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    PNP F 5 MHZ Search Results

    PNP F 5 MHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CDP1805ACDX Rochester Electronics LLC Microprocessor, 8-Bit, 5MHz, CMOS, CDIP40 Visit Rochester Electronics LLC Buy
    P8085AH-2-G Rochester Electronics LLC P8085 - Microprocessor, 8-Bit, 5MHz, NMOS, PDIP40 Visit Rochester Electronics LLC Buy
    P8085AH-2 Rochester Electronics LLC Microprocessor, 8-Bit, 5MHz, NMOS, PDIP40, PLASTIC, DIP-40 Visit Rochester Electronics LLC Buy
    P8086 Rochester Electronics LLC Microprocessor, 16-Bit, 5MHz, NMOS, PDIP40, PLASTIC, DIP-40 Visit Rochester Electronics LLC Buy

    PNP F 5 MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC858S

    Abstract: BC848S BC846S BC856S BC857S
    Text: BC856S . BC858S PNP General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Version 2004-04-09 Dimensions / Maße in mm 2±0.1 5 2 2.1 Type Code 1 Plastic case Kunststoffgehäuse


    Original     		PDF BC856S BC858S UL94V-0 OT-363 BC846S BC848S BC858S BC848S BC846S BC856S BC857S

    BC846S

    Abstract: BC856S BC857S BC858S
    Text: BC856S . BC859S BC856S . BC859S Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage PNP PNP Version 2006-08-01 2±0.1 2 x 0.65 5 Type Code 1 2 1.25±0.1 4 2.1±0.1 6 0.9±0.1


    Original     		PDF BC856S BC859S OT-363 UL94V-0 BC846S BC849S BC846S BC856S BC857S BC858S

    MARKING CODE 13t sot363

    Abstract: transistor marking T2 transistor bt2 sot363 13t 13t transistor BC847PN marking 13t MARKING bt1 sot363 BC847PN SOT363 SOT363 13T MARKING
    Text: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 2 2 x 0.65 4 1 2 2.1 Type Code 1.25±0.1 5 ±0.1 6 0.9±0.1 3 2.4


    Original     		PDF BC847PN OT-363 UL94V-0 MARKING CODE 13t sot363 transistor marking T2 transistor bt2 sot363 13t 13t transistor BC847PN marking 13t MARKING bt1 sot363 BC847PN SOT363 SOT363 13T MARKING

    BC846S

    Abstract: BC856S BC857S BC858S
    Text: BC856S . BC859S BC856S . BC859S Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren für die Oberflächenmontage PNP PNP Version 2006-08-01 ±0.1 2 x 0.65 5 4 ±0.1 6 0.9±0.1 2 2.1 Type Code 1 1.25±0.1


    Original     		PDF BC856S BC859S OT-363 UL94V-0 BC846S BC849S BC846S BC856S BC857S BC858S

    marking ML5

    Abstract: 2SB977 2SB977A 2SC1547 2SD893 PG-25 ML5 marking 2SB970 2SD893A IS020
    Text: PANASONIC INDL/ELEK-CSEfll} 7EC V | ^ 3 5 0 5 4 □GD1GD4 7 | ~ h ^ ^ T / 5 ? _ *_ 2SB970 2SB970 '> ij zj > PNP öl tf £ '> t Ji/Z?I s - j - f î t / S i PNP Epitaxial Planar fSISEEiÜ^jittififfl/AF Output Amplifier


    OCR Scan     		PDF 2SB970 f-800MHz 40MHz 800MHz Re-68011 Ta-25 marking ML5 2SB977 2SB977A 2SC1547 2SD893 PG-25 ML5 marking 2SB970 2SD893A IS020

    SC46D

    Abstract: 2SB1064
    Text: h7 > 5 / T ransistors 2SB1064 2SB1064 PNP '> > ;= !> h 7 > y X $ Epitaxial Planar PNP Silicon Transistor fé J ii& ^ ^ J iâ ÎïW L o w Freq. Power Amp. • Dimensions Unit: mm 1) VcE(sat) ¿»'"fé'-'o 4. 5 ± 0.? r V c E (s a t)= -0 .5 V (T y p .) ¿3.6±0.2


    OCR Scan     		PDF 2SB1064 2SD1505 2SD1505. O-220 SC-46 SC46D 2SB1064

    BFR 450

    Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
    Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95


    OCR Scan     		PDF BFR10 BFR36 BFR96* 97/2N 98/BFX BFX18 BFR 450 BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR96

    BFR 450

    Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
    Text: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95


    OCR Scan     		PDF BFR10 BFR36 BFR96* 97/2N BFR16 BFX31 BFX37 BFW43 BFW44 BFX90 BFR 450 BFY 93 bft95 BFw 94 BFR96 BFT95H BFW16A BFW17A

