    F0706

    Abstract: MoSys CS201 MoSys 1T sram "Single-Port RAM"
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20211-1E Semicustom CMOS Standard Cell CS201 Series • DESCRIPTION The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor


    Original     		PDF DS06-20211-1E CS201 F0706 F0706 MoSys MoSys 1T sram "Single-Port RAM"

    f9906

    Abstract: xl 1225 CE81 Fujitsu inverter 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		PDF DS06-20110-1E f9906 xl 1225 CE81 Fujitsu inverter 0.18-um CMOS standard cell library inverter

    DS06-20206-1E

    Abstract: xl 1225 transistor CS81 0.18-um CMOS standard cell library inverter
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		PDF DS06-20206-1E DS06-20206-1E xl 1225 transistor CS81 0.18-um CMOS standard cell library inverter

    DS06-20112-1E

    Abstract: CE77 register file 0.25-um standard cell library
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		PDF DS06-20112-1E DS06-20112-1E CE77 register file 0.25-um standard cell library

    DS06-20112-1E

    Abstract: CE77
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		PDF DS06-20112-1E F0204 DS06-20112-1E CE77

    f9906

    Abstract: CE81 0.18-um CMOS standard cell library inverter
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    Original     		PDF DS06-20110-1E f9906 CE81 0.18-um CMOS standard cell library inverter

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06–20211–3E Semicustom CMOS Standard Cell CS201 Series • DESCRIPTION The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor industry, and are able to implement a mixture of core transistors with three different threshold voltages,


    Original     		PDF CS201

    CS91

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20208-3Ea Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


    Original     		PDF DS06-20208-3Ea CS91

    CS91

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16


    Original     		PDF DS06-20208-1E F0207 CS91

    CS81

    Abstract: 0.18-um CMOS standard cell library inverter
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-5E Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration


    Original     		PDF DS06-20206-5E 15ces F0703 CS81 0.18-um CMOS standard cell library inverter

    CS81

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20206-5Ea Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration


    Original     		PDF DS06-20206-5Ea CS81

    ARM1176JZF-S

    Abstract: ARM1176JZF 90 nm CMOS CS101 ARM1176 fujitsu inverter air "Single-Port RAM"
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20210-3Ea Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three


    Original     		PDF DS06-20210-3Ea CS101 ARM1176JZF-S ARM1176JZF 90 nm CMOS ARM1176 fujitsu inverter air "Single-Port RAM"

    f0602

    Abstract: CS101 "Single-Port RAM"
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20210-2E Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three


    Original     		PDF DS06-20210-2E CS101 F0602 f0602 "Single-Port RAM"

    usb schema

    Abstract: schema sata data to usb CB-55 fcbg nec cb core
    Text: CB-55 55 nm Features >> 55 nm technology >> Up to 7 metal layers >> Very high gate count: 200 million gates raw >> 1.0 and 1.2 V core voltage optimized architecture >> Extremely low power consumption down to 0.29 nW/MHz/gate >> Extremely low leakage current using high-k transistors over silicon


    Original     		PDF CB-55 CB-55 usb schema schema sata data to usb fcbg nec cb core

    cb-90 nec

    Abstract: edram nec 90 nm CMOS NEC 426 nec cb core NEC Electronics America
    Text: CB-90 90 nm >> 90 nm technology >> Up to 9 metal layers >> Very high speed >> Gate count up to 100 million gates >> 1.0 V core voltage >> Power consumption down to 0.51 nW/MHz/gate >> I/O voltage options: 1.8 V, 2.5 V, 3.3 V >> F lexible I/O structure supports USB,


    Original     		PDF CB-90 CB-90 A19184EE1V1PL00 cb-90 nec edram nec 90 nm CMOS NEC 426 nec cb core NEC Electronics America

    VT1620A

    Abstract: vt1723 vt6113 VT1724 VT1730 VIA VT1620A VT1708S VT1620 VT1610 vt6210l
    Text: Vol. 2009 Issue 1 Compact Ultra small form factor and rich integration enabling rapid development of intelligent devices Efficient Fanless Flexible Advanced processor architecture and platform-centric design for higher performance-per-watt Industry-leading low power,


    Original     		PDF

    1EEE1394

    Abstract: rom multiplier CS81
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 Am CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    OCR Scan     		PDF

    1EEE1394

    Abstract: H 735 b1369 xl 1225 CE81
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 Am CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.


    OCR Scan     		PDF