BC858S
Abstract: BC848S BC846S BC856S BC857S
Text: BC856S . BC858S PNP General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-04-09 Dimensions / Maße in mm 2±0.1 5 2 2.1 Type Code 1 Plastic case Kunststoffgehäuse
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BC856S
BC858S
UL94V-0
OT-363
BC846S
BC848S
BC858S
BC848S
BC846S
BC856S
BC857S
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PDF
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BC846S
Abstract: BC856S BC857S BC858S
Text: BC856S . BC859S BC856S . BC859S Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage PNP PNP Version 2006-08-01 2±0.1 2 x 0.65 5 Type Code 1 2 1.25±0.1 4 2.1±0.1 6 0.9±0.1
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Original
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BC856S
BC859S
OT-363
UL94V-0
BC846S
BC849S
BC846S
BC856S
BC857S
BC858S
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PDF
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MARKING CODE 13t sot363
Abstract: transistor marking T2 transistor bt2 sot363 13t 13t transistor BC847PN marking 13t MARKING bt1 sot363 BC847PN SOT363 SOT363 13T MARKING
Text: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 2 2 x 0.65 4 1 2 2.1 Type Code 1.25±0.1 5 ±0.1 6 0.9±0.1 3 2.4
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Original
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BC847PN
OT-363
UL94V-0
MARKING CODE 13t sot363
transistor marking T2
transistor bt2
sot363 13t
13t transistor
BC847PN
marking 13t
MARKING bt1 sot363
BC847PN SOT363
SOT363 13T MARKING
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Untitled
Abstract: No abstract text available
Text: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 5 4 ±0.1 6 ±0.1 0.9 1 2 2.1 Type Code 1.25±0.1 2 2 x 0.65 3 2.4
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Original
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BC847PN
OT-363
UL94V-0
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PDF
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BC846S
Abstract: BC856S BC857S BC858S
Text: BC856S . BC859S BC856S . BC859S Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage PNP PNP Version 2006-08-01 ±0.1 2 x 0.65 5 4 ±0.1 6 0.9±0.1 2 2.1 Type Code 1 1.25±0.1
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Original
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BC856S
BC859S
OT-363
UL94V-0
BC846S
BC849S
BC846S
BC856S
BC857S
BC858S
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PDF
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marking ML5
Abstract: 2SB977 2SB977A 2SC1547 2SD893 PG-25 ML5 marking 2SB970 2SD893A IS020
Text: PANASONIC INDL/ELEK-CSEfll} 7EC V | ^ 3 5 0 5 4 □GD1GD4 7 | ~ h ^ ^ T / 5 ? _ *_ 2SB970 2SB970 '> ij zj > PNP öl tf £ '> t Ji/Z?I s - j - f î t / S i PNP Epitaxial Planar fSISEEiÜ^jittififfl/AF Output Amplifier
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OCR Scan
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2SB970
f-800MHz
40MHz
800MHz
Re-68011
Ta-25
marking ML5
2SB977
2SB977A
2SC1547
2SD893
PG-25
ML5 marking
2SB970
2SD893A
IS020
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PDF
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SC46D
Abstract: 2SB1064
Text: h7 > 5 / T ransistors 2SB1064 2SB1064 PNP '> > ;= !> h 7 > y X $ Epitaxial Planar PNP Silicon Transistor fé J ii& ^ ^ J iâ ÎïW L o w Freq. Power Amp. • Dimensions Unit: mm 1) VcE(sat) ¿»'"fé'-'o 4. 5 ± 0.? r V c E (s a t)= -0 .5 V (T y p .) ¿3.6±0.2
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OCR Scan
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2SB1064
2SD1505
2SD1505.
O-220
SC-46
SC46D
2SB1064
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PDF
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BFR 450
Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95
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OCR Scan
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BFR10
BFR36
BFR96*
97/2N
98/BFX
BFX18
BFR 450
BFW64
tpl 550
BFW17A
BFR38
BFW63
BFX19
BFT95H
BFR96
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PDF
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BFR 450
Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95
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OCR Scan
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BFR10
BFR36
BFR96*
97/2N
BFR16
BFX31
BFX37
BFW43
BFW44
BFX90
BFR 450
BFY 93
bft95
BFw 94
BFR96
BFT95H
BFW16A
BFW17A
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PDF
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d 1879 TRANSISTOR
Abstract: transistor D 1666 BFQ23C transistor d 1557 BFP91A B 1449 transistor TRANSISTOR D 471
Text: Philips Sem Product specification “^ 3 / — / f PNP 5 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE ]> • BFQ23C 711Gfl5b 0 D M S 4 1 0 S41 PINNING PNP transistor in
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OCR Scan
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BFP91A.
