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    POLICE RADAR DETECTOR Search Results

    POLICE RADAR DETECTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR4510UR-AZ Renesas Electronics Corporation Detectors, , / Visit Renesas Electronics Corporation
    YCB16RL78I1D001B Renesas Electronics Corporation Smoke Detector Visit Renesas Electronics Corporation
    EXE8602-DNT Renesas Electronics Corporation 71 – 86 GHz Power Detector Visit Renesas Electronics Corporation
    ICL7665SCPAZ Renesas Electronics Corporation CMOS Micropower Over/Under Voltage Detector Visit Renesas Electronics Corporation
    ICL7665SACPAZ Renesas Electronics Corporation CMOS Micropower Over/Under Voltage Detector Visit Renesas Electronics Corporation

    POLICE RADAR DETECTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Schottky diode Die flip chip

    Abstract: police radar detector MADS-001317-1320AG
    Text: GaAs Solder Bump Flip Chip Schottky Diode MADS-001317-1320AG V1 Features • Low Series Resistance, 4 Ω • Low Capacitance, 45 fF • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Solderable Bump Die Attach Mounting Side with Solder Bumps


    Original     		MADS-001317-1320AG MADS-001317-1320AG Schottky diode Die flip chip police radar detector PDF

    MA4E2038

    Abstract: handling of beam lead diodes police radar detector M541
    Text: Millimeter Wave GaAs Beam Lead Schottky Barrier Diode MA4E2038 MA4E2038 Millimeter Wave GaAs Beam Lead Schottky Barrier Diode 1,2 Package Outlines Features • • • • • Low Series Resistance Low Capacitance High Cut off Frequency Silicon Nitride Passivation


    Original     		MA4E2038 MA4E2038 handling of beam lead diodes police radar detector M541 PDF

    Untitled

    Abstract: No abstract text available
    Text: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach


    Original     		MADS-001317-1320AG MADS-001317-1320AG PDF

    MO9072

    Abstract: No abstract text available
    Text: GUNN TRANSCEIVERS Voltage Controlled TM MO87127 – MO9140 Features ● Electronic Frequency Control ● High Doppler Sensitivity Levels ● Low AM and FM Noise Levels ● Direction-of-Motion Sensing ● Compact Size ● Pulsed Transceivers Available Applications


    Original     		MO87127 MO9140 MO9071, MO9072 MO9410-1, UG599/U WR-28 MO9072 PDF

    police radar detector

    Abstract: Schottky diode Die flip chip Schottky diode Die MADS-001317-1320AG police radar
    Text: MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode M/A-COM Products Rev. V2 Features • • • • • • Low Series Resistance, 4 Ω Low Capacitance, 45 fF High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Solderable Bump Die Attach


    Original     		MADS-001317-1320AG MADS-001317-1320AG police radar detector Schottky diode Die flip chip Schottky diode Die police radar PDF

    dielectric resonator

    Abstract: dielectric resonator filters for the application design dielectric resonator oscillator cavity resonator waveguide duplexer 10GHz OSCILLATOR dielectric resonator oscillator wireless cable tv ceramic coaxial resonators police radar detector
    Text: TOKEN TE01δ Dielectric Resonators & Materials Dielectric Resonator Materials Microwave Dielectric Resonator Material Is The Cornerstone of Future Communications Technology TE01δ Mode Preview Microwave dielectric ceramics as the key basic materials to modern communication technology, after Token


    Original     		PDF

    MA4E2037

    Abstract: MA4E2039 M541 MA4E2040
    Text: GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 MA4E2037, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Barrier Diodes Features • • • • • Package Outlines Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation


    Original     		MA4E2037, MA4E2039, MA4E2040 MA4E2037 MA4E2037 MA4E2039 MA4E2040 M541 PDF

    Schottky diode Die flip chip

    Abstract: police radar detector police radar detector detector MA4E1319-1 MA4E1319-2 0618 2375 MA4E1317 MA4E1318 "Schottky Barrier Diodes"
    Text: MA4E1317, MA4E1318 MA4E1317 MA4E1319-2 MA4E1319-1, MA4E2160 V2 GaAs Flip Chip Schottky Barrier Diodes Features • Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection • Designed for Easy Circuit Insertion


