marking 705
Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA
Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at
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FCX705
OT223
marking 705
Zetex T 705
TRANSISTOR MARKING 705
FCX705
FCX705TA
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Untitled
Abstract: No abstract text available
Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at
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FCX705
OT223
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FCX705
Abstract: FCX705TA
Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at
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FCX705
OT223
FCX705
FCX705TA
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marking 1F7
Abstract: ZXTN04120HFF TS16949 ZXTP05120HFF ZXTP05120HFFTA
Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications
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ZXTP05120HFF
OT23F,
-120V
ZXTN04120HFF
ZXTP05120HFFTA
D-81541
marking 1F7
ZXTN04120HFF
TS16949
ZXTP05120HFF
ZXTP05120HFFTA
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Untitled
Abstract: No abstract text available
Text: ZXTP05120HFF 120V, SOT23F, PNP medium power Darlington transistor Summary BVCEO > -120V IC cont = -1A VCE(sat) < 1.1V @ 1A PD = 1.5W Complementary part number ZXTN04120HFF Description C This high performance PNP Darlington transistor is housed in the small outline SOT23 flat package for applications
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ZXTP05120HFF
OT23F,
-120V
ZXTN04120HFF
ZXTP05120HFFTA
D-81541
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Zetex T 705
Abstract: No abstract text available
Text: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUM M ARY V CEO=120V; V CE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at
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FCX705
OT223
Zetex T 705
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2SB1382
Abstract: transistor 12v 8A 2SD2082 pnp darlington VCE 120V
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)
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-120V
-16mA)
2SD2082
-16mA
-120V
-16mA,
2SB1382
transistor 12v 8A
2SD2082
pnp darlington VCE 120V
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2SB1105
Abstract: 2SD1605
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Complement to Type 2SD1605
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-120V
2SD1605
-30mA
-120V;
-100V;
2SB1105
2SD1605
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2SB1340
Abstract: 2SD1889
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS
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-120V
2SD1889
-120V
10MHz
2SB1340
2SD1889
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2sb1383
Abstract: 2sd2083 transistor IC 12A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083
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-120V
2SD2083
-24mA
-120V,
-24mA;
2sb1383
2sd2083
transistor IC 12A
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2sd2083
Abstract: 2SB1383 transistor 2sd2083 2sb1383 equivalent equivalent 2sb1383 transistor IC 12A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Complement to Type 2SD2083
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-120V
2SD2083
-24mA
-120V,
-24mA;
2sd2083
2SB1383
transistor 2sd2083
2sb1383 equivalent
equivalent 2sb1383
transistor IC 12A
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2SB1402
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min) ·High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS ·Designed for low frequency power amplifier applications.
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-120V
-30mA
-100V;
2SB1402
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PNP TRANSISTOR 1k
Abstract: transistor 20a COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS MJ11015 MJ11016
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage: VCE (sat)= -3.0V(Max.)@ IC= -20A
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-120V
MJ11016
-120V;
PNP TRANSISTOR 1k
transistor 20a
COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS
MJ11015
MJ11016
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2SB727
Abstract: 2SD768
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -3A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -3A
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-120V
2SD768
-60mA
-120V,
-100V;
2SB727
2SD768
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2SD864
Abstract: 2SB765
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -1.5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -1.5A
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-120V
2SD864
-30mA
-120V,
-100V,
2SD864
2SB765
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120v 10a transistor
Abstract: DARLINGTON -5A 100v pnp 2SB955 2SD1126
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= -5A ·Collector-Emitter Breakdown Voltage: V(BR)CEO = -120V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -5A
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-120V
2SD1126
-10mA
-120V,
-100V,
120v 10a transistor
DARLINGTON -5A 100v pnp
2SB955
2SD1126
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2SB1502 TRANSISTOR
Abstract: 2SB1502 2SD2275
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -4A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -4A ·Complement to Type 2SD2275 APPLICATIONS
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2SD2275
-120V;
-100V;
2SB1502 TRANSISTOR
2SB1502
2SD2275
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2SB1259
Abstract: 2sb125 2SD2081
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 2000 Min @ (VCE= -4V, IC= -5A) ·Large Current Capability ·Complement to Type 2SD2081 APPLICATIONS ·Driver for solenoid,relay and motor and general purpose
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2SD2081
-10mA
-120V;
2SB1259
2sb125
2SD2081
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STA408A
Abstract: sta400
Text: STA408A PNP Darlington General purpose Absolute maximum ratings External dimensions D Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)
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STA408A
STA400
STA408A
sta400
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STA308A
Abstract: sta308
Text: STA308A Absolute maximum ratings PNP Darlington General purpose External dimensions C Ta=25°C Specification min typ max Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)
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STA308A
STA308A
sta308
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STA308A
Abstract: sta308 STA300
Text: STA308A Absolute maximum ratings PNP Darlington General purpose External dimensions C Ta=25°C Specification min typ max Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)
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STA308A
STA300
STA308A
sta308
STA300
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SMA4030
Abstract: No abstract text available
Text: SMA4030 Absolute maximum ratings PNP Darlington General purpose External dimensions B Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 3 A hFE 2000 ICP 5 (PW≤1ms, Du≤50%) A VCE(sat) 1.1 1.5
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SMA4030
SMA4030
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2SB1502
Abstract: No abstract text available
Text: ^ , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SB1502 Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain: hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage: Vce(sat)= -2.5V(Max.)@lc= -4A
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2SB1502
2SD2275
-120V
2SB1502
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MJ11032
Abstract: MJ11033 transistor MJ11032
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -120V(Min.) ·High DC Current Gain: hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to Type MJ11032
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-120V
MJ11032
-250mA
500mA
-500mA
-120V;
MJ11032
MJ11033
transistor MJ11032
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