BFQ23C
711Gfl5b
d 1879 TRANSISTOR
transistor D 1666
BFQ23C
transistor d 1557
BFP91A
B 1449 transistor
TRANSISTOR D 471
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PDF
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2N5415
Abstract: No abstract text available
Text: r 7 z Ä T# S G S - m o M S O 2 N N 5 4 1 5 2N 5416 [M O g fô l[L[ie ra ® *S SILICON PNP TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . PNP TRANSISTOR DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39
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OCR Scan
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2N5415,
2N5416
2N5415
/2N5416
P008B
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PDF
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2sb1355
Abstract: cub vc 150 2sd2035
Text: h 7 > y ^ ^ /Transistors 2SB1355 x k° 7 i y a[y—r m PNP > U =3> K Epitaxial Planar PNP Silicon Transistor fëü)j£11:ftiSlfiffl/Low Freq. Power Amp. 2 S B 1 3 5 5 • ÿ+Jfi vfüEI/Dimensions Unit : mm) 1) VCE (sat)¿'‘'f i t 'o Vce (sat)= —0.5V (Typ.)
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OCR Scan
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2SB1355
2SD2035
2SD2035.
2SB1355
cub vc 150
2sd2035
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PDF
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2SA881
Abstract: 2sc4040 2SC2673
Text: 2SA881 /2SA1560 h 7 > y ^ 5 /Transistors 2SA881 2SA 1560 I k f£ PNP ' > U 3 > h 7 > V ^ ^ Epitaxial Planar PNP Silicon Transistors 4 ,^ ^ J i§ ltiffl/Medium Power Amp. 5 • w * : V T \ s — • ii- J f^ > i0 / D im e n s io n s U n it: mm 1) /Jv$)FTRA v
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OCR Scan
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2SA881
/2SA1560
--500mA/--50mA)
2SC2673/2SC4040
600mW
2SC2673,
2SC4040.
--100mA
2sc4040
2SC2673
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PDF
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8D438
Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
Text: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary
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OCR Scan
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b3b7E54
BD434,
BD436
BD438,
BD440
BD442
BD433/435/437/439/441.
8D438
8D442
8D436
D442
SD436
TRANSISTOR BD 437
BD transistor
BD 35 transistor
BD434
BD436 MOTOROLA
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PDF
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2SB1436
Abstract: No abstract text available
Text: h 7 > y ^ ^ /Transistors 2SB1436 2SB1436 1 1°$ * '> TJl>y Is - +M PNP y V □ > K ÿ > y 7. $ Epitaxial Planar PNP Silicon Transistor ‘l£J§ J&5^iÖlH ffl/Lo w Freq. Power Amp. N P 7 7 7 s> =lffl/Strobo Flash • W f i\ f 5 il2 l/ D im e n s io n s U n it : mm)
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OCR Scan
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2SB1436
2SB1436
O-126FP
100MHz
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PDF
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AFY18
Abstract: AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1
Text: AFY18 PNP Mesa transistor for antenna amplifiers up to 250 MHz The AFY18 is a germanium PNP RF epitaxial mesa transistor in a case 5 C3 DIN 41 873 TO -39 . The collector is electrically connected to the case. The A F Y 18 is designed for antenna amplifiers up to 250 MHz.
