UL 1569
Abstract: No abstract text available
Text: www.hermeticswitch.com PO Box 2220 Chickasha, OK 73023 Phone: 405 224-4046 Fax: (405) 224-9423 ISO 9001 Registered Part Number PRX+1900 Contact Form C SPDT Switch Configuration Rev. C Cylindrical Proximity Sensor Features Advantages • Hermetically sealed contacts
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Abstract: No abstract text available
Text: www.hermeticswitch.com PO Box 2220 Chickasha, OK 73023 Phone: 405 224-4046 Fax: (405) 224-9423 ISO 9001 Registered PRX+8300 Part Number Contact Form C SPDT Switch Configuration Rev. C Low-Profile Proximity Sensor Features Advantages • Hermetically sealed contacts
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Untitled
Abstract: No abstract text available
Text: www.hermeticswitch.com PO Box 2220 Chickasha, OK 73023 Phone: 405 224-4046 Fax: (405) 224-9423 ISO 9001 Registered PRX+1300 Part Number C Contact Form Switch Configuration SPDT Rev. C Press-Fit Proximity Sensor for Burglar Alarm Industry Features Advantages
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Abstract: No abstract text available
Text: BOARD-to-BOARD Connectors 0.5mm MALE & FEMALE SET BBA SERIES BB5-PO-XXX-G-3.15-PP-T/R .107 [2.72] 0.5mm MALE A B .020 [0.50] .008 [0.20] .087 [2.20] .152 [3.86] .016 [0.40] BB5-PO-020-G-3.15-T/R SECTION A-A' C B .094 [2.40] .012 [0.30] .020 [0.50] .124 [3.15]
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15-PP-T/R
BB5-PO-020-G-3
15-T/R
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BOSCH 9 190 040 099 E
Abstract: schrack ZF 112 Schrack* zf 900 052 taiko relay TB1 taiko relay guardian relay 192 1C 12 NEC MR602 RELAYS NEC Relay MR31 24 nec omron g2v relay schrack ZF 132
Text: AMERICAN ZETTLER, INC. IT’S A BETTER RELAY SOLID STATE RELAYS AUTOMOTIVE RELAYS on lin e co m po ne nt s. co m ELECTROMECHANICAL RELAYS SELECTION GUIDE R E L AY SELECTION s. co m GUIDE on lin e co m po ne nt A m e r i c a n Z e t t l e r, I n c . R e v. 8 / 0 1 / 0 7
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AZ164â
AZ166
BOSCH 9 190 040 099 E
schrack ZF 112
Schrack* zf 900 052
taiko relay TB1
taiko relay
guardian relay 192 1C 12
NEC MR602 RELAYS
NEC Relay MR31 24 nec
omron g2v relay
schrack ZF 132
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r
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TIM7785-4SL
MW51050196
7785-4SL
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r
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TIM6472-4SL
2-11D1B)
MW50860196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r
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TIM7785-8SL
MW51090196
7785-8SL
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0C314
Abstract: H7 RF IC-311 SP 6554 A adcb 27 TI BB cross MC68HC11D3 MC68HC711D3 S002D OC310
Text: MC68HC11D3RG/AD MC68HC11D3 MC68HC711D3 PROGRAMMING REFERENCE GUIDE M MOTOROLA 192 BYTES STATIC RAM MULTIPLEXED ADDRESS/DATA BUS • A8 A15À A D 7 - -ADO À y y y DATA DIRECTION REGISTER C DATA DIRECTION REGISTER B PO RTC PO RTB A A
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MC68HC11D3RG/AD
MC68HC11D3
MC68HC711D3
MC68HC11D3)
MC68HC711D3)
0C314
H7 RF
IC-311
SP 6554 A
adcb 27
TI BB cross
MC68HC711D3
S002D
OC310
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10L Features • H igh po w e r - IM 3 = -45 d B c a t Po = 29 dB m , - S in g le c a rrie r level • H igh po w e r - P 1dB = 4 0 .5 d B m at 12.7 G H z to 13.2 G H z • H igh gain - G 1 b = 6 .0 dB at 12.7 G H z to 13.2 G H z
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TIM1213-10L
2-11C1B)
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38285824
Abstract: 927176-2
Text: METRIC DO NOT SCALE DIMENSIONS IN mm T H IR D A N G LE P R O JE C T IO N NOTES SNAP-IN THERE PO LARIZERS PN. 15 NO WINDOW F OR INDICATION OF SPECIAL-HEAD FIR ST IS WITH OR 927637-2 PO LARIZERS CAN B E AT TH IS APPLIED . END IN 10 AND 14 P O S . HEADERS PO SITIO N.
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30-JUN-0:
EH-0839-93
7-JUN-05
eq005694
C-828582
38285824
927176-2
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AC380
Abstract: Z0-28 2500 watt amplifier 59C82 AN610
Text: 7 - 7 4 - 0 9 - 0 1 8/90 pO aU E H R ' C O M PO N EN TS 2225-K M artin Avenue, Santa Clara, CA 95050 FA X 408 492-1400 (4 0 8 )4 9 2 -1 5 0 0 TO_8 Cascadabie Amplifier ^ AC380 (Typical Values) ( Outline Drawings') Ultra Low Noise Figure .
