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    PNP TRANSISTOR 1A 60V Search Results

    PNP TRANSISTOR 1A 60V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP TRANSISTOR 1A 60V Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FMMT591TA

    Abstract: design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


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    FMMT591 500mW FMMT491 FMMT591TA D-81541 FMMT591TA design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


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    FMMT591 500mW FMMT491 FMMT591TA D-81541 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


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    ZXTD6717E6 OT23-6 Continuo725 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.


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    2SB1260 2SB1260 OT-89 2SB1260L 2SB1260-AB3-R 2SB1260L-AB3-R OT-89 QW-R208-017 PDF

    2SB1260

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.


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    2SB1260 2SB1260 2SB1260L 2SB1260G 2SB1260-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-AB3-R 2SB1260L-x-TN3-R 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R PDF

    transistor 1012 TO252

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


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    2SB1260 2SB1260 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T OT-89 transistor 1012 TO252 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.


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    2SB1260 2SB1260 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R OT-89 O-252 QW-R208-017 PDF

    2SB1260

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


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    2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89


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    2SB1260 2SB1260 OT-89 100ms QW-R208-017 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89


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    2SB1260 2SB1260 OT-89 QW-R208-017 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.


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    2SB1260 2SB1260 OT-89 O-252 2SB1260L 2SB1260-x-AB3-F-R 2SB1260L-x-AB3-F-R 2SB1260-x-TN3-F-R 2SB1260L-x-TN3-F-R 2SB1260-x-TN3-F-T PDF

    transistor P39

    Abstract: MOSFET 4446 ZXTP2039FTC ZXTN2038F ZXTP2039F ZXTP2039FTA
    Text: ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor Summary V BR CEV > -80V V(BR)CEO > -60V Ic(cont) = -1A Vce(sat) < -600mV @ -1A Complementary type ZXTN2038F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    ZXTP2039F -600mV ZXTN2038F ZXTP2039FTA ZXTP2039FTC transistor P39 MOSFET 4446 ZXTP2039FTC ZXTN2038F ZXTP2039F ZXTP2039FTA PDF

    ZXTP19060CG

    Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
    Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


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    ZXTP19060CG OT223 -80mV ZXTN19060CG OT223 ZXTP19060CGTA D-81541 ZXTP19060CG TS16949 ZXTN19060CG ZXTP19060CGTA PDF

    ZXTN19060CZ

    Abstract: TS16949 ZXTP19060CZ ZXTP19060CZTA
    Text: ZXTP19060CZ 60V PNP medium transistor in SOT89 Summary BVCEO > -60V BVECO > -7V IC cont = 4.5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 2.4W Complementary part number ZXTN19060CZ Description C Packaged in the SOT89 outline this new low saturation PNP transistor


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    ZXTP19060CZ -80mV ZXTN19060CZ ZXTP19060CZTA D-81541 ZXTN19060CZ TS16949 ZXTP19060CZ ZXTP19060CZTA PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 60V IC = 1A high Continuous Current Low saturation voltage VCE sat < 500mV @ 1A Complementary PNP Type: FZT591


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    FZT491 OT223 500mV FZT591 AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS33135 PDF

    MARKING SMD PNP TRANSISTOR R

    Abstract: MARKING SMD TRANSISTOR P SMD TRANSISTOR MARKING BE BE MARKING bvceo MARKING SMD PNP TRANSISTOR 2SB1260
    Text: Transistors SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE sat . Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit


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    2SB1260 100ms -500mA -50mA 30MHz MARKING SMD PNP TRANSISTOR R MARKING SMD TRANSISTOR P SMD TRANSISTOR MARKING BE BE MARKING bvceo MARKING SMD PNP TRANSISTOR 2SB1260 PDF

    smd transistor 718

    Abstract: CS8121 CS8121YDPS7 CS8121YDPSR7 CS8121YT5 CS8121YTFVA5 CS8121YTHA5 CS8121YTVA5 1A 5v voltage regulator with reset function SMD transistor 168
    Text: CS8121 CS8121 5V, 1A Linear Regulator with RESET and ENABLE Description The CS8121 is a 5V, 1A precision linear regulator with two microprocessor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout voltage