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OCR Scan
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AFY18
AFY18
Q60106-Y18-
AFY18E
AFY18D
germanium mesa transistor pnp
Germanium Transistor
afy1
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PDF
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MPS-H83
Abstract: TRANSISTOR 2SC 950 2SC 1068
Text: MPS-H83 silicon PNP S IL IC O N A N N U L A R PNP S IL IC O N U H F T R A N S IS T O R S T R A N S IS T O R S designed for common-base U H F R F amplifier applications. Guaranteed Noise Figure — N F = 4.2 dB (Typ) @ f = 8 5 0 M H z Guaranteed Forward A G C Characteristics
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OCR Scan
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MPS-H83
MPS-H83
TRANSISTOR 2SC 950
2SC 1068
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PDF
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sc 3198 transistor
Abstract: 2N6315 2N6317 2N6318 2N6316 8002 Amplifier IC
Text: MOTOROLA SC 6367254 {XSTRS/R T t. F> MOTOROLA SC XSTRS/R F D F |b 3 b 7 5 5 4 O D ñ D 4 b 4 ^ ^ |_ 96D 80464 D_ - T - 3 3 - / 3 NPN MOTOROLA 7 er 3 2N6315, 2N6316 SEM ICO NDUCTO R PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON
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OCR Scan
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T-33-/
2N6315,
2N6316
2N6317,
2N6318
2N631S
2N6317
2N6316
2N6318
sc 3198 transistor
2N6315
8002 Amplifier IC
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PDF
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2SA666
Abstract: 2SA666A
Text: 2SA666, 2SA666A 2SA66Ó, 2SA6ÓÓA v ' J a > PNP xH"^4:vTJU7'U'—M Ü /Si PNP Epitaxial Planar féJ3S£féü;i 1iîÎll lffl/'A F Low Noise Amplifier 4# & ' /F e a tu re s • H ÏFftîfc NF • U n it : mm 4. lm ax. 5. lmax. noise figure Low hFE ¿V * £ w /H ig h hFE
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OCR Scan
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2SA666,
2SA666A
2SA666
2SA666
2SA666A
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PDF
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BT 815 transistor
Abstract: Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108
Text: NEC l i f A I / 1] Silicon Tran sistor i i f X 2SA1625 PNP = S il£ i PNP Silicon Triple Diffused Transistor High Speed, High Voltage Switching mm O i^ ii E t 'C 'i'o V Ce o = - 4 0 0 ^ -fi • mm V V CE(sat)^ - 0 .5 V O T A 7 f s tf — 1 . 0 (T a — m
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OCR Scan
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2SA1625
PWS300
SC-43B
BT 815 transistor
Transistor BFR 96
pt 4115
2SA1625
PA33
T108
X108
ih 0565 r
EI 33
LX108
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PDF
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transistor sc 238
Abstract: T-33-H transistor motorola 236 transistor sc 236 B023S BD234 BD236 BD238
Text: MOTOROLA SC -CXSTRS/R 6367254 F> "Tb MOTOROLA SC b 3ti7SS4 0000575 96D 8 0 5 7 5 XSTRS/_R.F D BD234 BD236 BD238 MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR PNP SILICON . . . d esigned for use in 5 to 1 0 W att audio amplifiers and drivers
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OCR Scan
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BD234
BD236
BD238
transistor sc 238
T-33-H
transistor motorola 236
transistor sc 236
B023S
BD238
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PDF
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BC441
Abstract: BC461 BC441 transistor bc46 BC440 BC460
Text: BC460 BC461 BC440 BC441 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES - ^ 5» F o r f y n p < e ,ic e l- v o l la 9 e a n d C u r r m valu e s a r e negati««. BC440 NPN) BC460(PNP) BC441(NPN) BC46l(PNP) Collector-Emitter Voltage {RBE<100.n-)
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OCR Scan
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BC440
BC441
BC460
BC461
BC440,
BC441Â
bc46o,
BC441
BC461
BC441 transistor
bc46
BC460
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PDF
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transistor sc 236
Abstract: transistor sc 238
Text: MOTOROLA SC -CXSTRS/R 6367254 F> MOTOROLA "Tb SC CXSTRS/R DE I L.3L.7ES4 96D F 80575 D BD234 BD236 BD238 MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC M ED IU M POWER SILICON PNP TRANSISTOR PNP SILICON . . . designed for use in 5 to 10 Watt audio amplifiers and drivers
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OCR Scan
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BD234
BD236
BD238
transistor sc 236
transistor sc 238
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PDF
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2SA933LN
Abstract: No abstract text available
Text: 2SA933LN/2SA933SLN h ~7 > 'S Z 5? /T r a n s is to r s 2SA933LN 2SA933SLN i t PNP Freq. Low Noise Amp. Epitaxial Planar PNP Silicon Transistors • ÿfJfÿ^iÉ H /D im en sio ns Unit : mm 1) P - y - f X V & S o N F = 0.5dB Typ. (at VCE = —5V, lc = —100 mA,
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OCR Scan
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2SA933LN/2SA933SLN
2SA933LN
2SA933SLN
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PDF
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