AT35700
Abstract: atmel 1505
Text: Standard Features • • • • • • • • • 5.0V low-leakage CMOS transistors 17V and 40V high-voltage LDMOS transistors High-density, double-poly memory cell Isolated NMOS and LDMOS transistors Analog Resistors Dual Poly Capacitor Mono-silicon capacitors
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AT35700,
AT35700
atmel 1505
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cmos transistor 0.35 um
Abstract: 0.35Um c035 ZENER C035 5V IMD2 transistor bsim3v3 polysilicon 20v zener diode 3.3v zener C035
Text: 0.35µ µm 5V / 3.3V CMOS Process ID: SL [C035] Applications Main Process Flow • Interfacing high density industry- • P Substrate standard 0.35um core logic to 5V • LOCOS Field Oxidation
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bsim3
Abstract: ZARLINK SEMICONDUCTOR ON SEMICONDUCTOR 613 C035 0.35uM 5V C035 5V
Text: 0.35µ µm 3.3V CMOS Process ID: SJ/SK [C035] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • LOCOS Field Oxidation • High precision mixed signal circuits.
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SG 1050
Abstract: C06 60V polysilicon fuse
Text: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells
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bsim3
Abstract: mos transistor ON SEMICONDUCTOR 613
Text: 0.6µ µm 5V CMOS Process ID: SC/SD [C06] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.
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C1206
Abstract: C1221
Text: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1221
C1221
C1206
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transistor k 2761
Abstract: C1206 TRANSISTOR C1206
Text: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
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C1206
C1206
C1206-4-98
transistor k 2761
TRANSISTOR C1206
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LOCOS
Abstract: ON SEMICONDUCTOR 613 poly dielectric capacitor 95nm poly1 poly2 resistor
Text: 0.5µ µm 3.3V CMOS Process ID: SH [C05] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • N Well • High precision mixed signal circuits.
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C1029
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
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C1029
65x65
C1029
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transistor k 2761
Abstract: k 2761 transistor poly silicon resistor C1230 hfe 118 transistor 338 transistor A 2761 poly1 poly2 resistor C1206 cox 15um
Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1230
C1230
transistor k 2761
k 2761 transistor
poly silicon resistor
hfe 118
transistor 338
transistor A 2761
poly1 poly2 resistor
C1206
cox 15um
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transistor k 2761
Abstract: C1230 C1206
Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1230
C1230
C1230-4-98
transistor k 2761
C1206
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bsim3v3
Abstract: C035ANV IMD2 transistor pmos Vt poly dielectric capacitor
Text: ANV Process ID: SM/SN [C035ANV] Applications Main Process Flow Situations where single-cell operation or • P Substrate extended battery life are key, e.g: • High Voltage Wells optional
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C035ANV]
bsim3v3
C035ANV
IMD2 transistor
pmos Vt
poly dielectric capacitor
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C1230
Abstract: transistor k 2761 poly silicon resistor k 2761 transistor k 351 transistor C1206
Text: ISO 9001 Registered Process C1230 BiCMOS 1.2µm Low TCR P-Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1230
C1230
transistor k 2761
poly silicon resistor
k 2761 transistor
k 351 transistor
C1206
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c1028 transistor
Abstract: c1028
Text: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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C1028
C1028-4-98
65x65
c1028 transistor
c1028
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C1206
Abstract: C1221 100x100um
Text: ISO 9001 Registered Process C1221 BiCMOS 1.2µm High Resistance Poly for Analog Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage
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C1221
C1221
C1221-4-98
C1206
100x100um
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C1206
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1206 BiCMOS 1.2µm 6.4GHz Electrical Characteristics T=25oC Unless otherwise noted N-Channel Transistor Threshold Voltage Body Factor Conduction Factor Effective Channel Length Width Encroachment Punch Through Voltage Poly Field Threshold Voltage
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C1206
C1206
C1206-4-98
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c1028
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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C1028
65x65
c1028
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C1028
Abstract: c1028 transistor
Text: ISO 9001 Registered Process C1028 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage N-Channel Low Voltage Transistor
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C1028
65x65
C1028
c1028 transistor
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C1029
Abstract: No abstract text available
Text: ISO 9001 Registered Process C1029 BiCMOS 1.0µm Schottky Diode and High-Resistance P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN Punch Through Voltage HVBVDSSN ON Resistance HVPR0N Operating Voltage
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C1029
C1029-4-98
65x65
C1029
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vertical pnp bjt
Abstract: 1000 hz cmos Image Sensors CMOS Process Family XO035 1P3M X-Fab 18VERTICAL BSIM3v3.2 VTB photo diodes
Text: 0.35 µm CMOS Process Family MIXED-SIGNAL FOUNDRY EXPERTS XO035 Modular CMOS Technology For Fast Optical Applications XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. Module Overview CORE MOS It is especially suited for applications needing
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XO035
XO035
405nm
650nm
vertical pnp bjt
1000 hz cmos Image Sensors
CMOS Process Family
1P3M
X-Fab
18VERTICAL
BSIM3v3.2
VTB photo diodes
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c1027 transistor
Abstract: transistor c1027 C1027 C-1027 transistor npn c1027 transistor equivalent c1027 transistor c1027 equivalent
Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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C1027
100x1
100x100
65x65
c1027 transistor
transistor c1027
C1027
C-1027
transistor npn c1027
transistor equivalent c1027
transistor c1027 equivalent
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transistor c1027
Abstract: C1027 c1027 transistor transistor equivalent c1027 C-1027 transistor c1027 equivalent transistor npn c1027 transistor c1027 equivalents
Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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C1027
100x1
100x100
C1027-4-98
65x65
transistor c1027
C1027
c1027 transistor
transistor equivalent c1027
C-1027
transistor c1027 equivalent
transistor npn c1027
transistor c1027 equivalents
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c1027 transistor
Abstract: transistor c1027 C1027 transistor equivalent c1027 transistor c1027 equivalent C-1027
Text: ISO 9001 Registered Process C1027 BiCMOS 1.0µm Low TC P-Poly Resistor Electrical Characteristics Symbol N-Channel High Voltage Transistor Threshold Voltage HVTN HVBVDSSN Punch Through Voltage ON Resistance HVPR0N Operating Voltage T=25oC Unless otherwise noted
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C1027
100x1
100x100
65x65
c1027 transistor
transistor c1027
C1027
transistor equivalent c1027
transistor c1027 equivalent
C-1027
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BR-1196
Abstract: BR1196 CAPACITOR 100 nano FARAD 25 VOLT ST37 0.1 micro farad capacitor 10 pico farad capacitor 1 micro farad capacitor 50 VOLT milli farad capacitor BR119 ST-37
Text: DIVISION DOCUMENT#-rev-# SEMICONDUCTEURS BROMONT, QUÉBEC PAGE # spe020.4 1 de 4 PARAMETERS PROCUREMENT SPECIFICATION FOR THE 5 VOLTS 1.2 µm PROCESS FAMILY TITRE CRÉATEUR FRANÇOIS PELLETIER RÉV DATE 1 2 25-04-94 21-04-95 ACI BR-952 BR-1196 DESCRIPTION
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spe020
BR-952
BR-1196
VTPTN50x1
ISUB50N1
6-JUL-95
BR-1241
FRM-008-REV-3
\0-mitel\doc\spe\spe020
BR-1196
BR1196
CAPACITOR 100 nano FARAD 25 VOLT
ST37
0.1 micro farad capacitor
10 pico farad capacitor
1 micro farad capacitor 50 VOLT
milli farad capacitor
BR119
ST-37
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