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    PNP 200V 5A SWITCHING TIMES Search Results

    PNP 200V 5A SWITCHING TIMES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    AM27S25DM Rochester Electronics LLC OTP ROM Visit Rochester Electronics LLC Buy

    PNP 200V 5A SWITCHING TIMES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    2SC2607

    Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.


    Original     		PDF 2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent

    2SC2607

    Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.


    Original     		PDF 2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor

    2SC3857

    Abstract: 2SA1493
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications


    Original     		PDF 2SA1493 -200V 2SC3857 -200V; 2SC3857 2SA1493

    2SC2607

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation


    Original     		PDF 2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607

    ZTX956

    Abstract: DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio


    Original     		PDF ZTX956 -100mA, 50MHz -100mA 100mA, -10mA, 100ms ZTX956 DSA003780

    2SA1493

    Abstract: pnp 200v 5a switching characteristics 2SC3857
    Text: Inchange Semiconductor Product Specification 2SA1493 Silicon PNP Power Transistors • DESCRIPTION ·With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF 2SA1493 MT-200 2SC3857 MT-200) 2SA1493 pnp 200v 5a switching characteristics 2SC3857

    2SA1493

    Abstract: 2SC3857
    Text: SavantIC Semiconductor Product Specification 2SA1493 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·Complement to type 2SC3857 APPLICATIONS ·Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		PDF 2SA1493 MT-200 2SC3857 MT-200) 2SA1493 2SC3857

    2SA1493

    Abstract: 2SC3857
    Text: JMnic Product Specification 2SA1493 Silicon PNP Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SC3857 APPLICATIONS ・Audio and general purpose PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		PDF 2SA1493 MT-200 2SC3857 MT-200) 2SA1493 2SC3857

    2SC2608

    Abstract: 2SA1117 pnp 200v 5a switching times
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1117 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2608 APPLICATIONS ·Designed for general purpose applications.


    Original     		PDF 2SA1117 -200V 2SC2608 -50mA; -200V; 2SC2608 2SA1117 pnp 200v 5a switching times

    2SC2607

    Abstract: 2SA1116
    Text: JMnic Product Specification 2SA1116 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2SC2607 APPLICATIONS ・For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter


    Original     		PDF 2SA1116 2SC2607 -50mA -200V; 2SC2607 2SA1116

    2SC2607

    Abstract: 2SA1116 2SA1116 equivalent
    Text: SavantIC Semiconductor Product Specification 2SA1116 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2SC2607 APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION


    Original     		PDF 2SA1116 2SC2607 -200V; 2SC2607 2SA1116 2SA1116 equivalent

    2SA1117

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation


    Original     		PDF 2SA1117 -200V 2SC2608 -50mA; -200V; 2SA1117

    P-Channel IGBT

    Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure
    Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .


    Original     		PDF

    FZT855

    Abstract: FZT956 FZT955
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C


    Original     		PDF OT223 FZT955 FZT956 FZT955 FZT855 FZT956 -100mA -10mA* FZT855

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ISSUE 3 – JUNE 94 FEATURES * 2 Amps continuous current * Up to 5 Amps peak current * Very low saturation voltage * Excellent gain characteristics up to 2 Amps * Spice model available C B E E-Line


    Original     		PDF ZTX956 100ms

    FZT855Ta

    Abstract: fzt855
    Text: A Product Line of Diodes Incorporated Green FZT855 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • BVCEO > 150V   IC = 5A high Continuous Collector Current  Case Material: Molded Plastic. “Green” Molding Compound. 


    Original     		PDF FZT855 OT223 110mV FZT955 AEC-Q101 OT223 J-STD-020 DS33176 FZT855Ta fzt855

    FZT855

    Abstract: FZT955 FZT956 DSA003675
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 2 – OCTOBER 1995 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C


    Original     		PDF OT223 FZT955 FZT956 FZT955 FZT855 FZT956 -100mA -10mA* FZT855 DSA003675

    C3679 equivalent

    Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
    Text: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.


    Original     		PDF T01EE0 H1-T01EE0-0107020SB C3679 equivalent transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220

    d2494

    Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
    Text: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in


    Original     		PDF n6to4467 2SD211to214 2SC4468 2SC1828 2SC3832 2SA768to769 2SA1262 2SA770to771 2SA1725 2SA957to958 d2494 c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493

    pulsotronic

    Abstract: pulsotronic 9914-0800 Metal detector for conveyor belt Pulsotronic metal detector manual pulsotronic 8100-2500 9708-0659 conveyor belt Metal detection sensor distance of 20 cm 9914-0800 metal detector sensor
    Text: TABLE OF CONTENTS Ring Style Sensors Ring Sensor products are used primarily to detect standard . . . . . . . . . . . . . . . . . . . . . . . .6-18 and/or punched parts, and unwanted metals in the re-grind industry. Sensor ring diameters are 12mm to 300mm.


    Original     		PDF 300mm. 120mA 250VAC 1100VA pulsotronic pulsotronic 9914-0800 Metal detector for conveyor belt Pulsotronic metal detector manual pulsotronic 8100-2500 9708-0659 conveyor belt Metal detection sensor distance of 20 cm 9914-0800 metal detector sensor

    Untitled

    Abstract: No abstract text available
    Text: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps


    OCR Scan     		PDF FZT955 FZT956 OT223 FZT955 FZT855 FZT956 -100mA, 50MHz

    triacs bt 804 600v

    Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
    Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­


    OCR Scan     		PDF Comp27-1296 triacs bt 804 600v UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier

    TRANSISTOR BDX

    Abstract: TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184
    Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BUW 4ff 30 A BUW 49 20 A BUX 69 IS A J/T


    OCR Scan     		PDF BUV48 BUV47 O-22CIAB CB-117 BUV37 CB-244 CB-285 TRANSISTOR BDX TRANSISTOR BDX 285 pnp transistor 1000v TRANSISTOR BDX 53 transistor BDX 65 transistor BDX 80 bux diode darlington NPN 1000V isotop DARLINGTON ESM 749 transistor BU 184