PNP 2SA1487 Search Results

PNP 2SA1487 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SA1213		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N
TTA2070		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini

PNP 2SA1487 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
pnp 2SA1487 Abstract: 2SA1487 Text: Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit: mm 5.9±0.2 4.9±0.2 ● ● 8.6±0.2 • Features High transition frequency fT. Small collector output capacitance Cob. +0.3 0.7–0.2 0.7±0.1 Ta=25˚C Parameter Symbol Ratings	Original	2SA1487 pnp 2SA1487 2SA1487	PDF
Untitled Abstract: No abstract text available Text: Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit: mm 5.9±0.2 4.9±0.2 ● ● 8.6±0.2 • Features High transition frequency fT. Small collector output capacitance Cob. +0.3 0.7–0.2 0.7±0.1 Ta=25˚C Parameter Symbol Ratings	Original	2SA1487 200MHz	PDF
Untitled Abstract: No abstract text available Text: Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit: mm 5.9±0.2 4.9±0.2 ● ● 8.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features High transition frequency fT. Small collector output capacitance Cob. +0.3 0.7–0.2 0.7±0.1	Original	2SA1487	PDF
Untitled Abstract: No abstract text available Text: 2SA1487 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)85 V(BR)CBO (V)85 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10uØ° @V(CBO) (V) (Test Condition)	Original	2SA1487 Freq500M	PDF
pnp 2SA1487 Abstract: 2SA1487 Text: Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● 8.6±0.2 • Features 4.9±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low tp in o co n an in	Original	2SA1487 pnp 2SA1487 2SA1487	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF