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    POLYSILICON FUSE Search Results

    POLYSILICON FUSE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE812NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, Fixed Over Voltage Clamp, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE712BNL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 Visit Toshiba Electronic Devices & Storage Corporation

    POLYSILICON FUSE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fusible resistor

    Abstract: fusible fusible fused resistor polysilicon fuse resistor AAAA fusible fuse resistor
    Text: Fusible Links  June 1995 Features Applications • Made with Polysilicon one minimum square ~ 50W • Resistor Trimming • Programming Applications • Easy and Fast Tester Programmable (~10 ms) • Device Identification / Serial Number • Typical Power Supply Required for 2 µm width:


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    fusible

    Abstract: fusible fuse resistor Links passivation resistor trimming
    Text: Fusible Links  October 1995 Features Applications • • • • • • • Made with Polysilicon one minimum square ~ 50ohms Easy and Fast Tester Programmable (~10 ms) Typical Power Supply Required for 2 µm width: 10 volts Proven Reliability Resistor Trimming


    Original     		PDF 50ohms) fusible fusible fuse resistor Links passivation resistor trimming

    Untitled

    Abstract: No abstract text available
    Text: One Time Programming Features • Made with Polysilicon one minimum square ~ 50 Ohms • Easy and Fast Tester Programmable (~10 ms) • Typical Power Supply Required for 2 µm width: 10 volts • Proven Reliability Description Fusible links can be designed in all Mitel CMOS processes to


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    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3

    cmos transistor 0.35 um

    Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
    Text: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation


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    SG 1050

    Abstract: C06 60V polysilicon fuse
    Text: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells


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    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35-micron MOS RM3

    1 kilo ohm resistor specifications

    Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
    Text: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •


    Original     		PDF AT46700 1 kilo ohm resistor specifications RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM

    180NM mos

    Abstract: 180NM IBM 180NM aluminium 6351 IBM efuse 180-nm polysilicon resistor International CMOS Technology
    Text: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Global Engineering Solutions Highlights offers a leading-edge CMOS image sensor CIMG technology based on Standard features: Optional features: IBM’s industry-standard 180-nm CMOS


    Original     		PDF 180-nm TGD01612-USEN-07 180NM mos 180NM IBM 180NM aluminium 6351 IBM efuse polysilicon resistor International CMOS Technology

    130nm CMOS

    Abstract: ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR
    Text: High-quality imaging for small format applications Foundry technologies 130-nm/180-nm CMOS image sensor CIMG7HY IBM Global Engineering Solutions offers Highlights a leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features:


    Original     		PDF 130-nm/180-nm 130-nm 180-nm TGD03007-USEN-02 130nm CMOS ibm 130nm CMOS IBM efuse cmos IMAGE SENSOR 180-nm 130nm 180NM mos 180NM linear cmos camera SENSOR

    180-nm

    Abstract: 180NM mos CMOS/0.18-um CMOS technology
    Text: High-quality imaging for a wide range of applications Foundry technologies 180-nm CMOS image sensor IBM Semiconductor solutions offers a Highlights leading-edge CMOS image sensor CIMG technology based on IBM’s Standard features: Optional features: •


    Original     		PDF 180-nm TGD01612-USEN-02 180NM mos CMOS/0.18-um CMOS technology

    ASX 12 D Germanium Transistor

    Abstract: 1394 audio subunit domino logic,dynamic logic ibm 6X86MX IBM-6x86MX Japan dvd cjc Transistor Data Book nand flash HET PR333 PR300 APPLE LM INVERTER
    Text: v ol 4 3 ume A publication of IBM Microelectronics IBM’s Blue Logic Strategy In This Issue Third Quarter 1998, Vol. 4, No.3 1 IBM’s Blue Logic Strategy 4 High-Speed Design Styles Leverage IBM Technology Prowess 8 Low-Power Methodology and Design Techniques


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    XH035

    Abstract: mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3
    Text: 0.35 µm CMOS Process Family XH035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular Analog Mixed Signal Technology with RF capability and HV Extensions Description The XH035 series is X-FAB’s 0.35-micron Modular RF capable Mixed Signal Technology. Main target


    Original     		PDF XH035 XH035 35-micron mos rm3 data nmos transistor 0.35 um MOS RM3 "X-Fab" Core cell library bsim3v3 jfet wn 428 PHVC polysilicon resistor bsim3

    Untitled

    Abstract: No abstract text available
    Text: ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA • ■ ■ ■ ■ ■ ■ 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET VERY HIGH RELIABILITY LEVEL


    Original     		PDF ST1200 ST1200

    74LS04

    Abstract: 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010
    Text: Application Note 14 Design Considerations for All-Silicon Delay Lines www.dalsemi.com SILICON DELAY LINES VS. HYBRID L-C NETWORKS Figure 1 shows internal views of a typical 5-tap hybrid delay line and its silicon counterpart. A hybrid is manufactured using a commercially available hex inverter DIP e.g., 74LS04 with a small PC board


