cfl low loss drive
Abstract: phe13009 transistor BUJ100 DIMMER BUJ100 PHE13007 high power bipolar transistor selection Electronic ignitors for HID lamp circuits High power planar Transformer transistor BUT
Text: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading portfolio for energy-efficient lighting. Designed to support electronic ballast and transformer
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vol92
OT186A
O220AB
OT428)
cfl low loss drive
phe13009
transistor BUJ100
DIMMER
BUJ100
PHE13007
high power bipolar transistor selection
Electronic ignitors for HID lamp circuits
High power planar Transformer
transistor BUT
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AYW marking code IC
Abstract: BFr pnp transistor MMJT350T1G T350 306 marking code transistor
Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −
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MMJT350T1G
OT-223
MMJT350T1/D
AYW marking code IC
BFr pnp transistor
MMJT350T1G
T350
306 marking code transistor
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SMMJT350T1G
Abstract: marking code E3 sot223 306 marking code transistor
Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −
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MMJT350T1G,
SMMJT350T1G
AEC-Q101
MMJT350T1/D
marking code E3 sot223
306 marking code transistor
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MMJT
Abstract: No abstract text available
Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −
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MMJT350T1G,
SMMJT350T1G
MMJT350T1/D
MMJT
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Untitled
Abstract: No abstract text available
Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage
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MMJT350T1G
AEC-Q101
OT-223
MMJT350T1/D
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BU931 ST
Abstract: BU931P BU931 bu931 equivalent BU931T
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages TAB TAB Application ■ 1 2 2 The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
BU931 ST
BU931P
BU931
bu931 equivalent
BU931T
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BU931P
Abstract: BU931 BU931T JESD97
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
BU931P
BU931
BU931T
JESD97
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"CHAPTER 1 Introduction to Power Semiconductors"
Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General
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BU931
Abstract: BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
JESD97.
BU931
BU931P
BU931T
JESD97
W313
High voltage ignition coil driver
NPN POWER DARLINGTON TRANSISTORS
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rds035
Abstract: rds035l03 MMST8598 fet MK10 SM6K2 2SK3065 RHU002N06 RK7002 equivalent bc847bc 2sd198
Text: Standard Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Small signal type MOSFET RHU002N06 Medium Power Bipolar Transistors 0.5W-1.2W MPT3 Package Description CPT3 MPT3 Item Application Driver Low VCE (sat) High hFE High voltage SW High voltage-High speed SW
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RHU002N06
2SD2167
56to270
2SB1132
2SD1664
82to390
2SB1188
2SD1766
2SB1182
2SD1758
rds035
rds035l03
MMST8598
fet MK10
SM6K2
2SK3065
RHU002N06
RK7002 equivalent
bc847bc
2sd198
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BU407
Abstract: No abstract text available
Text: BU407 Power Transistor CRT Deflection Transistors Feature: NPN bipolar power transistors for use in high voltage, high speed transistors for horizontal deflection circuits of TVs and CRTs. Suitable for medium, high, and very high resolution monochrome and colour applications.
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BU407
O-220
BU407
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BU407
Abstract: No abstract text available
Text: BU407 Power Transistor CRT Deflection Transistors Features: • NPN bipolar power transistors for use in high voltage, high speed transistors for horizontal deflection circuits of TVs and CRTs. Suitable for medium, high, and very high resolution monochrome and colour applications.
