2N600
Abstract: Germanium PNP - Low Power Transistors
Text: 2N600 Ge PNP Lo-Pwr BJT 8.25 Transistors Bipolar Germanium PNP L. 1 of 2 Home Part Number: 2N600 Online Store 2N600 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N600
com/2n600
2N600
Germanium PNP - Low Power Transistors
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2N6050
Abstract: No abstract text available
Text: 2N6050 SILICON PNP POWER DARLINGTON TRANSISTOR • ■ ■ ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
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2N6050
2N6050
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2SC1419
Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.
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MJE350
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
TIP75C
2N6488
2SC1419
TIP54
MJ1000
MJ15024 MJ15025
2SC1943
SE9302
MJE2482
2SD675
BU326
BU108
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2n6031
Abstract: No abstract text available
Text: Central 2N6031 TM Semiconductor Corp. PNP SILICON POWER TRANSISTOR 140 VOLTS, 200 WATTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6031 is a 16 Ampere PNP Silicon Power Transistor designed for use in high power amplifiers and high voltage switching regulator circuits.
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2N6031
200mA
500kHz
100kHz
27-August
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2N6055 transistor
Abstract: 2N6055 2N6053 NPN Darlington transistor Darlington
Text: 2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications.
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2N6053
2N6055
2N6055
2N6053
2N6055 transistor
NPN Darlington transistor
Darlington
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Untitled
Abstract: No abstract text available
Text: Darlington Power Transistors Part No. 2N6037 2N6038 2N6039 2N6034 2N6036 TIP100 TIP110 TIP120 TIP130 TIP101 TIP111 TIP121 TIP131 TIP102 TIP112 TIP122 TIP132 TIP105 TIP115 TIP125 TIP106 TIP116 TIP126 TIP107 TIP117 TIP127 Polarity NPN PNP NPN PNP VCEO IC Bipolar Transistors
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2N6037
2N6038
2N6039
2N6034
2N6036
TIP100
TIP110
TIP120
TIP130
TIP101
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2N6050
Abstract: No abstract text available
Text: 2N6050 60 V - Darlington Complementary PNP Selicon Power Transistor. 1 of 2 Home Part Number: 2N6050 Online Store 2N6050 Diodes 60 Transistors V - Darlingt o n C o m plem ent ary PNP Selic o n Po w er
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2N6050
com/2n6050
2N6050
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2N6049
Abstract: No abstract text available
Text: 2N6049 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a
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2N6049
O213AA)
1-Aug-02
2N6049
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2N6049E
Abstract: No abstract text available
Text: 2N6049E Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a
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2N6049E
O213AA)
1-Aug-02
2N6049E
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Untitled
Abstract: No abstract text available
Text: 2N6049 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a
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2N6049
O213AA)
30-Jul-02
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Untitled
Abstract: No abstract text available
Text: 2N6049E Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a
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2N6049E
O213AA)
30-Jul-02
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2N6052 equivalent
Abstract: No abstract text available
Text: 2N6051 and 2N6052 Available PNP Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/501 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 12 amps and is military qualified up to a JANTXV level. This TO-204AA isolated package features a 180 degree lead orientation.
