2SC1419
Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.
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MJE350
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2SC1419
TIP54
MJ1000
MJ15024 MJ15025
2SC1943
SE9302
MJE2482
2SD675
BU326
BU108
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BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD166
BD165
BD166
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BUS48AP
2SC1381
mje15033 replacement
2SA698
BD477
BD139.16
2N307
2SC1224
2SD549
BD139.10
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PDF
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BU108
Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD180
BD179
BD180
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BU108
2SD1816
BDX54
motorola MJ3000
MJD42C equivalent
BU326
BU100
2N5631
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PDF
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MJ4502 EQUIVALENT
Abstract: BU108 BU806 Complement BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A
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MJ4502
MJ802
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
MJ4502 EQUIVALENT
BU108
BU806 Complement
BDX54
BU326
BU100
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PDF
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2N5037
Abstract: 2SC1903 2SC2159 mje15033 replacement bd7782 MJE2050 SDT7605 2SA835 BD279 svt6251
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi
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BD808
BD810*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N5037
2SC1903
2SC2159
mje15033 replacement
bd7782
MJE2050
SDT7605
2SA835
BD279
svt6251
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PDF
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zt751
Abstract: TRANSISTOR zt751 onsemi SOT-223 PZT651T1 PZT751T1 PZT751T3 SMD310
Text: ON Semiconductort PZT751T1 PNP Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface
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PZT751T1
PZT751T1
inch/100lit
r14525
PZT751T1/D
zt751
TRANSISTOR zt751
onsemi SOT-223
PZT651T1
PZT751T3
SMD310
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PDF
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MJD127G
Abstract: No abstract text available
Text: MJD122, NJVMJD122 NPN , MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR
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MJD122,
NJVMJD122
MJD127,
NJVMJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
MJD127G
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PDF
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zt751
Abstract: TRANSISTOR zt751
Text: ON Semiconductort PZT751T1 PNP Silicon Planar Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface
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PZT751T1
inch/1000
PZT751T3
inch/4000
PZT65
r14525
PZT751T1/D
zt751
TRANSISTOR zt751
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PDF
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tip122 tip127 audio amp
Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power
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MJ3281A
MJ1302A
MJ3281A*
MJ1302A*
204AA
TIP73B
TIP74
TIP74A
TIP74B
TIP75
tip122 tip127 audio amp
BU108
K 3569
D44H1
tip120
MJ1302A equivalent
2SB595
BDX54
BU326
BU100
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PDF
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MJD122
Abstract: TIP125-TIP127 mjd122g
Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com SILICON POWER TRANSISTOR 8 AMPERES
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MJD122,
NJVMJD122T4G
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
MJD122
mjd122g
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PDF
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Untitled
Abstract: No abstract text available
Text: MJD122, NJVMJD122T4G NPN , MJD127 (PNP) Complementary Darlington Power Transistor http://onsemi.com DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features SILICON POWER TRANSISTOR 8 AMPERES
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MJD122,
NJVMJD122T4G
MJD127
2N6040â
2N6045
TIP120â
TIP122
TIP125â
TIP127
MJD122/D
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PDF
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sec tip41c
Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A* Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power
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MJL3281A
MJL1302A
MJL3281A*
MJL1302A*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
sec tip41c
MJE493
2SC1419
2sc3281
2n3055 audio output circuit
BDW93
MJ1000
BDW83
buv98a cross reference
2SC1943
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA
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MJD210
500mA
QW-R213-001
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA
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MJD210
500mA
QW-R213-001
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PDF
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100 amp npn darlington power transistors
Abstract: MJD127T4G NPN Silicon Power Transistor DPAK TIP125 G 2N6040 2N6045 MJD122 MJD122T4 MJD127 TIP120
Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS
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MJD122
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
100 amp npn darlington power transistors
MJD127T4G
NPN Silicon Power Transistor DPAK
TIP125 G
2N6040
2N6045
MJD122
MJD122T4
MJD127
TIP120
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PDF
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tip120tip122
Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features
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MJD122
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
tip120tip122
2N6040
2N6045
MJD122
MJD122G
MJD127
TIP120
TIP122
TIP125
TIP127
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PDF
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TIP125-TIP127
Abstract: TIP120-TIP122 2N6040-2N6045 MJD122G MJD122T4G MJD127G 2N6040 2N6045 MJD122 MJD127
Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features
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MJD122
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122G
MJD122T4G
MJD127G
2N6040
2N6045
MJD122
MJD127
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PDF
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MJD127T4
Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125
Text: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features
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MJD122
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
MJD127T4
npn darlington transistor 150 watts
2N6040
2N6045
MJD122
MJD122G
MJD127
TIP120
TIP122
TIP125
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PDF
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MJD210
Abstract: MJD210L-TN3-R
Text: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1 *Collector-Emitter Sustaining Voltage
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MJD210
O-252
MJD210
-10mA
-500mA
QW-R213-001
MJD210L-TN3-R
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PDF
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MJD210L-TN3-R
Abstract: 1N5825 MJD210 MJD210L
Text: UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1 *Collector-Emitter Sustaining Voltage
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MJD210
O-252
MJD210
500mA
QW-R213-001
MJD210L-TN3-R
1N5825
MJD210L
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PDF
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PART NUMBER OF PNP 2A DPAK
Abstract: No abstract text available
Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA
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MJD210
MJD210
500mA
QW-R209-019
PART NUMBER OF PNP 2A DPAK
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BC237
Abstract: bc547 marking transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power
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416/SC
inch/3000
2SA1774
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
bc547 marking transistor
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PDF
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MJD127T4G
Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS
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MJD122
MJD127
2N6040-2N6045
TIP120-TIP122
TIP125-TIP127
MJD122/D
MJD127T4G
2N6040
2N6045
MJD122
MJD122G
MJD127
TIP120
TIP122
TIP125
TIP127
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PDF
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MJE371 equivalent
Abstract: MJ13019 ST BDW83C BU108 transistor d 1557 mje521 equivalent transistor 2N6546 2N3713 MOTOROLA BDX36 equivalent IR-6062
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE371 Plastic Medium-Power PNP Silicon Transistors 4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry
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MJE371
MJE521
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
MJE371 equivalent
MJ13019
ST BDW83C
BU108
transistor d 1557
mje521 equivalent transistor
2N6546
2N3713 MOTOROLA
BDX36 equivalent
IR-6062
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PDF
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