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    PNP TRANSISTOR TO92 5V 200MA Search Results

    PNP TRANSISTOR TO92 5V 200MA Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR TO92 5V 200MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking 43 sot-89

    Abstract: "PNP Transistor" O A B C sot-89 TSB772S TSD772SCT TSD772SCY TSD882S PNP TRANSISTOR SOT89 tsd882
    Text: TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)


    Original     		PDF TSB772S OT-89 200mA TSD882S TSD772SCT TSD772SCY marking 43 sot-89 "PNP Transistor" O A B C sot-89 TSB772S TSD882S PNP TRANSISTOR SOT89 tsd882

    TSB772S

    Abstract: TSD772SCT TSD772SCY TSD882S
    Text: TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)


    Original     		PDF TSB772S OT-89 200mA TSD882S TSD772SCT TSD772SCY TSB772S TSD882S

    pnp Transistor TO92 5V 200mA

    Abstract: .0118 to92 0118 transistor TSB772S TSD772SCT TSD772SCY TSD882S PNP TRANSISTOR SOT89
    Text: TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -50V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)


    Original     		PDF TSB772S OT-89 200mA TSD882S TSD772SCT TSD772SCY -200mA pnp Transistor TO92 5V 200mA .0118 to92 0118 transistor TSB772S TSD882S PNP TRANSISTOR SOT89

    TSD882S

    Abstract: TSB772S TSB772SCT
    Text: TSB772S Low Vcesat PNP Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO -50V BVCEO -30V IC -3A VCE SAT Ordering Information Features ● ● Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSD882S


    Original     		PDF TSB772S 200mA TSD882S TSB772SCT -200mA TSD882S TSB772S

    2sa1013

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


    Original     		PDF 2SA1013 2SA1013 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


    Original     		PDF 2SA1013 2SA1013 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B 2SA1013G-x-T9N-B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


    Original     		PDF 2SA1013 2SA1013 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B

    2224B

    Abstract: 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W
    Text: LT1123 Low Dropout Regulator Driver U FEATURES • DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,


    Original     		PDF LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121 2224B 016W LT1123 LT1123CST LT1123CZ MJE1123 RUR67B1CB TA03 2N2907 PNP Transistor to 92 TRANSISTOR pnp 0.15W

    Untitled

    Abstract: No abstract text available
    Text: LT1123 Low Dropout Regulator Driver FEATURES DESCRIPTIO U The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,


    Original     		PDF LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121

    2N2907 PNP Transistor to 92

    Abstract: pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123
    Text: LT1123 Low Dropout Regulator Driver U FEATURES DESCRIPTIO The LT 1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an inexpensive low dropout regulator. The LT1123 consists of a trimmed bandgap reference, error amplifier,


    Original     		PDF LT1123 125mA LT1083/4/5 25VREF LT1117 800mA OT-223 LT1121 2N2907 PNP Transistor to 92 pnp marking 3W 2224B 1N4148 75V 150mA Diodes 2N2907 PNP Transistor 2n2907 TRANSISTOR PNP LT1123 LT1123CST LT1123CZ MJE1123

    A709 transistor

    Abstract: a709 fairchild a709 KSA709CGBU KSA709
    Text: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		PDF KSA709 -160V 800mW KSC1009 KSA709 KSA709CGBU KSA709CGTA KSA709COBU KSA709COTA A709 transistor a709 fairchild a709

    2224B

    Abstract: 2N2907 PNP Transistor to 92 transistor pnp 30V 2A 1W 1N4148 75V 150mA Diodes 2N2907 PNP Transistor TRANSISTOR pnp 0.15W 2N2907 LT1123 LT1123CZ MJE1123
    Text: LT1123 Low Dropout Regulator Driver U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Extremely Low Dropout Low Cost Fixed 5V Output, Trimmed to ±1% 700µA Quiescent Current 3-Pin TO-92 Package 1mV Line Regulation 5mV Load Regulation Thermal Limit


    Original     		PDF LT1123 LT1123 125mA 125ise 2224B 2N2907 PNP Transistor to 92 transistor pnp 30V 2A 1W 1N4148 75V 150mA Diodes 2N2907 PNP Transistor TRANSISTOR pnp 0.15W 2N2907 LT1123CZ MJE1123

    2n3906

    Abstract: 2n3906 PNP transistor DC current gain 2N3906-O 2N3906-G 2n3906 specification 2N3906-Y 2n3906 equivalent 2n3906 equivalent transistor
    Text: 2N3906 -0.2A, -40V PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES TO-92 Power Dissipation PCM: 625mW Ta=25°C Collector Current ICM: -200mA Collector – Base Voltage V(BR)CBO: -40V


