POWER TRANSISTORS
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors Back to Bipolar Power Transistors
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tip122 tip127 audio board
Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Text: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents
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Power247TM,
tip122 tip127 audio board
BUK 450-1000
Transistor Selection Guide
tip122 tip127 audio amp
FJL6920 equivalent
car amp
TIP41/TIP42
kse13009
TRANSISTOR TIP31
FJL6920
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cfl low loss drive
Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT
Text: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer
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vol92
OT186A
O220AB
OT428)
cfl low loss drive
phe13009
transistor BUJ100
DIMMER
BUJ100
PHE13007
high power bipolar transistor selection
Electronic ignitors for HID lamp circuits
High power planar Transformer
transistor BUT
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004L
TTC4116*
2SC4118
TTA1586*
2SA1588
2SC4117
2SA1587
2SC5233
2SC4738
2SA1832
GT30F131
GT30F124
TK18A60V
smd m5 transistor 6-pin
SMD TRANSISTOR H2A NPN
GT50N322
MARKING SMD PNP TRANSISTOR h2a
GT30J124
*30f124
TPCP8R01
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
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MRF20060R/D
MRF20060R
MRF20060RS
MRF20060R
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BD136
Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf
Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
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MRF20060R/D
MRF20060R
MRF20060RS
MRF20060R)
MRF20060R
BD136
MJD47
MRF20060RS
MURS160T3
rohm mtbf
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LDMOS
Abstract: LDMOS digital bipolar junction transistor "RF Power Transistors" mosfet high power rf ldmos AN1223 amplitude modulation applications
Text: AN1223 Application note RF power transistors: comparative study of LDMOS versus bipolar technology Introduction RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor yields superior
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AN1223
LDMOS
LDMOS digital
bipolar junction transistor
"RF Power Transistors"
mosfet high power rf ldmos
AN1223
amplitude modulation applications
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors
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T350 sot223
Abstract: AYW marking code IC t350 MMJT350T1 MMJT350T1G
Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR
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MMJT350T1
OT-223
MMJT350T1/D
T350 sot223
AYW marking code IC
t350
MMJT350T1
MMJT350T1G
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BUT11ApX equivalent
Abstract: PH4030AL philips uhp lamp driver power supply circuit diagram using ic tea1530 BT136 testing power management selection guide BU4508DX equivalent 2n7002 12w nxp BSN304 equivalent bu2508af equivalent
Text: Power Management selection guide 2008 Leading the power efficient connected world Table of contents Power MOSFETs 4 Automotive MOSFETs 16 Power Bipolar Transistors 20 Complex Discretes 22 Small-signal bipolar transistors 28 SCR's Triacs and Trigger Devices
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2sc5066
Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs
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SCE0004I
2SC380TM
2sc5066
MT3S111P
MT3S111
toshiba transistors catalog
TIM4450-4UL
TGI1314-50L
MT3S106
MT4S200T
X-band low noise amplifiers toshiba
2SC3136
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Untitled
Abstract: No abstract text available
Text: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE
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MMJT350T1
OT-223
MMJT350T1/D
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amplitude modulation applications
Abstract: LDMOS AN1223
Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain
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AN1223
amplitude modulation applications
LDMOS
AN1223
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mosfet high power rf ldmos
Abstract: Bipolar Junction Transistor AN1223 RF MOSFET CLASS AB
Text: AN1223 APPLICATION NOTE RF POWER TRANSISTORS: COMPARATIVE STUDY OF LDMOS VERSUS BIPOLAR TECHNOLOGY Serge Juhel 1. ABSTRACT RF power transistors consist of two type of devices: Bipolar Junction BJT and Field Effect (FET). Due to differences in technology, the bipolar junction transistor will yield superior performance for certain
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AN1223
mosfet high power rf ldmos
Bipolar Junction Transistor
AN1223
RF MOSFET CLASS AB
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C151
Abstract: C202 RS21501 RS23301 RS23603
Text: PRODUCT SUMMARY RS23301: Heterojunction Bipolar Transistor Power Amplifier For Personal Handyphone Systems APPLICATIONS DESCRIPTION • PHS handsets The RS23301 Heterojunction Bipolar Transistor HBT Power Amplifier (PA) is part of Skyworks' Personal Handyphone
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RS23301:
RS23301
03140A
C151
C202
RS21501
RS23603
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IRF544
Abstract: No abstract text available
Text: Application Note 1 MIC5011 Design Techniques by Mitchell Lee Introduction Power MOSFETs are oflen preferred over bipolar transistors as high current switches. In static switching applications the MOSFET takes no drive power, where a bipolar transistor requires a large base current. Bipolar transistors also exhibit
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MIC5011
IC5011
MIC5011
IRF544
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Irf544
Abstract: No abstract text available
Text: Application Note 1 MIC5011 Design Techniques by Mitchell Lee Introduction Power MOSFETs are often preferred over bipolar transistors as high current switches. In static switching applications the MOSFET takes no drive power, where a bipolar transistor requires a large base current. Bipolar transistors also exhibit
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MIC5011
Irf544
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high side MOSFET driver with charge pump
Abstract: high side MOSFET driver charge pump mosfet application solenoid driver IRF530 mosfet
Text: Application Note 01 MIC5011 Design Techniques by Mitchell Lee Introduction Power MOSFETs are often preferred over bipolar transistors as high current switches. In static switching applications the MOSFET takes no drive power, where a bipolar transistor requires a large base current. Bipolar transistors also exhibit
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MIC5011
high side MOSFET driver with charge pump
high side MOSFET driver charge pump
mosfet application solenoid driver
IRF530 mosfet
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IGT6D21
Abstract: IGT6E21
Text: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high
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IGT6D21
-f--10%
IGT6E21
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IC5011
Abstract: 4515V irf530g
Text: Application Note 1 MIC5011 Design Techniques by Mitchell Lee Introduction Power M OSFETs are often preferred over bipolar transistors as high current switches. In static switching applications the MOSFET takes no drive power, where a bipolar transistor requires a large base current. Bipolar transistors also exhibit
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MIC5011
IC5011
4515V
irf530g
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tic 1260 scr texas
Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Text: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.
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