PN107F
Abstract: PN108F PNZ107F PNZ108F
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
PNZ108F)
MTGFR102-001
PN107F
PN108F
PNZ107F
PNZ108F
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PN107F
Abstract: PN108F PNZ107F PNZ108F Lx 3c paz1
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F φ4.6±0.15 M Di ain sc te on na tin nc ue e/ d 12.7 min. For optical control systems • Features 3° 1. 0± 0.
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
MTGFR102-001
PAZ108F
PN107F
PN108F
PNZ107F
PNZ108F
Lx 3c
paz1
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paz1
Abstract: No abstract text available
Text: Phototransistors PNZ107F PN107F , PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems • Wide directivity characteristics for easy use
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PNZ107F
PN107F)
PNZ108F
PN108F)
PNZ108F)
PAZ107F
paz1
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PNZ107F
Abstract: PNZ108F LX400
Text: Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use
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PNZ107F,
PNZ108F
PNZ107F
PNZ108F)
PNZ107F
PNZ108F
LX400
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PN107F
Abstract: PN108F PNZ107F PNZ108F
Text: Phototransistors PNZ107F, PNZ108F PN107F, PN108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use
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PNZ107F,
PNZ108F
PN107F,
PN108F)
PNZ107F
PNZ108F)
PN107F
PN108F
PNZ107F
PNZ108F
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F 4.5±0.2 • Features 2.45±0.25 2 0. di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo
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PDF
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PAZ107F
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ107F (PN107F), PNZ108F (PN108F) Silicon planar type PAZ107F For optical control systems 4.5±0.2 • Features 12.7 min. φ4.6±0.15 • Flat window design which is suited to optical systems
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PDF
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2002/95/EC)
PNZ107F
PN107F)
PNZ108F
PN108F)
PNZ108F)
PAZ107F
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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