    2N5415

    Abstract: No abstract text available
    Text: r 7 z Ä T# S G S - m o M S O 2 N N 5 4 1 5 2N 5416 [M O g fô l[L[ie ra ® *S SILICON PNP TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . PNP TRANSISTOR DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39


    OCR Scan     		PDF 2N5415, 2N5416 2N5415 /2N5416 P008B

    2sb1355

    Abstract: cub vc 150 2sd2035
    Text: h 7 > y ^ ^ /Transistors 2SB1355 x k° 7 i y a[y—r m PNP > U =3> K Epitaxial Planar PNP Silicon Transistor fëü)j£11:ftiSlfiffl/Low Freq. Power Amp. 2 S B 1 3 5 5 • ÿ+Jfi vfüEI/Dimensions Unit : mm) 1) VCE (sat)¿'‘'f i t 'o Vce (sat)= —0.5V (Typ.)


    OCR Scan     		PDF 2SB1355 2SD2035 2SD2035. 2SB1355 cub vc 150 2sd2035

    8D438

    Abstract: 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA
    Text: MOTOROLA SC -CXSTRS/R “Tb FÏ 6 3 6 7 2 5 4 M O T O R O L A SC X S T R S / R F 96 D 80 596 TECHNICAL DATA D 7 r'i3-'/f 4 AMPERE POWER TRANSISTOR PNP SILICON PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR . . . for amplifier and switching applications Complementary


    OCR Scan     		PDF b3b7E54 BD434, BD436 BD438, BD440 BD442 BD433/435/437/439/441. 8D438 8D442 8D436 D442 SD436 TRANSISTOR BD 437 BD transistor BD 35 transistor BD434 BD436 MOTOROLA

    2SA1137

    Abstract: No abstract text available
    Text: h 7 > y ^ $ / T ransistors 2 S A 1 1 3 7 2SA1137 PNP v U = l > Voltage Low Freq. Low Noise Amp. Epitaxial Planar PNP Silicon Transistor • \ ';± 0 /D im e n s io n s Unit: mm) 1 ) S t ^ T * 5 0 N F=1 .OdB Typ. (at f=100H z, Rg= 5 0 0 Q , lc = —40 MA-3mA)


    OCR Scan     		PDF 2SA1137 100Hz, 2SA1137

    2SB1436

    Abstract: No abstract text available
    Text: h 7 > y ^ ^ /Transistors 2SB1436 2SB1436 1 1°$ * '> TJl>y Is - +M PNP y V □ > K ÿ > y 7. $ Epitaxial Planar PNP Silicon Transistor ‘l£J§ J&5^iÖlH ffl/Lo w Freq. Power Amp. N P 7 7 7 s> =lffl/Strobo Flash • W f i\ f 5 il2 l/ D im e n s io n s U n it : mm)


    OCR Scan     		PDF 2SB1436 2SB1436 O-126FP 100MHz

    AFY18

    Abstract: AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1
    Text: AFY18 PNP Mesa transistor for antenna amplifiers up to 250 MHz The AFY18 is a germanium PNP RF epitaxial mesa transistor in a case 5 C3 DIN 41 873 TO -39 . The collector is electrically connected to the case. The A F Y 18 is designed for antenna amplifiers up to 250 MHz.


    OCR Scan     		PDF AFY18 AFY18 Q60106-Y18- AFY18E AFY18D germanium mesa transistor pnp Germanium Transistor afy1

    sc 3198 transistor

    Abstract: 2N6315 2N6317 2N6318 2N6316 8002 Amplifier IC
    Text: MOTOROLA SC 6367254 {XSTRS/R T t. F> MOTOROLA SC XSTRS/R F D F |b 3 b 7 5 5 4 O D ñ D 4 b 4 ^ ^ |_ 96D 80464 D_ - T - 3 3 - / 3 NPN MOTOROLA 7 er 3 2N6315, 2N6316 SEM ICO NDUCTO R PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON


    OCR Scan     		PDF T-33-/ 2N6315, 2N6316 2N6317, 2N6318 2N631S 2N6317 2N6316 2N6318 sc 3198 transistor 2N6315 8002 Amplifier IC

    2SA666

    Abstract: 2SA666A
    Text: 2SA666, 2SA666A 2SA66Ó, 2SA6ÓÓA v ' J a > PNP xH"^4:vTJU7'U'—M Ü /Si PNP Epitaxial Planar féJ3S£féü;i 1iîÎll lffl/'A F Low Noise Amplifier 4# & ' /F e a tu re s • H ÏFftîfc NF • U n it : mm 4. lm ax. 5. lmax. noise figure Low hFE ¿V * £ w /H ig h hFE


    OCR Scan     		PDF 2SA666, 2SA666A 2SA666 2SA666 2SA666A

    BT 815 transistor

    Abstract: Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108
    Text: NEC l i f A I / 1] Silicon Tran sistor i i f X 2SA1625 PNP = S il£ i PNP Silicon Triple Diffused Transistor High Speed, High Voltage Switching mm O i^ ii E t 'C 'i'o V Ce o = - 4 0 0 ^ -fi • mm V V CE(sat)^ - 0 .5 V O T A 7 f s tf — 1 . 0 (T a — m