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BU407
O-220
BU407
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors TECHNICAL DATA MIL-PRF 2N7369 JAN, JTX, JTXV QPL DEVICES Processed per MIL-PRF-19500/621 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current
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2N7369
MIL-PRF-19500/621
O-254
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2N4399
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors TECHNICAL DATA 2N4399 JANTX, JTXV 2N5745 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/433 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
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2N4399
2N5745
MIL-PRF-19500/433
1000C
2N4399
2N5745
O-204AA)
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BU108
Abstract: BDT3 2SC1943 2SC1419 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 5.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
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MJE8503A*
MJE8503A
WATT32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU108
BDT3
2SC1943
2SC1419
BU326
BU100
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MARKING 93 SOT89
Abstract: marking 93 sot-89 marking 93, sot-89 transistor marking 551 sot-89 marking 3A sot-89 marking codes transistors a1 sot-89 MARKING 5A SOT-89 SOT-89 Marking 93 2STN1550 P025H
Text: 2STF1550 2STN1550 Low voltage fast-switching NPN power bipolar transistors Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting devices in medium power
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2STF1550
2STN1550
OT-89
OT-223
2002/93/EC
OT-89
OT-223
2STF1550
2STN1550
MARKING 93 SOT89
marking 93 sot-89
marking 93, sot-89
transistor marking 551 sot-89
marking 3A sot-89
marking codes transistors a1 sot-89
MARKING 5A SOT-89
SOT-89 Marking 93
P025H
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2n5038
Abstract: 2N5039 transistor 2n5038
Text: Back to Bipolar Power Transistors TECHNICAL DATA 2N5038 JAN, JTX, JTXV 2N5039 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/439 NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
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2N5038
2N5039
MIL-PRF-19500/439
2N5038
2N5039
O-204AA)
transistor 2n5038
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2N3792
Abstract: 2N3791
Text: Back to Bipolar Power Transistors TECHNICAL DATA 2N3791 JAN, JTX, JTXV 2N3792 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/379 PNP HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
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2N3791
2N3792
MIL-PRF-19500/379
1000C
2N3791
2N3792
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RF TRANSISTOR 10GHZ
Abstract: SiC BJT 60Ghz bipolar transistor ghz s-parameter silicon bipolar transistor rf power amplifier AN1509 s-parameters of an 60GHz transistor bipolar transistor die layout
Text: AN1509 APPLICATION NOTE A VERY HIGH EFFICIENCY SILICON BIPOLAR TRANSISTOR F. Carrara - A. Scuderi - G. Tontodonato - G. Palmisano 1. ABSTRACT The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers was explored. To this end, a unit power cell was developed by optimizing layout design,
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AN1509
RF TRANSISTOR 10GHZ
SiC BJT
60Ghz
bipolar transistor ghz s-parameter
silicon bipolar transistor rf power amplifier
AN1509
s-parameters of an 60GHz transistor
bipolar transistor die layout
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IGBTs Transistors
Abstract: igbts
Text: MÌO ^ Insulated Gate Bipolar Transistor IGBT Insulated Gate Bipolar Transistors (IGBTs from International Rectifier combine the characteristics of established HEXFET power MOSFETs with high-current, low saturation voltage capability of bipolar transistors, and the peak current capability of two larger
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300/1000/1200V
IGBTs Transistors
igbts
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors NSA5019 HIGH-POWER TRANSISTOR MAXIMUM RATINGS RATINGS Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Peak Base Current Total Device Dissipation @ Tc = 25#C Derate Above 25#C
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NSA5019
2N5019
300ns,
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors BUT100 PNP SILICON POWER TRANSISTOR • • HIGH VOLTAGE LOW VCE SATURATION @ IOOa MAXIMUM RATINGS UNITS SYMBOL BUT100 RATINGS Vdc 125 Collector-Emitter Voltage ^CEO Vdc 300 Collector-Base Voltage VcB Vdc 5.0 Emitter-Base Voltage
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BUT100
BUT100
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Untitled
Abstract: No abstract text available
Text: Back to Bipolar Power Transistors MJEC340 CHIP MEDIUM POWER NPN 0.5 AMPERE SILICON TRANSISTOR POWER TRANSISTOR NPN SILICON 300 VOLTS .useful for high-voltage general purpose applications. - Suitable for Transformerless, Line-Operated Equipment - Thermopad Construction Provides High Power Dissipation Rating
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MJEC340
3kA/10kA/10kA
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JE8503
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE8503A* Advance Information SWITCHMODE Series *Motorola Preferred Device NPN Bipolar Power Transistor POWER TRANSISTORS 6.0 AMPERES 1500 VOLTS — BVCES 80 WATTS The MJE8503A transistor is designed for high voltage, high speed, power switching
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JE8503A*
MJE8503A
MJE8503A
JE8503
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