Untitled
Abstract: No abstract text available
Text: , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor TIP514 DESCRIPTION • Continuous Collector Current-lc= -5A • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min.)
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TIP514
-150V
1001C
-30mA;
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2SA1860
Abstract: 2SC4886
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4886 APPLICATIONS ·Designed for audio and general purpose applications.
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Original
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2SA1860
-150V
2SC4886
-150V
2SA1860
2SC4886
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PDF
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2SA1303
Abstract: 2SC3284 pnp transistor 5A 150V power transistor transistors equivalents
Text: INCHANGE Semiconductor Product Specification 2SA1303 Silicon PNP Power Transistor DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 APPLICATIONS ·Designed for audio and general purpose applications
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2SA1303
-150V
2SC3284
-150V
2SA1303
2SC3284
pnp transistor 5A 150V
power transistor transistors equivalents
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PDF
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2SA1107
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1107 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·For audio and general purpose applications
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Original
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2SA1107
-150V
-150V;
2SA1107
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PDF
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2SC4886
Abstract: 2SA1860
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1860 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC4886 APPLICATIONS ·Designed for audio and general purpose applications.
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Original
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2SA1860
-150V
2SC4886
-150V
2SC4886
2SA1860
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PDF
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2SC3284
Abstract: 2SA1303
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1303 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 APPLICATIONS ·Designed for audio and general purpose applications
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Original
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2SA1303
-150V
2SC3284
-150V
2SC3284
2SA1303
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PDF
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Untitled
Abstract: No abstract text available
Text: , One. J. CX TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1107 DESCRIPTION PIN I. BASE • Collector-Emitter Breakdown Voltage- 2. COLLECTOR V(BR)CEo=-150V(Min)
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Original
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2SA1107
-150V
MT-200
-25mA;
-150V;
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PDF
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Untitled
Abstract: No abstract text available
Text: J.S.IIS.LI ^zml-tLoncmctoi iJ^ioauati, Una. 20 STERN AVE. TELEPHONE: 973 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 U.S.A. FAX: Silicon PNP Power Transistor (973) 376-8960 2SA1303 ft 'X DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEO=-150V(Min)
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Original
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2SA1303
-150V
2SC3284
-25mA
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PDF
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2SA1068
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1068 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.
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2SA1068
-150V
-100mA;
-150V;
2SA1068
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PDF
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2SA649
Abstract: transistor 2sa649
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA649 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.
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Original
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2SA649
-150V
-25mA;
-150V;
2SA649
transistor 2sa649
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PDF
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2SA650
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA650 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.
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Original
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2SA650
-150V
-25mA;
-150V;
2SA650
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PDF
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2SB755
Abstract: 2SD845
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB755 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SD845 APPLICATIONS ·Designed for power amplifier applications.
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2SB755
-150V
2SD845
-10mA;
-150V;
2SB755
2SD845
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PDF
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2SA1166
Abstract: 100W AUDIO ic AMPLIFIER
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1166 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·High Power Dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 100W high-fidelity audio frequency
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2SA1166
-150V
-150V;
2SA1166
100W AUDIO ic AMPLIFIER
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PDF
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Untitled
Abstract: No abstract text available
Text: , One. J. C/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1068 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-150V(Min.) • Good Linearity of hFE
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Original
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2SA1068
-150V
-10mA;
-150V;
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PDF
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Untitled
Abstract: No abstract text available
Text: \Jtoaucti, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1166 DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEO=-150V(Min) • Good Linearity of hFE
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Original
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2SA1166
-150V
MT-200
-25mA;
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PDF
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2sa649
Abstract: transistor a4u
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA649 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-150V(Min.) • Wide Area of Safe Operation
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Original
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2SA649
-150V
-25mA;
-150V;
2sa649
transistor a4u
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PDF
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Untitled
Abstract: No abstract text available
Text: Jziieu ^Emi-L.onaucto'i £/-^ioaucti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA651 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR,cEo=-150V(Min.)
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2SA651
-150V
-25mA;
-200V;
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PDF
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2SB681
Abstract: 80 watts power amplifier
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB681 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) APPLICATIONS ·For AF power amplifier use. ·Recommended for use in output stage of 80 watts power
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2SB681
-150V
-50mA
-120V;
2SB681
80 watts power amplifier
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PDF
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2SA908
Abstract: 2SC1585
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA908 DESCRIPTION •High Power Dissipation: PC= 150W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min.) ·Complement to Type 2SC1585 APPLICATIONS ·Designed for amplifier and general purpose applications.
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2SA908
-150V
2SC1585
-50mA;
-150V;
2SA908
2SC1585
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PDF
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2SA971
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA971 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) ·High Power Dissipation APPLICATIONS ·Designed for general purpose applications. n c . i m e
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2SA971
-150V
-50mA;
-150V;
2SA971
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2SA1007
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1007 DESCRIPTION •High Current Capability ·Collector-Emitter Breakdown Voltage: V BR CEO= -150V(Min.) APPLICATIONS ·Designed for audio and general purpose applications.
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Original
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2SA1007
-150V
-30mA;
-150V;
2SA1007
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PDF
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2SA1186
Abstract: transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications
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Original
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2SA1186
-150V
2SC2837
2SA1186
transistor p100
2SC2837
2sA1186 transistor
transistor p90
y130
2sc2837 transistor
transistor pnp VCEO 12V Ic 1A
Y140
Y160
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2sA1186 transistor
Abstract: transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications
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Original
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2SA1186
-150V
2SC2837
2sA1186 transistor
transistor p100
2SA1186
Y130
Y-140
2SC2837
Y140
Y160
5060 transistor
2sc2837 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA908 DESCRIPTION • High Power Dissipation: Pc= 150W(Max.)@Tc=25°C • Collector-Emitter Breakdown Voltage: V(BR)CEo=-150V(Min.)
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Original
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2SA908
-150V
2SC1585
-50mA;
-150V;
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PDF
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