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    CS8121 CS8121 CS8121YT5 CS8121YTVA5 CS8121YTHA5 CS8121YTFVA5 CS8121YDPS7 CS8121YDPSR7 smd transistor 718 CS8121YDPS7 CS8121YDPSR7 CS8121YT5 CS8121YTFVA5 CS8121YTHA5 CS8121YTVA5 1A 5v voltage regulator with reset function SMD transistor 168 PDF

    Untitled

    Abstract: No abstract text available
    Text: CS8121 CS8121 5V, 1A Linear Regulator with RESET and ENABLE Description The CS8121 is a 5V, 1A precision linear regulator with two microprocessor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout voltage


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    CS8121 CS8121 CS8121YT5 CS8121YTVA5 CS8121YTHA5 CS8121YDPS7 CS8121YDPSR7 O-220 PDF

    CS8121

    Abstract: CS8121YDPS7 CS8121YDPSR7 CS8121YT5 CS8121YTHA5 CS8121YTVA5 CAPACITOR VALUE TABLE
    Text: CS8121 CS8121 5V, 1A Linear Regulator with RESET and ENABLE Description The CS8121 is a 5V, 1A precision linear regulator with two microprocessor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout voltage


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    CS8121 CS8121 CS8121YT5 CS8121YTVA5 CS8121YTHA5 CS8121YDPS7 CS8121YDPSR7 O-220 CS8121YDPS7 CS8121YDPSR7 CS8121YT5 CS8121YTHA5 CS8121YTVA5 CAPACITOR VALUE TABLE PDF

    smd transistor 718

    Abstract: No abstract text available
    Text: CS8121 CS8121 5V, 1A Linear Regulator with RESET and ENABLE Description The CS8121 is a 5V, 1A precision linear regulator with two microprocessor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout voltage


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    CS8121 CS8121 CS8121YT5 CS8121YTVA5 CS8121YTHA5 CS8121YTFVA5 CS8121YDPS7 CS8121YDPSR7 smd transistor 718 PDF

    M.P transistor

    Abstract: CS-8121DP7 CS-8121T5 CS-8121TF5 CS-8121TH5 CS-8121TV5 MA5470 CS-8121 14Vdc
    Text: CS-8121 CS-8121 5V, 1A Linear Regulator with RESET and ENABLE Description The CS-8121 is a 5V, 1A precision linear regulator with two microprocessor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout voltage


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    CS-8121 CS-8121 27ref 050ref) 50ref 75ref CS-8121T5 CS-8121TV5 M.P transistor CS-8121DP7 CS-8121T5 CS-8121TF5 CS-8121TH5 CS-8121TV5 MA5470 14Vdc PDF

    CS8121S

    Abstract: CS-8121TF5 CS-8121TH5 CS-8121TV5
    Text: CS-8121 5A, 1A Linear Regulator with RESET and ENABLE Features Description The CS-8121 is a 5V, 1A precision linear regulator with two microprocessor compatible control functions and protection circuitry included on chip. The composite NPN-PNP output pass transistor assures a lower dropout voltage


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    CS-8121 CS-8121 O-220 O-220 CD-8121T5 CS-8121TV5 CS-8121TH5 CS8121S CS-8121TF5 CS-8121TH5 CS-8121TV5 PDF

    KTA708

    Abstract: KTC1008 transistor KTC1008
    Text: SEMICONDUCTOR KTA708 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B C FEATURES A ᴌHigh Voltage : VCEO=-60V Min. . ᴌHigh Current : IC(Max.)=-1A. ᴌHigh Transition Frequency : fT=150MHz(Typ.). N K


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    KTA708 150MHz KTC1008. KTA708 KTC1008 transistor KTC1008 PDF

    2SA684R

    Abstract: 2SA684 2SA684 R 2SC1384L 2SA684 S 2sa684-q D 1380 Transistor PNP TRANSISTOR 1A 60V TRANSISTOR 2sa684
    Text: 2SA684 -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92L FEATURE G Automatic insertion by radial taping possible. Complementary pair with 2SC1384L. H 1Emitter


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    2SA684 O-92L 2SC1384L. 2SA684-Q 2SA684-R 2SA684-S -500mA, -50mA 2SA684R 2SA684 2SA684 R 2SC1384L 2SA684 S 2sa684-q D 1380 Transistor PNP TRANSISTOR 1A 60V TRANSISTOR 2sa684 PDF