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    PNP 2N60 Search Results

    PNP 2N60 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 2N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N600

    Abstract: Germanium PNP - Low Power Transistors
    Text: 2N600 Ge PNP Lo-Pwr BJT 8.25 Transistors Bipolar Germanium PNP L. 1 of 2 Home Part Number: 2N600 Online Store 2N600 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


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    PDF 2N600 com/2n600 2N600 Germanium PNP - Low Power Transistors

    2N6050

    Abstract: No abstract text available
    Text: 2N6050 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT


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    PDF 2N6050 2N6050

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


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    PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    2n6031

    Abstract: No abstract text available
    Text: Central 2N6031 TM Semiconductor Corp. PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits.


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    PDF 2N6031 200mA 500kHz 100kHz 27-August

    2N6055 transistor

    Abstract: 2N6055 2N6053 NPN Darlington transistor Darlington
    Text: 2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications.


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    PDF 2N6053 2N6055 2N6055 2N6053 2N6055 transistor NPN Darlington transistor Darlington

    Untitled

    Abstract: No abstract text available
    Text: Darlington Power Transistors Part No. 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101 TIP111 TIP121 TIP131 TIP102 TIP112 TIP122 TIP132 TIP105 TIP115 TIP125 TIP106 TIP116 TIP126 TIP107 TIP117 TIP127 Polarity NPN PNP NPN PNP VCEO IC Bipolar Transistors


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    PDF 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101

    2N6050

    Abstract: No abstract text available
    Text: 2N6050 60 V - Darlington Complementary PNP Selicon Power Transistor. 1 of 2 Home Part Number: 2N6050 Online Store 2N6050 Diodes 60 Transistors V - Darlingt o n C o m plem ent ary PNP Selic o n Po w er


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    PDF 2N6050 com/2n6050 2N6050

    2N6049

    Abstract: No abstract text available
    Text: 2N6049 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


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    PDF 2N6049 O213AA) 1-Aug-02 2N6049

    2N6049E

    Abstract: No abstract text available
    Text: 2N6049E Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


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    PDF 2N6049E O213AA) 1-Aug-02 2N6049E

    Untitled

    Abstract: No abstract text available
    Text: 2N6049 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


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    PDF 2N6049 O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6049E Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


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    PDF 2N6049E O213AA) 30-Jul-02

    2N6052 equivalent

    Abstract: No abstract text available
    Text: 2N6051 and 2N6052 Available PNP Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/501 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 12 amps and is military qualified up to a JANTXV level. This TO-204AA isolated package features a 180 degree lead orientation.


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    PDF 2N6051 2N6052 MIL-PRF-19500/501 O-204AA O-204AA T4-LDS-0306, 2N6052 equivalent

    BUS48AP

    Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


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    PDF BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10

    2SA70

    Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit


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    PDF 2N6379 2N6274 2N6379* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SA70 BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100

    2N6258

    Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
    Text: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN


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    PDF 2N4900 2N4901 2N4902 2N4903 2N4904 2N4905 2N4906 2N4907 2N4908 2N4909 2N6258 2N5133 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278

    Untitled

    Abstract: No abstract text available
    Text: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50


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    PDF A1331A7 000DQ24 2N5861 2N5864 2N5865 2N5867 2N5868 2N5869 2N5870 2N5871

    Untitled

    Abstract: No abstract text available
    Text: rrz SCSTWOMSON l^O !^ iti gíi®ÍMi0!gi 2N6050 SILICON PNP POWER DARLINGTON TRANSISTOR . • . . . . SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL


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    PDF 2N6050 2N6050

    Untitled

    Abstract: No abstract text available
    Text: Æ T SGS-THOMSON D ISÌ S IIL[1CTISÌ ÌD©S 2N6050 SILICON PNP POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL


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    PDF 2N6050 2N6050 P003F

    JE6043

    Abstract: JE6045 MJE6043 MJE6044 JE6044 MJE6045 mje6041 2N6041 je6041 2N6040
    Text: MO T OR OL A SC X S TR S/ R F 12E D | b3b7254 0G0MSfi4 b | 7 ^ B ^ / 2N6040 thru 2N6042 PNP 2N6043 Him 2N6045 NPN MJE6040 thru MJE6041 PNP MJE6043 thru MÌE6045 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS


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    PDF b3b7254 2N6040 2N6042 2N6043 2N6045 MJE6040 MJE6041 MJE6043 E6045 2N6042, JE6043 JE6045 MJE6044 JE6044 MJE6045 2N6041 je6041

    2N3638A

    Abstract: 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3013 GET3638
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pnp GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3638A 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3638

    2N3417 equivalent

    Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A


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    PDF 50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N3417 equivalent 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent

    TIP31c PNP Transistor

    Abstract: n6111 FGT3055 TIP41C TRANSISTOR Tip41-Tip42 TIP32 NPN Transistor BD243 TIP41/TIP42 Transistor 2n6099 tip30c
    Text: PLASTIC POWER P L A S T IC PO W ER T R A N S IS T O R S E L E C T O R C H A R T TO-220 P A C K A G E lc 3 Am ps (TIP) lc 4 Am ps (BD) V CEO Volts NPN PNP 7 Am ps 5 Am ps NPN NPN PNP 2N6288 2N6111 PNP 30 7 Am ps NPN PNP 40 TIP29 TIP30 TIP31 TIP32 TIP41 TIP42


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    PDF O-220 2N6288 2N6111 TIP29 TIP30 TIP31 TIP32 TIP41 TIP42 2N6103 TIP31c PNP Transistor n6111 FGT3055 TIP41C TRANSISTOR Tip41-Tip42 TIP32 NPN Transistor BD243 TIP41/TIP42 Transistor 2n6099 tip30c

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3


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    PDF 2N6050 2N6051A 2N6052A O-204AA 2N6285 2N6286A 2N6287A 2N7371A 2N6057A

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


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    PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059