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2N6051
2N6052
MIL-PRF-19500/501
O-204AA
O-204AA
T4-LDS-0306,
2N6052 equivalent
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BUS48AP
Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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BD166
BD165
BD166
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
BUS48AP
2SC1381
mje15033 replacement
2SA698
BD477
BD139.16
2N307
2SC1224
2SD549
BD139.10
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2SA70
Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit
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2N6379
2N6274
2N6379*
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SA70
BU108
2SA1046
2SC7
c 3198 transistor
BU806 Complement
BDX54
tip142
BU326
BU100
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2N6258
Abstract: 2N5133 2N4901 2N5055 2N5129 2N5143 2N5872 2N6030 2N6132 2N6278
Text: _ 0 2 5 8 3 5 4 ADVANCED SEMICONDUCTOR 82D 0 0 0 4 6 D ~J - o ÔE DEI 0250354 □0D0G4b 4T SILICON ADVANCED SEMICONDUCTOR .T R A N S I S T O R S POLARITY PNP PNP PNP' PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN
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2N4900
2N4901
2N4902
2N4903
2N4904
2N4905
2N4906
2N4907
2N4908
2N4909
2N6258
2N5133
2N5055
2N5129
2N5143
2N5872
2N6030
2N6132
2N6278
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Untitled
Abstract: No abstract text available
Text: 3 7E SEMELAB LTD » • A1331A7 000DQ24 S ISMLB se&m type No. Reliability Polarity Option Package vCEO ■c cont hFE@ VCE/'C 'T PD 2N5861 2N5864 2N5865 2N5867 2N5868 SCREEN HI-REL HI-REL SCREEN SCREEN NPN PNP PNP PNP PNP T039 T039 T039 TO 3 TO 3 100 70 50
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A1331A7
000DQ24
2N5861
2N5864
2N5865
2N5867
2N5868
2N5869
2N5870
2N5871
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Untitled
Abstract: No abstract text available
Text: rrz SCSTWOMSON l^O !^ iti gíi®ÍMi0!gi 2N6050 SILICON PNP POWER DARLINGTON TRANSISTOR . • . . . . SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
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2N6050
2N6050
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D ISÌ S IIL[1CTISÌ ÌD©S 2N6050 SILICON PNP POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
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2N6050
2N6050
P003F
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JE6043
Abstract: JE6045 MJE6043 MJE6044 JE6044 MJE6045 mje6041 2N6041 je6041 2N6040
Text: MO T OR OL A SC X S TR S/ R F 12E D | b3b7254 0G0MSfi4 b | 7 ^ B ^ / 2N6040 thru 2N6042 PNP 2N6043 Him 2N6045 NPN MJE6040 thru MJE6041 PNP MJE6043 thru MÌE6045 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
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b3b7254
2N6040
2N6042
2N6043
2N6045
MJE6040
MJE6041
MJE6043
E6045
2N6042,
JE6043
JE6045
MJE6044
JE6044
MJE6045
2N6041
je6041
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2N3638A
Abstract: 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3013 GET3638
Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pnp GET3014 GET3S3B GET3638A GET3638 GET3638A
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50/iA
800mA
GET706
GET708
GET914
GET3013
GET3646
GE1705
CET708
2N3638A
2N3638
2N3856
2N5815
d33025
2N6000
2N4424
2N6002
GET3638
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2N3417 equivalent
Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent
Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A
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50/iA
800mA
GET706
GET708
GET914
GET3013
GET3646
GE1705
CET708
2N3417 equivalent
2N2221-2N2222
2N2222A npn transistor
transistor 2n5174
IC TC 3588
beta transistor 2N2222
1n9148
2N4424
2N4424 equivalent
2N3416 equivalent
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TIP31c PNP Transistor
Abstract: n6111 FGT3055 TIP41C TRANSISTOR Tip41-Tip42 TIP32 NPN Transistor BD243 TIP41/TIP42 Transistor 2n6099 tip30c
Text: PLASTIC POWER P L A S T IC PO W ER T R A N S IS T O R S E L E C T O R C H A R T TO-220 P A C K A G E lc 3 Am ps (TIP) lc 4 Am ps (BD) V CEO Volts NPN PNP 7 Am ps 5 Am ps NPN NPN PNP 2N6288 2N6111 PNP 30 7 Am ps NPN PNP 40 TIP29 TIP30 TIP31 TIP32 TIP41 TIP42
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O-220
2N6288
2N6111
TIP29
TIP30
TIP31
TIP32
TIP41
TIP42
2N6103
TIP31c PNP Transistor
n6111
FGT3055
TIP41C
TRANSISTOR Tip41-Tip42
TIP32 NPN Transistor
BD243
TIP41/TIP42
Transistor 2n6099
tip30c
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3
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2N6050
2N6051A
2N6052A
O-204AA
2N6285
2N6286A
2N6287A
2N7371A
2N6057A
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transistor 206
Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3
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2N6050
O-204AA
2N6051
2N6052
2N6285
2N6286
2N6287
O-254AA
2N7371
T0-204AA
transistor 206
2N7370
AN-750
2N6057
2N6058
2N6059
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