    Original     		MA4E1317, MA4E1318 MA4E1317 MA4E1319-1, MA4E1319-2 MA4E2160 MA4E1317 MA4E1318 MA4E1319-1 Schottky diode Die flip chip police radar detector police radar detector detector MA4E1319-2 0618 2375 "Schottky Barrier Diodes" PDF

    police radar detector

    Abstract: MA4E1317 police radar detector detector MA4E1318 MA4E1319-1 MA4E1319-2 Schottky diode Die flip chip
    Text: GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features ● ● ● ● ● ● MA4E13171, 2 Case Style 1198 Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection


    Original     		MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 MA4E13171, MA4E1317 MA4E1318 MA4E1319-1 MA4E1319-2 police radar detector police radar detector detector Schottky diode Die flip chip PDF

    MA4E2037

    Abstract: MA4E2039 M541 MA4E2040
    Text: MA4E2037, MA4E2039,MA4E2040 GaAs Beam Lead Schottky Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V2 MA4E2037 Description and Applications M/A-Com’s MA4E2037 single, MA4E2039 anti-parallel


    Original     		MA4E2037, MA4E2039 MA4E2040 MA4E2037 MA4E2037 MA4E2040 M541 PDF

    Untitled

    Abstract: No abstract text available
    Text: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V2 Features • • • • • • • • • • Usable Past 80GHz Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant


    Original     		MADS-001317-1500 80GHz MADS-001317â MADS-001317-1500 PDF

    Untitled

    Abstract: No abstract text available
    Text: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V3 Features • • • • • • • • • • Usable Past 80GHz Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant


    Original     		MADS-001317-1500 80GHz MADS-001317â MADS-001317-1500 PDF

    MADS-001317-1500

    Abstract: Schottky diode Die flip chip MADS-001317-1500AG SN63 PB37 PROFILES MADS-001317-1500AP MADS-001317
    Text: MADS-001317-1500 Solderable GaAs Flip Chip Schottky Diode Rev. V1 Features • • • • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection Lead Free RoHS Compliant Designed for Easy Circuit Insertion


    Original     		MADS-001317-1500 MADS-001317-1500 Schottky diode Die flip chip MADS-001317-1500AG SN63 PB37 PROFILES MADS-001317-1500AP MADS-001317 PDF

    MA4E2037

    Abstract: MA4E2038 MA4E2039 M541 MA4E2040 millimeter wave radar
    Text: MA4E2037, MA4E2038, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V3 MA4E2037, MA4E2038 Description and Applications


    Original     		MA4E2037, MA4E2038, MA4E2039, MA4E2040 MA4E2038 MA4E2037 MA4E2038 MA4E2039 MA4E2040 M541 millimeter wave radar PDF

    gunn diode radar

    Abstract: police radar detector radar gunn diode motion DOPPLER stereo doppler radar police radar detector detector GUNN OSCILLATORS police radar police radar detector receiver Gunn Diode
    Text: M /A-COM 's Commercial Sources Group manufactures a wide range of Gunn Diode based Oscillators, Motion Detection Modules, Voltage Controlled Oscillators and Telecommunication Transmitters and Receivers for short haul terrestrial radio links in Ku and K bands.


    OCR Scan     		PDF

    hyperabrupt tuned oscillator

    Abstract: missile seeker 4ST520 45331 police radar detector detector 45231 4648-1
    Text: M/A-COM TABLE 1 SEMICONDUCTOR PRODUCTS OPERATION • Burlington, MA 01803 • 617 272-3000 Silicon Abrupt Silicon Hyperabrupt G a AS Abrupt G a AS Hyperabrupt Good Fair Best Good Fair Good Fair Best Fair Good Good Best VCO's for Tuned Synthesizers (A) Instruments & Telecommunication


    OCR Scan     		4ST551 4ST552 4ST553 4ST554 4ST555 4ST556 4ST557 4ST558 4ST559 4ST560 hyperabrupt tuned oscillator missile seeker 4ST520 45331 police radar detector detector 45231 4648-1 PDF