    Original     		PDF 2N3906 625mW -200mA 2N3906-O 2N3906-Y 2N3906-G 31-Dec-2010 -10mA -50mA -10mA, 2n3906 2n3906 PNP transistor DC current gain 2N3906-O 2N3906-G 2n3906 specification 2N3906-Y 2n3906 equivalent 2n3906 equivalent transistor

    tv vertical ic circuit list

    Abstract: TV power transistor
    Text: KSA1013 KSA1013 Color TV Audio Output Color TV Vertical Deflection Output TO-92L 1 1. Emitter 2. Collector 3. Base PNP EPITAXIAL SILICON TRANSISTOR Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings


    Original     		PDF KSA1013 O-92L tv vertical ic circuit list TV power transistor

    NPN Transistor TO92 5V 200mA

    Abstract: CD1013 CD2383
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS CD1013 CD2383 PNP NPN TO-92 Plastic Package E CB Colour TV Audio and Vertical Deflecfion Output ABSOLUTE MAXIMUM RATINGS SYMBOL VCBO VALUE


    Original     		PDF CD1013 CD2383 C-120 CD1013 CD2383Rev101103E NPN Transistor TO92 5V 200mA CD2383

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    sanyo capacitor 1000uf 25v

    Abstract: Capacitor 3300uF 10V electrolytic capacitor 1uF 25v 3300uf 47uf, 16v electrolytic capacitor CAPACITOR 47UF 25V ELECTROLYTIC 0805 10V CAPACITOR X7R 4.7UF 330uF 16V capacitor electrolytic capacitor 3300uf 25v sanyo capacitor 680uf 25v
    Text: DSL Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 C4 1000uF 25V MV-AX D1 CMPSH-3 20 VP 19 VL BST ILIM DH COMP C1 8.2nF C5 4.7uF 25V 18 17 C3 0.1uF 16 LX DL VL GND 1,2,3 15 3.3V@1.8A 10,11,12 C13 2x 680uF 10V MV-AX N1B 14 U1 MAX1865T R13 100k OUT 1 POK FB 3


    Original     		PDF 1000uF 680uF MAX1865T 3300pF 2N3905 3300uF 4700pF 330uF EC10QS03L EC10QS06 sanyo capacitor 1000uf 25v Capacitor 3300uF 10V electrolytic capacitor 1uF 25v 3300uf 47uf, 16v electrolytic capacitor CAPACITOR 47UF 25V ELECTROLYTIC 0805 10V CAPACITOR X7R 4.7UF 330uF 16V capacitor electrolytic capacitor 3300uf 25v sanyo capacitor 680uf 25v

    MIC29502 ADJ

    Abstract: No abstract text available
    Text: Micrel Semiconductor Designing With LDO Regulators Section 4. Linear Regulator Solutions Super βeta PNP Regulators • MIC2920A — family of 400mA regulators in TO220, TO-263-3, SOT-223, and SO-8 packages. Fixed output voltages of 3.3V, 4.85V, 5V, and 12V


    Original     		PDF MIC5203 OT-143 LP2950 100mA O-92t MIC6211 MIC29712 MIC29502 ADJ

    2SA1013

    Abstract: 2sA1013 equivalent transistor TO-92 pnp
    Text: ST 2SA1013 TO-92 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2SA1013 200mA 500mA, 2SA1013 2sA1013 equivalent transistor TO-92 pnp

    transistor 2sa1013

    Abstract: 2SA1013
    Text: ST 2SA1013 TO-92 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2SA1013 200mA 500mA, transistor 2sa1013 2SA1013

    2sA1013 equivalent

    Abstract: 2SA1013
    Text: ST 2SA1013 TO-92 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


    Original     		PDF 2SA1013 200mA 500mA, 2sA1013 equivalent 2SA1013

    Untitled

    Abstract: No abstract text available
    Text: / T U lTC A ß EC H N O LO G Y _ m i 23 L o w D ro p o u t R e g u la to r D river FCOTUfteS DCSCftlPTIOn • Extremely Low Dropout ■ Low Cost ■ Fixed 5V Output, Trimmed to ±1 % ■ 700jaA Quiescent Current ■ 3-Pin TO-92 Package ■ 1mV Line Regulation


    OCR Scan     		PDF 700jaA LT1123 125mA LT1123

    Untitled

    Abstract: No abstract text available
    Text: r r u _ LT1123 r m TECHNOLOGY Lo w D ro p o u t R e g u la to r D river F€RTUR€S DCSCRIPTIOH • ■ ■ ■ ■ ■ ■ ■ ■ The LT1123 is a 3-pin bipolar device designed to be used in conjunction with a discrete PNP power transistor to form an


    OCR Scan     		PDF LT1123 LT1123 125mA 74C906 PSA12

    Untitled

    Abstract: No abstract text available
    Text: Section 4. Linear Regulator Solutions MIC2920A — family of 400mA regulators in TO220, TO-263-3, SOT-223, and SO-8 packages. Fixed output voltages of 3.3V, 4.85V, 5V, and 12V plus three adjustable versions are available. Super 3eta PNP Regulators Micrel’s easy to use Super Beta PNP™ LDO


    OCR Scan     		PDF MIC2920A 400mA O-263-3, OT-223, MIC2937A 750mA O-263