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7s/90
2225-K
AC380
59C82
AC380
Z0-28
2500 watt amplifier
59C82
AN610
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micro switch 91929 usa
Abstract: MIL-PRF-8805 micro switch 91929 6at6
Text: C A T A L O G L IS T IN G H MICRO SWITCH F R E E P O R T . ILLINOIS. U .S.A . A D IVISION O F H O N E Y W E L L FED. ASSEMBLYTOGGLE SWITCH 6AT6 M FG. C O D E 9 1 9 2 0 -NC TO C C IRC U IT MADE MAINTAINED PO SIT IO N -NO TO C CIRCUIT MADE (MAINTAINED PO SITIO N )
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C021979
-I50S66-B
C061908
FICO-68001
MIL-PRF-8805
INRUSH-------24
micro switch 91929 usa
MIL-PRF-8805
micro switch 91929
6at6
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC3147 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 147 VHF BAND PO W ER AM PLIFIER APPLICATIONS Unit in mm 18.4±Q5 • Output Power • : High Efficiency : Po = 50W Min. (f = 175MHz, V ee = 12.5V, = 70% (Typ.) VC, —70% (Typ.)
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2SC3147
175MHz,
156pF
39pFX
132pF
33pFX
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-16SL High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r - PidB = 4 2 .5 d B m at 5.9 G H z to 6.4 GHz
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TIM5964-16SL
MW50800196
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vqe 13
Abstract: APT35G60BN APT35G50BN APT35G60
Text: D • 0 5 5 ? ^ OOOObSl MêT aa d v a n c e d W æ PO W ER 'T C .V M rÆ Ê Ê T e c h n o l o g y APT35G60BN APT35G50BN PO W ER 3^0 « A V P 600V 500V 35A 35A M O S IV IG B T N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR
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APT35G60BN
APT35G50BN
O-247AD
vqe 13
APT35G60
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LFT 3A
Abstract: HA 1329 2SD1329
Text: HITACHI 2SD1329 R SILICON NPN TRIPLE DIFFUSED LOW FREQ UEN CY PO W ER AMPLIFIER PO W ER SWITCHING I. Base 2 C ollector (R a n g e 3 E m m er (D im en sio n s in m m ) {JE D E C TO-220AB} • A BSO LU T E MAXIMUM RATINGS (Ta=25°C) Item Symbol MAXIMUM COLLECTOR DISSIPATION
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2SD1329
O-220AB}
2SDI329Â
LFT 3A
HA 1329
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Untitled
Abstract: No abstract text available
Text: 44 P C B Terminal strips Terminal strips, standard parts, 2 solder p in s/po le Terminal strips, standard parts, 2 solder pins/pole Terminal strips, grey, standard parts, 2 solder p in s/po le 0.08 - 0.5 mm2 | A W G 28 - 20 in adjacent positions 0.75 mm2/ A W G 18
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-10L TECHNICAL DATA FEATURES : • H IG H G AIN H IG H PO W ER IM 3 = - 4 5 d B c at Po = 29 dBm , GidB = 6.0 dB at 10.7 G H z to 11.7 G H z B R O A D B A N D IN T E R N A LL Y M A T C H E D S ingle C arrier Level
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TIM1011-10L
TIM1011-10L--------------POWER
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Untitled
Abstract: No abstract text available
Text: fax id: 1068 _CY62256 32Kx8 Static RAM Features ou tp u t enable OE and th re e -sta te drivers. T his device has an au to m a tic po w er-dow n feature, reducing the po w e r c o n s u m p tion by 99 .9% w hen de selected . The C Y 6 22 56 is in the sta n
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CY62256
32Kx8
300-m
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656z
Abstract: HM-6562-5 HM-6562 HM-6561 HM-6611 HM-6562-9 HM-6562-2 ic HM 392 - 110 harris 6562
Text: HARRIS H M - 6 5 6 2 256 X 4 C M O S R A M S E M IC O N D U C T O R PRODUCTS DIVISION f p A DIVISION OF HARRIS CORPORATION NOT RECOMMENDED FOR NEW DESIGNS SEE HM-6561 Features Pinout LO W PO W ER S T A N D B Y LO W PO W ER O P E R A T IO N F A S T A C C E S S T IM E
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HM-6562
HM-6561
20mW/MHz
220nsec
HM-6562
656z
HM-6562-5
HM-6561
HM-6611
HM-6562-9
HM-6562-2
ic HM 392 - 110
harris 6562
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I1092
Abstract: No abstract text available
Text: Provisional Data Sheet No. PO 9.1287B International I G R Rectifier HEXFET PO W E R M O S F E T IRFY140CM N -C H A N N E L Product Summary 100 Volt, 0.077Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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1287B
IRFY140CM
D0S4S11
I1092
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M67717
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M67717 872-905MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © 1 PIN : 5 Pin : RF INPUT © V C C I : 1st. DC SUPPLY ® VC C 2 : 2nd. DC SUPPLY @VCC3 : 3rd. DC SUPPLY @ PO : RF OUTPUT ® G N D : FIN
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M67717
872-905MHZ,
M67717
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SK 43
Abstract: No abstract text available
Text: /SO-9001 CERTIFIED BY DESC M .S .K E N N E D Y CORP. 20 AMP, 200 VOLT M O S F E T S M A R T PO W ER 3-PH A SE M O T O R D R IV E PO W ER H Y B R ID /IQ Q *1 ^ T O ^ ì 8170 Thompson Road Cícera N.Y. 13039 315 699-9201 FEATURES: * * * * * * * I MIL-STD-1772 CERTIFIED
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SO-9001
25KHz
MIL-STD-1772
SK4321
Military-Mil-H-38534
SK 43
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