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    POLYSILICON RESISTOR FABRICATION Search Results

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    POLYSILICON RESISTOR FABRICATION Datasheets Context Search

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    TRANSISTOR cBC 415

    Abstract: Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf
    Text: e Inside the RF Power Transistor Prepared by Ted Johansson, Dr. Tech. Process and Device Design, Business Center RF Power, Ericsson Components AB, Kista, Sweden Introduction The purpose of this application note is to show some of the chip level design considerations and technical details


    Original     		PDF TED-21, TRANSISTOR cBC 415 Inside the RF Power Transistor PTB20105 RF POWER TRANSISTOR RF Transistor Selection transistor theory ericsson rf

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

    ED26 diode

    Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the


    Original     		PDF AN8602 ED26 diode 8602 RECTIFIER mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981

    iso 7813

    Abstract: ISO/7813 ST14C04C AN1062 M14128 M14256 M14C04 M14C16 M14C32 M14C64
    Text: AN1062 APPLICATION NOTE Changing from the ST14xxx to the M14xxx I²C EEPROM Memory Card Products in Your Application STMicroelectronics I²C EEPROM Memory Card products range from the low density ST14C02C 2 Kbit up to the high density M14256 (256 Kbit). Near the middle of this range, the ST14xxx memories, fabricated


    Original     		PDF AN1062 ST14xxx M14xxx ST14C02C M14256 iso 7813 ISO/7813 ST14C04C AN1062 M14128 M14256 M14C04 M14C16 M14C32 M14C64

    L504XXX

    Abstract: transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit
    Text: March 1996 RR-B1A High-Frequency Bipolar Products Reliability Report This report presents the product reliability data for Maxim’s High-Frequency Bipolar analog and digital products. This data was collected from extensive reliability stress tests performed between June 1, 1994 and July 1,


    Original     		PDF 12GHz 27GHz L504XXX transistor 9427 m507xxx 9437 transistor CLCC 100 1550371 9434 8 pin integrated circuit

    Philips high frequency bipolar transistor with Ft

    Abstract: equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original     		PDF MGM011 BLV861 BLV2045 Philips high frequency bipolar transistor with Ft equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor bc 107 TRANSISTOR equivalent BIPOLAR TRANSISTOR VDMOS DEVICE NPN planar RF transistor Philips high frequency bipolar transistor bipolar transistor die layout

    applications of mos controlled thyristor

    Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF

    iso 7813

    Abstract: m14c AN1062 M14128 M14256 M14C04 M14C16 M14C32 M14C64 ST14C02C
    Text: AN1062 APPLICATION NOTE Changing from the ST14xxx to the M14xxx I C EEPROM Memory Card Products in Your Application STMicroelectronics I C EEPROM Memory Card products range from the low density ST14C02C 2 Kbit up to the high density M14256 (256 Kbit). Near the middle of this range, the ST14xxx memories, fabricated


    Original     		PDF AN1062 ST14xxx M14xxx ST14C02C M14256 iso 7813 m14c AN1062 M14128 M14256 M14C04 M14C16 M14C32 M14C64 ST14C02C

    MOS Controlled Thyristor

    Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN-7504 MOS Controlled Thyristor GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode

    uPB1509B

    Abstract: poly silicon resistor mmic j
    Text: 1, Introduction In the fields of comm unication systems and consumer electronics e.g.CATV receivers, SHF broadcasting reseivers and BS/CS tuners , analog and degital ICs from UHF to microwave frequency range are widely used. These analog and degital ICs are required for compactness, economy


    Original     		PDF uPB1509B PB15O9B poly silicon resistor mmic j

    smd transistor 312

    Abstract: rf amplifier siemens 10 ghz SIEMENS MICROWAVE RADIO 8 GHz BGA310 BGA312 BGA318 Siemens MMIC Polytechnic diagram radar circuit SMX-1
    Text: APPLICATIONS MMICs Gerhard Lohninger ● Knut Brenndörfer Jakob Huber ● Thomas Pollakowski Monolithic broadband amplifiers go mobile In wireless communications, there is a distinct trend toward more compact and lighter terminals. This means that the components used


    Original     		PDF

    4mv microphone

    Abstract: hearing aid chip microphone smd siemens air pressure sensors digital hearing aids hearing aid microphone capacitive pressure sensor SIEMENS SI mobile microphone hearing aid
    Text: Silicon Micromachined Microphone Chip at Siemens A. Dehé, R. Aigner*, T. Bever, K.-G. Oppermann*, E. Pettenpaul, S. Schmitt and H.-J. Timme * Siemens AG, Semiconductor Group, HL GS SNS, Balanstr. 73, 81617 Munich, Germany Siemens AG, Corporate Technology, ZT ME1, Otto-Hahn-Ring 6, 81739 Munich, Germany


    Original     		PDF 800nm 100-10kHz. 4mv microphone hearing aid chip microphone smd siemens air pressure sensors digital hearing aids hearing aid microphone capacitive pressure sensor SIEMENS SI mobile microphone hearing aid

    low power and area efficient carry select adder v

    Abstract: IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER 16 bit carry select adder 32 bit carry select adder 8 bit carry select adder full subtractor implementation using NOR gate 32 bit ripple carry adder carry select adder full subtractor circuit using nor gates BCD adder use rom
    Text: MVA60000 MVA60000 Series 1.4 Micron CMOS MEGACELL ASICs DS5499 ISSUE 3.1 March 1991 GENERAL DESCRIPTION Very large scale integrated circuits, requiring large RAM and ROM blocks, often do not suit even high complexity gate arrays, such as Zarlink Semiconductors' CLA60000 series.


