Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PNP MOSFET Search Results

    PNP MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    PNP MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM201MN KSD-T6T002-000

    Logic Level Gate Drive mosfet

    Abstract: BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM201MN KSD-T6T002-000 Logic Level Gate Drive mosfet BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v

    Untitled

    Abstract: No abstract text available
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM201MN KSD-T6T002-001

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM202MN KSD-T6T001-002

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM202MN KSD-T6T001-001

    12V 10A BJT

    Abstract: Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM202MN KSD-T6T001-001 12V 10A BJT Logic Level Gate Drive mosfet SUM202MN SUM202 BJT IC Vce power BJT PNP BJT pnp 45V Drive Base BJT Low Capacitance bjt BJT IC Vce 5v

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM202MN KSD-T6T001-001

    smd "marking codes" c9

    Abstract: smd codes marking c9 PBSS302ND PBSS302PD A1175
    Text: PBSS302PD 40 V PNP low VCEsat BISS transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.


    Original     		PDF PBSS302PD OT457 SC-74) PBSS302ND smd "marking codes" c9 smd codes marking c9 PBSS302ND PBSS302PD A1175

    PBSS4440D

    Abstract: PBSS5440D NXP SMD mosfet MARKING CODE
    Text: PBSS5440D 40 V PNP low VCEsat BISS transistor Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.


    Original     		PDF PBSS5440D OT457 SC-74) PBSS4440D. PBSS5440D PBSS4440D NXP SMD mosfet MARKING CODE

    marking code A09 SMD Transistor

    Abstract: No abstract text available
    Text: PBSS5440D 40 V PNP low VCEsat BISS transistor Rev. 02 — 14 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.


    Original     		PDF PBSS5440D OT457 SC-74) PBSS4440D. PBSS5440D marking code A09 SMD Transistor

    IC 14511

    Abstract: IC 14511 datasheet 14511 PBSS4440D PBSS5440D
    Text: PBSS5440D 40 V PNP low VCEsat BISS transistor Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.


    Original     		PDF PBSS5440D OT457 SC-74) PBSS4440D IC 14511 IC 14511 datasheet 14511 PBSS4440D PBSS5440D

    smd "marking codes" c9

    Abstract: 113 marking code PNP transistor smd codes marking c9 TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE SP PBSS302ND PBSS302PD MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 18
    Text: PBSS302PD 40 V PNP low VCEsat BISS transistor Rev. 01 — 18 April 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package.


    Original     		PDF PBSS302PD OT457 SC-74) PBSS302ND smd "marking codes" c9 113 marking code PNP transistor smd codes marking c9 TRANSISTOR SMD MARKING CODES TRANSISTOR SMD MARKING CODE SP PBSS302ND PBSS302PD MARKING CODE SMD IC TRANSISTOR SMD MARKING CODE 18

    sop8901

    Abstract: No abstract text available
    Text: SOP8901 Ordering number : ENN8199 SOP8901 PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications Features • Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting.


    Original     		PDF OP8901 ENN8199 sop8901

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2x2-6L-U Power Management Transistors- MOSFET CJMNT32 PNP Power Transistor with N-MOSFET DESCRIPTIONS The CJMNT32 is PNP bipolar power transistor with 20V N-MOSFET.This device is suitable for use in charging


    Original     		PDF CJMNT32 CJMNT32 600mA 250uA

    Untitled

    Abstract: No abstract text available
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD459Fax:

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2x2-6L-U Power Management Transistors- MOSFET CJMNT32 PNP Power Transistor with N-MOSFET DESCRIPTIONS The CJMNT32 is PNP bipolar power transistor with 20V N-MOSFET.This device is suitable for use in charging


    Original     		PDF CJMNT32 CJMNT32 100KHz 500mA

    MCH6931

    Abstract: No abstract text available
    Text: MCH6931 Ordering number : ENN8037 MCH6931 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6931 ENN8037 MCH6931

    MCH6937

    Abstract: No abstract text available
    Text: MCH6937 Ordering number : ENN8040 MCH6937 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6937 ENN8040 MCH6937

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2  Structure Silicon P-channel MOSFET/ PNP TRANSISTOR Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).


    Original     		PDF Pw10s, R1120A

    pdf datasheet of ic 8038

    Abstract: ic 8038 ic 8038 APPLICATIONS MCH6933
    Text: MCH6933 Ordering number : ENN8038 MCH6933 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6933 ENN8038 pdf datasheet of ic 8038 ic 8038 ic 8038 APPLICATIONS MCH6933

    UP1868

    Abstract: UP1868-AA3-F-R UP1868L-AA3-F-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1868 PNP SILICON TRANSISTOR LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ FEATURES * Low saturation voltage with equivalent on-resistance be RCE SAT about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET.


    Original     		PDF UP1868 UP1868L UP1868-AA3-F-R UP1868L-AA3-F-R OT-223 QW-R207-015 UP1868 UP1868-AA3-F-R UP1868L-AA3-F-R

    complementary npn-pnp

    Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD4591E6TA complementary npn-pnp dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748

    MCH6935

    Abstract: No abstract text available
    Text: MCH6935 Ordering number : ENN8039 MCH6935 TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch Applications Features • • Composite type with a PNP transistor and a N-ch MOSFET contained in one package facilitating high-density


    Original     		PDF MCH6935 ENN8039 MCH6935

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 1.5V Drive Pch MOSFET + PNP TRANSISTOR QS8F2  Structure Silicon P-channel MOSFET/ PNP TRANSISTOR Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(1.5V drive).


    Original     		PDF Pw10s, R1120A