    Avantek mixer sx

    Abstract: RF LNA 10 GHz Ground Radar diagram AVANTEK sx s band doppler mixer avantek police radar detector police radar detector detector radar block diagram radar system with circuit diagram
    Text: prelim inary d a ta sheet MSF-8870 Silicon Bipolar MMIC Frequency Converter July, 1986 QlAVANTEK O C \< ^ 005143 Avantek 70 Mil Package Features • Up or Down Frequency Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz • Low Phase Noise Self-Oscillating LO From 0.5 to


    OCR Scan     		ADS-1514/10-86 Avantek mixer sx RF LNA 10 GHz Ground Radar diagram AVANTEK sx s band doppler mixer avantek police radar detector police radar detector detector radar block diagram radar system with circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: prelim inary d a ta sheet 0AVAN TEK MSF-8870 Silicon Bipolar MMIC Frequency Converter July, 1986 O r\< ^ 005143 > p *0 ^ Avantek 70 Mil Package Features • Up or Down Frequency Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz • Low Phase Noise Self-Oscillating LO From 0.5 to


    OCR Scan     		MSF-8870 95GHz S-1514/10-86 PDF

    police radar detector

    Abstract: DOPPLER 10.525 ghz radar detector detector FM TRANSMITTER CIRCUIT Gunn Diode at power supply circuit police radar detector receiver police radar detector detector gunn diode x band amplifier police radar detector local oscillator frequency varactor diode for x band radar radar detector receiver
    Text: Glossary — Terms as used in this catalog ATTENUATOR — A PIN diode attenuator is a two terminal device capable of providing a prescribed RF attenuation based on the level of bias control applied. BARRIER HEIGHT — The barrier height of a Schottky junction determines the voltage current characteristics of that diode.


    OCR Scan     		A01803 police radar detector DOPPLER 10.525 ghz radar detector detector FM TRANSMITTER CIRCUIT Gunn Diode at power supply circuit police radar detector receiver police radar detector detector gunn diode x band amplifier police radar detector local oscillator frequency varactor diode for x band radar radar detector receiver PDF

    Avantek mixer

    Abstract: police radar detector normal radar circuit police radar detector detector MSF-8885 s band doppler mixer catv up converter diagram radar circuit police radar detector receiver radar block diagram
    Text: prelim inary d a ta sheet 0AVANTEK MSF-8885 Silicon Bipolar MMIC Frequency Converter July, 1986 o<?AOi 005141 c 3 V ^ r\ Avantek 85 Plastic Package Features RF O U TP U T AND BIAS • Up or Down Frequency Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz


    OCR Scan     		MSF-8885 ADS-1515/10-86 Avantek mixer police radar detector normal radar circuit police radar detector detector MSF-8885 s band doppler mixer catv up converter diagram radar circuit police radar detector receiver radar block diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: preliminary data sheet QlAVANTEK n'î .'N M SF-8885 Silicon Bipolar M M IC Frequency Converter July, 1986 o ,?ACji 005141 Avantek 85 Plastic Package Features RF O U TP U T AND BIAS Up or Down Frequency Conversion with up to 20 dB Conversion Gain RF Input From 0.5 to 10 GHz


    OCR Scan     		SF-8885 ADS-1515/10-86 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4E2037, MA4E2039, MA4E2040 M/A-COM GaAs Beam Lead Schottky Barrier Diodes RF & Micrawas/e Products Features Package Outlines • • • • • MA4E2037 Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation M ultiple Configurations


    OCR Scan     		MA4E2037, MA4E2039, MA4E2040 MA4E2037 MA4E2037 A4E2039 MA4E2040 PDF

    MA4E1317

    Abstract: No abstract text available
    Text: an A M P com pany GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 MA4E131712 Case Style 1198 Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Polyimide Scratch Protection


    OCR Scan     		MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 MA4E131712 MA4E1317 MA4E1319-1 MA4E1319-2 PDF

    Schottky diode Die flip chip

    Abstract: 0045E
    Text: M an A M P com pany GaAs Flip Chip Schottky Barrier Diodes MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 V2.00 Features • MA4E131712 Case Style 1198 Low Series Resistance • Low Capacitance • High Cutoff Frequency • Silicon Nitride Passivation • Polyimide Scratch Protection


    OCR Scan     		MA4E1317, MA4E1318 MA4E1319-1, MA4E1319-2 MA4E131712 MA4E1317 MA4E1319-1 MA4E1319-2 Schottky diode Die flip chip 0045E PDF