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    PNP BIPOLAR JUNCTION TRANSISTOR Search Results

    PNP BIPOLAR JUNCTION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    PNP BIPOLAR JUNCTION TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Semefab Scotland

    Abstract: semefab
    Text: PPS 159 High Voltage Bipolar Process Preview Datasheet Rev 1.0 June 2000 DESCRIPTION FEATURES The PPS 159 is an industry standard, very robust, junction isolated, bipolar process. It features vertical NPN and lateral PNP Bipolar transistors, implanted resistors and


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol


    Original     		PDF MMBT2131T1 MMBT2132T1/T3) AN569)

    318F

    Abstract: AN569 MMBT2131T1
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value


    Original     		PDF MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D 318F AN569 MMBT2131T1

    318F

    Abstract: AN569 MMBT2131T1
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value


    Original     		PDF MMBT2131T1 MMBT2132T1/T3) r14525 MMBT2131T1/D 318F AN569 MMBT2131T1

    AN569

    Abstract: MMBT2131T1 MMBT2131T1G 318F
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available


    Original     		PDF MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D AN569 MMBT2131T1 MMBT2131T1G 318F

    Untitled

    Abstract: No abstract text available
    Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS − V(BR)CEO 342 mW Features • Pb−Free Package is Available


    Original     		PDF MMBT2131T1 MMBT2132T1/T3) MMBT2131T1/D

    FMMTL717TA

    Abstract: FMMT723TA FMMT560TA
    Text: DATE: 24th September, 2010 PCN #: 2024 PCN Title: Qualification of Additional Wafer Fabrication Facility for PNP Bipolar Junction Transistors and Qualification of Alternate Die Attach Material for SOT223 Packaged Products.


    Original     		PDF OT223 s12DE6TA ZXT13P40DE6TA ZXT1M322TA ZXT2M322TA ZXT2M322TC ZXT3M322TA ZXT4M322TA ZXT790AKTC ZXT951KTC FMMTL717TA FMMT723TA FMMT560TA

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)


    Original     		PDF MMBT2132T1/T3) MMBT2131T1 MMBT2131T3 AN569)

    318F

    Abstract: AN569 MMBT2131T1 MMBT2131T3
    Text: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)


    Original     		PDF MMBT2131T1 MMBT2131T3 MMBT2132T1/T3) r14525 MMBT2131T1/D 318F AN569 MMBT2131T1 MMBT2131T3

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Medium Power Switching or Amplification Applications 


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    marking code 346

    Abstract: No abstract text available
    Text: MMBT2131T1G General Purpose Transistors PNP Bipolar Junction Transistor NOTE: Voltage and Current are negative for the PNP Transistor. Features 0.7 AMPERES 30 VOLTS − V BR CEO 342 mW • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted)


    Original     		PDF MMBT2131T1G 17icable MMBT2131T1/D marking code 346

    Untitled

    Abstract: No abstract text available
    Text: BCP5316Q 80V PNP MEDIUM POWER TRANSISTORS IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the • Medium Power Switching or Amplification Applications stringent requirements of Automotive Applications. •


    Original     		PDF BCP5316Q OT223 -500mV BCP5616Q DS36980

    bipolar junction transistor

    Abstract: motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications
    Text: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.


    Original     		PDF MMBT2131T1/D MMBT2131T1 MMBT2131T3 MMBT2132T1/T3) bipolar junction transistor motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications

    100HZ

    Abstract: 10KW 2SA1235A
    Text: RECTRON 2SA1235A SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.2 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC


    Original     		PDF 2SA1235A OT-23 -55OC 150OC OT-23 MIL-STD-202E 100HZ 10KW 2SA1235A

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23


    Original     		PDF FMMT591Q J-STD-020 DS37010

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features


    Original     		PDF FZT751Q OT223 -300mV FZT651Q AEC-Q101 DS36963

    Untitled

    Abstract: No abstract text available
    Text: FMMT591 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : -1 A * Collector-base voltage V(BR)CBO : -80 V * Operating and storage junction temperature range


    Original     		PDF FMMT591 OT-23 -55OC 150OC OT-23 MIL-STD-202E 012different

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT560Q 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 


    Original     		PDF FMMT560Q -500V -150mA 500mA 100mA AEC-Q101 DS37020

    125OC

    Abstract: MMBT2907LT1
    Text: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range


    Original     		PDF MMBT2907LT1 OT-23 -55OCto 150OC OT-23 MIL-STD-202E CHARA10 125OC MMBT2907LT1

    50MHZ

    Abstract: BC808
    Text: RECTRON BC808 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 200 mW (Tamb=25OC) * Collector current ICM : 500 mA * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range


    Original     		PDF BC808 OT-23 150OC OT-23 MIL-STD-202E 012applications 50MHZ BC808

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MMBT2132T1 MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS – V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating 6 Symbol Value


    Original     		PDF MMBT2131T1/T3) MMBT2132T1 MMBT2132T3 AN569)

    Untitled

    Abstract: No abstract text available
    Text: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range


    Original     		PDF MMBT2907LT1 OT-23 -55OCto 150OC OT-23 MIL-STD-202E

    100MHZ

    Abstract: BCW68F
    Text: RECTRON BCW68F SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.33 W (Tamb=25OC) * Collector current ICM : -0.8 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range


    Original     		PDF BCW68F OT-23 150OC OT-23 MIL-STD-202E 100MHZ BCW68F

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.


    OCR Scan     		PDF MMBT2131T1/D MMBT2131T1 MMBT2131T3 MMBT2132T1/T3)