    OCR Scan     		PDF 2SA1625 PWS300 SC-43B BT 815 transistor Transistor BFR 96 pt 4115 2SA1625 PA33 T108 X108 ih 0565 r EI 33 LX108

    transistor sc 238

    Abstract: T-33-H transistor motorola 236 transistor sc 236 B023S BD234 BD236 BD238
    Text: MOTOROLA SC -CXSTRS/R 6367254 F> "Tb MOTOROLA SC b 3ti7SS4 0000575 96D 8 0 5 7 5 XSTRS/_R.F D BD234 BD236 BD238 MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR PNP SILICON . . . d esigned for use in 5 to 1 0 W att audio amplifiers and drivers


    OCR Scan     		PDF BD234 BD236 BD238 transistor sc 238 T-33-H transistor motorola 236 transistor sc 236 B023S BD238

    BC441

    Abstract: BC461 BC441 transistor bc46 BC440 BC460
    Text: BC460 BC461 BC440 BC441 COMPLEMENTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES - ^ 5» F o r f y n p < e ,ic e l- v o l la 9 e a n d C u r r m valu e s a r e negati««. BC440 NPN) BC460(PNP) BC441(NPN) BC46l(PNP) Collector-Emitter Voltage {RBE<100.n-)


    OCR Scan     		PDF BC440 BC441 BC460 BC461 BC440, BC441Â bc46o, BC441 BC461 BC441 transistor bc46 BC460

    transistor sc 236

    Abstract: transistor sc 238
    Text: MOTOROLA SC -CXSTRS/R 6367254 F> MOTOROLA "Tb SC CXSTRS/R DE I L.3L.7ES4 96D F 80575 D BD234 BD236 BD238 MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2 AM PERE POWER TRANSISTOR PLASTIC M ED IU M POWER SILICON PNP TRANSISTOR PNP SILICON . . . designed for use in 5 to 10 Watt audio amplifiers and drivers


    OCR Scan     		PDF BD234 BD236 BD238 transistor sc 236 transistor sc 238

    2SB1277

    Abstract: 2SB822
    Text: 2SB822/2SB1277 S "7 > v X $ /Transistors 2SB822 2SB 1277 PNP y ' j : i > h 7 > y 7 $ /Medium Power Amp. Epitaxial Planar PNP Silicon Transistors • 1 F T R A - y ^ - v I C T , Wffc\fi£|5|/D im ensio n s Unit : mm) Ic m = - 3 A , Pc=0.75W(7)^cttii! f ¿ S o


    OCR Scan     		PDF 2SB822/2SB1277 2SB822 200mV 2SD1055, 2SD1919. 2SB1277

    MJ480

    Abstract: 20-watt audio amplifier mj491 MJ481 20 watt audio amplifier 40-60VDC npn transistors,pnp transistors MJ490 MJ4911
    Text: MJ490 SILICON MJ491 PNP SI LICON POWER TRA N SISTO R S 4 A M PERE POWER TR A N SISTO R S . . . designed for general-purpose and 5 to 20 Watt audio amplifier applications. PNP SILICO N 40-60 V O LTS 87.5 WATTS • Current-Gain—Bandwidth Product f j = 4.0 MHz (Min) @ lc = 1.0 Adc


    OCR Scan     		PDF MJ490 MJ491 MJ480 MJ481 MJ490 MJ491 20-watt audio amplifier MJ481 20 watt audio amplifier 40-60VDC npn transistors,pnp transistors MJ4911

    NKT275

    Abstract: OC75 OC81DN OC72 OC78 NKT213 germanium transistors PNP oc75 oc76 ACY35 nkt 275
    Text: PNP Germanium Transistors PNP Germanium A F Alloy Transistors in T 0 1 metal case Common Characteristics fr Vc£ Cob <VC B = 6 V , \E = 0 •6 V , lc = 1mA) 1 MHz Characteristics at T amb = 2 5 °C Maximum ratings Type Low Noise Types 40 pF B V C fO V B V CSO


    OCR Scan     		PDF

    2SA817

    Abstract: 2SA817Y 2SA817-Y 2SC1627
    Text: 5/UD>PNPl£9*S/P;WBh^:/2tt5> PCTfiiC 2SA 817 ^ L IC O N PNP EPITAXIAL TENTATIVE o m m & m m m O «£EJtKSffl o Driver o Voltage Stage Amplifier Amplifier 2SC162? t ^ Applications Applications y ') 'JlCiilito 2O~2 5 f B 7 y 7 0 F 7 ^ ' - | t f a t t „ Complementary


    OCR Scan     		PDF 2SC1627 2SC1627 SC-43 2sa817 2SA817 2SA817Y 2SA817-Y