    Original     		PDF 74LS04) DS1007, 74LS04 74ls04 dip specification of IC 74ls04 20-PIC NOT gate 74LS04 DS1000 DS1000-IND DS1005 DS1007 DS1010

    Untitled

    Abstract: No abstract text available
    Text: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 with a resolution of better than 0.4% of the difference between VDD and VSS. A lockout trim after gain and offset adjustment


    Original     		PDF AD8555 50nV/Â AD8555AR

    Untitled

    Abstract: No abstract text available
    Text: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 supply voltage variations. Output offset voltage can be adjusted with a resolution of better than 0.4% of the difference between


    Original     		PDF AD8555 50nV/Â

    DS-1100

    Abstract: 74ls04 dip 74LS04 Hex Inverter definition 74LS04 DS-1135 74LS04 NOT gate IC data sheet 74LS04 NOT gate 74LS04 sample 74LS04 DS1000-IND
    Text: OSCILLATORS/DELAY LINES/TIMERS/COUNTERS Feb 21, 2002 App Note 14: Design Considerations for AllSilicon Delay Lines This application brief discusses the architectural and structural differences between solid-state and hybrid delay lines. In many cases, solid-state delay


    Original     		PDF DS1007, DS1007: DS1100: DS1110: DS1135: DS-1100 74ls04 dip 74LS04 Hex Inverter definition 74LS04 DS-1135 74LS04 NOT gate IC data sheet 74LS04 NOT gate 74LS04 sample 74LS04 DS1000-IND

    AD8555

    Abstract: AD8555AR otp polyfuse
    Text: Zero-Drift, Single-Supply, Sensor Signal Amplifier with Digitally Programmable Gain and Offset a Preliminary Technical Data AD8555 with a resolution of better than 0.4% of the difference between VDD and VSS. A lockout trim after gain and offset adjustment


    Original     		PDF AD8555 AD8555AR PR04598-0-1/04 AD8555 otp polyfuse

    74LS04 Hex Inverter definition

    Abstract: 74ls04 dip ttl cmos advantages disadvantages 74LS04 DS-1100 Appnote14 TTL 74ls04 data DS1005 DS1100 DS1110
    Text: Maxim > App Notes > Oscillators/Delay Lines/Timers/Counters Keywords: DS1100, DS1135, DS1110, delay line, hybrid delay line, digital delay line, FAQ Sep 30, 2002 APPLICATION NOTE 14 Design Considerations for All-Silicon Delay Lines Abstract: This application brief discusses the architectural and structural differences between solid-state and


    Original     		PDF DS1100, DS1135, DS1110, DS1100: DS1110: DS1135: com/an14 APP14, Appnote14, 74LS04 Hex Inverter definition 74ls04 dip ttl cmos advantages disadvantages 74LS04 DS-1100 Appnote14 TTL 74ls04 data DS1005 DS1100 DS1110

    AD8557

    Abstract: lfcsp_VQ package otp polyfuse MO-220-VGGC MS-012-AA
    Text: Digitally Programmable Sensor Signal Amplifier AD8557 Preliminary Technical Data FEATURES APPLICATIONS Very low offset voltage: 10 V max over temperature Very low input offset voltage drift: 50 nV/°C max High CMRR: 96 dB min Digitally programmable gain and output offset voltage


    Original     		PDF AD8557 AD8557AR AD8557AR-REEL AD8557AR-REEL7 AD8557AR-EVAL AD8557ACP-R2 AD8557ACP-REEL AD8557ACP-REEL7 16-Lead AD8557 lfcsp_VQ package otp polyfuse MO-220-VGGC MS-012-AA

    antifuse

    Abstract: actel act1 family ANTIFUSE-based actel antifuse programming technology
    Text: Back Actel and the Antifuse Page 1 of 5 Actel and the Antifuse • • • • • • • • Introduction Antifuse vs Memory-based Programmable Logic Antifuse Technology Evaluating Antifuse Alternatives User Benefits of Actel's PLICE Technology Future Directions in Antifuse Technology


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    Untitled

    Abstract: No abstract text available
    Text: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to


    Original     		PDF XA035 XA035 35-micron

    T1200

    Abstract: polysilicon fuse OR-SMA-R
    Text: SGS-THOMSON m ST1200 256 BITS ONE TIME PROGRAMMABLE EPROM WITH LOCK OUT BRIEF DATA 256 X 1 ORGANIZATION 96 BITS PROTECTED IN WRITE MODE BY LOCK-OUT FUSE Figure 1 Delivery forms 5V VCC POWER SUPPLY AND 21V VPP PROGRAMMING VOLTAGE 85 MW IN READ MODE POWER ON RESET


    OCR Scan     		PDF ST1200 ST1200 T1200 polysilicon fuse OR-SMA-R