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    POWER AMPLIFIER NXP Search Results

    POWER AMPLIFIER NXP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    POWER AMPLIFIER NXP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NXP digital I2S-input mono Class-D audio amplifier TFA9882 Save power and space with I2S-input Class-D audio amplifier This small, mono digital-input Class-D audio amplifier delivers up to 3.4 W of power. It has ` ultra-low quiescent power consumption 6.5 mW , minimizes RF susceptibility, and is optimized `


    Original     		PDF TFA9882

    Untitled

    Abstract: No abstract text available
    Text: NXP digital PDM-input mono Class-D audio amplifier TFA9881 Simplify your audio architecture with a PDM-input amplifier The ultra small mono digital-input Class-D audio amplifier, the TFA9881 delivers up to 3.4 W of power, has ultra-low quiescent power consumption 6.5 mW , minimizes RF susceptibility,


    Original     		PDF TFA9881 TFA9881

    Untitled

    Abstract: No abstract text available
    Text: NXP Class G stereo headphone amplifier SA58635 with I2C volume control High-fidelity headphone amplifier maximizes battery life This highly efficient Class G, 2x25 mW headphone amplifier features dynamic power management and uses the I2C bus for volume control. It saves power and extends music playback in a range of


    Original     		PDF SA58635

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD502 550 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 1995 Oct 25 2001 Nov 15 NXP Semiconductors Product specification 550 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD502 OT115J R77/04/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD702N 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD702N OT115J R77/03/pp9

    BGD802

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES


    Original     		PDF M3D252 BGD802 OT115J 613518/07/pp10 BGD802 DIN45004B

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD712 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD712 OT115J 613518/04/pp9

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD702 OT115J 613518/07/pp10

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD816L 860 MHz, 21.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 May 18 2001 Nov 15 NXP Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD816L OT115J R77/05/pp8

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD714 750 MHz, 20.3 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD714 OT115J 613518/04/pp9

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D252 BGD802 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 30 2002 Jan 23 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES BGD802


    Original     		PDF M3D252 BGD802 OT115J 613518/07/pp10

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier FEATURES


    Original     		PDF M3D248 BGD885 OT115D R77/07/pp8

    BGD714

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD714 750 MHz, 20.3 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 29 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 20.3 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD714 OT115J 613518/04/pp9 BGD714 DIN45004B

    BGD702

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD702 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Nov 02 2001 Nov 27 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD702 OT115J 613518/07/pp10 BGD702 DIN45004B

    nxp hybrid amplifier modules

    Abstract: BGD904 BGD904MI DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D252 BGD904; BGD904MI 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2000 Jan 10 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES


    Original     		PDF M3D252 BGD904; BGD904MI OT115J BGD904 613518/07/pp11 nxp hybrid amplifier modules BGD904 BGD904MI DIN45004B

    BGD812

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD812 OT115J 613518/04/pp10 BGD812 DIN45004B

    BGD814

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD814 OT115J 613518/04/pp10 BGD814 DIN45004B

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D252 BGD812 860 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Oct 30 NXP Semiconductors Product specification 860 MHz, 18.5 dB gain power doubler amplifier FEATURES


    Original     		PDF M3D252 BGD812 OT115J 613518/04/pp10

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D252 BGD804 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES


    Original     		PDF M3D252 BGD804 OT115J MSA319 R77/03/pp11

    BGD702N

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD702N 750 MHz, 18.5 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 750 MHz, 18.5 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD702N OT115J R77/03/pp9 BGD702N DIN45004B

    BGD885

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D248 BGD885 860 MHz, 17 dB gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 2001 Nov 02 NXP Semiconductors Product specification 860 MHz, 17 dB gain power doubler amplifier


    Original     		PDF M3D248 BGD885 OT115D R77/07/pp8 BGD885 DIN45004B

    BGD804

    Abstract: DIN45004B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D252 BGD804 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Mar 26 2001 Nov 01 NXP Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier


    Original     		PDF M3D252 BGD804 OT115J MSA319 R77/03/pp11 BGD804 DIN45004B

    CGD923

    Abstract: MGU820
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D848 CGD923 870 MHz, 20 dB gain power doubler amplifier Product specification 2002 Oct 08 NXP Semiconductors Product specification 870 MHz, 20 dB gain power doubler amplifier FEATURES CGD923 PINNING - SOT115AE • High output capability


    Original     		PDF M3D848 CGD923 OT115AE 613518/01/pp8 CGD923 MGU820

    TDA1517P

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DAT TDA1517; TDA1517P 2 x 6 W stereo power amplifier Product specification Supersedes data of 2002 Jan 17 2004 Feb 18 NXP Semiconductors Product specification 2 x 6 W stereo power amplifier TDA1517; TDA1517P FEATURES GENERAL DESCRIPTION


    Original     		PDF TDA1517; TDA1517P TDA1517 HDIP18) R30/05/pp15 TDA1517P