    Original     		PDF MVA60000 MVA60000 DS5499 CLA60000 low power and area efficient carry select adder v IMPLEMENTATION of 4-BIT LEFT SHIFT BARREL SHIFTER 16 bit carry select adder 32 bit carry select adder 8 bit carry select adder full subtractor implementation using NOR gate 32 bit ripple carry adder carry select adder full subtractor circuit using nor gates BCD adder use rom

    MIL-STD 833 test method 3015

    Abstract: marking cdm Physical Analysis of Data on Fused-Open Bond Wires A114A cmos esd sensitivity instantaneous overcurrent relay
    Text: EOS/ESD ADI Reliability Handbook Introduction Electrical overstress EOS has historically been one of the leading causes of integrated circuit failures, regardless of the semiconductor manufacturer. In general terms, electrical overstress can be defined as any condition where


    Original     		PDF AN-397, notes/AN-397 AN-311, notes/AN311 MIL-STD 833 test method 3015 marking cdm Physical Analysis of Data on Fused-Open Bond Wires A114A cmos esd sensitivity instantaneous overcurrent relay

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
    Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General


    Original     		PDF

    ST 9427

    Abstract: 155-0241 155-0241-02 M726* TRANSISTOR st 9635 1550371 74935 M605030 806-0300 transistor 9427
    Text: December 1997 RR-B2A High-Frequency Bipolar Products Reliability Report This report presents the product reliability data for Maxim’s High-Frequency Bipolar analog and digital products. This data was collected from extensive reliability stress tests performed between June 1, 1994 and


    Original     		PDF 12GHz 27GHz ST 9427 155-0241 155-0241-02 M726* TRANSISTOR st 9635 1550371 74935 M605030 806-0300 transistor 9427

    amplifier siemens sot-363

    Abstract: dc to 3 ghz lna application circuits SOT343 C5 BGA425 SIEGET-25 T505 BGA420 dc to 3 ghz lna amplifier application circuits C4 to BGA bga 100 PACKAGE footprint
    Text: Discrete semiconductors Silicon MMICs with stable 50 ⍀ matching right up to 3 GHz One and two-stage silicon MMICs based on SIEGET -25 technology are now available with completely stable 50 ⍀ impedance matching over the entire frequency range up to 3 GHz. Excellent noise and gain


    Original     		PDF SIEGET-25 amplifier siemens sot-363 dc to 3 ghz lna application circuits SOT343 C5 BGA425 T505 BGA420 dc to 3 ghz lna amplifier application circuits C4 to BGA bga 100 PACKAGE footprint

    polysilicon resistor

    Abstract: cd22 CD34 CD56 CD77 polysilicon resistor fabrication transistor arrays 5v J553S
    Text: calDICE Dielectrically-Isolated, Linear,; Bipolar Semi-Custom Arrays CD22/./CD911 Preliminary DESCRIPTION FEATURES CalDICE are CALOGIC’s family of semi-custom arrays featuring Dielectrically-Isolated Complementary Electronics. CalDICE are fabricated using a 90V, complementary bipolar


    OCR Scan     		PDF CD22/. /CD911 CD911, ia443EE polysilicon resistor cd22 CD34 CD56 CD77 polysilicon resistor fabrication transistor arrays 5v J553S

    floating-gate

    Abstract: Valence eeprom memory cell
    Text: EEPROM Process Information PROCESS AND TECHNOLOGY AM D's EEPROM technology is based on the highly successful N-channel EPROM process that has had years of manufacturing history at AMD. To achieve the goal of electrical erasability, an additional masking step


    OCR Scan     		PDF 0324A-006A floating-gate Valence eeprom memory cell

    NFET DIE CHIP

    Abstract: poly silicon resistor OP02
    Text: . I . - HOLT INTEGRATED CIRCUITS 1£E J T 454114.3 OOQOEbl 4 •P¥2-3/ HI - 5 3 0 0 CMOS ANALOG/DIGITAL ARRAY General Description The HI-5300 CMOS Analog/Digital Array uses stan­ dard CMOS silicon gate double poly fabrication tech­


    OCR Scan     		PDF HI-5300 NFET DIE CHIP poly silicon resistor OP02

    memory cell 4T 6T

    Abstract: No abstract text available
    Text: ^EDI Data Retention Electronic Design« inc. CMOS SRAM Battery Backed Operation CMOS Static SRAM Battery Backed Operation As CMOS Static RAM technologies have evolved, silicon design engineers have continually strived to provide a total memory solution, for all types of system requirements, to the


    OCR Scan     		PDF

    HA 1370 schematics

    Abstract: CMOS XNOR XOR NAND2 NAND3 ic ttl and not xor nor xnor or MICRON POWER RESISTOR 2W ECL IC NAND
    Text: PRELIMINARY Semiconductor December 1990 NGM Series ABiC BiCMOS/ECL Gate Arrays General Description Features The NGM Series is a new family of mixed ECL and BiCMOS gale arrays based on National’s revolutionary 0.8 micron drawn ABiC BiCMOS process. The NGM Series is the first


    OCR Scan     		PDF TL/U/10861-4 HA 1370 schematics CMOS XNOR XOR NAND2 NAND3 ic ttl and not xor nor xnor or MICRON POWER RESISTOR 2W ECL IC NAND

    Differential Pressure siemens

    Abstract: KPY 10
    Text: Technologie der KPY-Familie Technology of the KPY-Family SIEMENS 2 Technologie 2 Technology 2.1 Scheibenherstellung 2.1 W afer Fabrication Die meisten Schritte zur Herstellung von Drucksensoren sind die Prozesse der Silizium-Planartechnologie. Zu diesen kommen


    OCR Scan     		PDF

    VK200 INDUCTOR

    Abstract: inductor vk200
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and


    OCR Scan     		PDF MRF175LU MRF175LV MRF175L MRF175LU MRF175LV VK200 INDUCTOR inductor vk200