Untitled
Abstract: No abstract text available
Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state
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ZXTP03200BG
OT223
-200V
-160mV
OT223
D-81541
A1103-04,
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Untitled
Abstract: No abstract text available
Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state
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ZXTP03200BG
OT223
-200V
-160mV
OT223
ZXTP03200BGTA
ZXTP03200BG
A1103-04,
522-ZXTP03200BGTA
ZXTP03200BGTA
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PNP 200V 2A SOT89
Abstract: TS16949 ZXTP03200BZ ZXTP03200BZTA cont base 28 SOT89 transistor marking 5A
Text: ZXTP03200BZ 200V PNP Low VCE sat transistor in SOT89 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 130mΩ PD = 2.4W Description Packaged in the SOT89 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state
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ZXTP03200BZ
-200V
-160mV
ZXTP03200BZTA
D-81541
A1103-04,
PNP 200V 2A SOT89
TS16949
ZXTP03200BZ
ZXTP03200BZTA
cont base 28
SOT89 transistor marking 5A
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TS16949
Abstract: ZXTP03200BG ZXTP03200BGTA marking sot223 GY
Text: ZXTP03200BG 200V PNP Low VCE sat transistor in SOT223 Summary BVCEO > -200V BVECO > -2V IC(cont) = 2A VCE(sat) < -160mV @ -1A RCE(sat) = 135mΩ PD = 3W Description Packaged in the SOT223 outline this new 5th generation low saturation 200V PNP transistor offers extremely low on state
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ZXTP03200BG
OT223
-200V
-160mV
OT223
ZXTP03200BGTA
D-81541
A1103-04,
TS16949
ZXTP03200BG
ZXTP03200BGTA
marking sot223 GY
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FZT956
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FZT956 Green 200V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -200V IC = -2A high Continuous Collector Current IC = -5A Peak Pulse Current
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FZT956
OT223
-200V
-165mV
AEC-Q101
OT223
J-STD-020
MIL-STD-202,
FZT956
DS36119
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Untitled
Abstract: No abstract text available
Text: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi−Fi Power Amp, Audio Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE92
NTE93
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NTE92
Abstract: NTE93 NTE93MCP pnp 200v
Text: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi–Fi Power Amp, Audio Ourtput Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE92
NTE93
NTE92
NTE93
NTE93MCP
pnp 200v
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pnp 200v 5a switching characteristics
Abstract: pnp 200v 2SA1250 200v 5a transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= -1.0V(Max.)@ IC= -5A APPLICATIONS ·Designed for general-purpose power switching applications.
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2SA1250
-200V
-10mA;
-200V;
pnp 200v 5a switching characteristics
pnp 200v
2SA1250
200v 5a transistor
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2SA651
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA651 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.
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2SA651
-200V
-25mA;
-200V;
2SA651
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2SC2607
Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.
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2SA1116
-200V
2SC2607
-50mA;
-200V;
2SC2607
2SA1116
pnp 200v 5a switching times
2SA1116 equivalent
200v 5a transistor
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2SC2608
Abstract: 2SA1117 pnp 200v 5a switching times
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1117 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2608 APPLICATIONS ·Designed for general purpose applications.
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2SA1117
-200V
2SC2608
-50mA;
-200V;
2SC2608
2SA1117
pnp 200v 5a switching times
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2SC2607
Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.
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2SA1116
-200V
2SC2607
-50mA;
-200V;
2SC2607
2SA1116
pnp 200v 5a switching characteristics
pnp 200v 5a switching times
2SA1116 equivalent
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2SA1169
Abstract: 2SC2773 transistor 2SA1169 transistor pnp VCEO 12V Ic 1A transistor pnp 12v 1a
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1169 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2773 APPLICATIONS ·Designed for power amplifier and general purpose
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2SA1169
-200V
2SC2773
-50mA;
-200V;
2SA1169
2SC2773
transistor 2SA1169
transistor pnp VCEO 12V Ic 1A
transistor pnp 12v 1a
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2SC3857
Abstract: 2SA1493
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications
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2SA1493
-200V
2SC3857
-200V;
2SC3857
2SA1493
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2SA2151
Abstract: 2sc6011 200v 5a pnp 2sa215
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications
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2SA2151
-200V
2SC6011
-50mA
-200V
2SA2151
2sc6011
200v 5a pnp
2sa215
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2SA2151
Abstract: 2sc6011 2SA21
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2151 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 APPLICATIONS ·Designed for audio and general purpose applications
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2SA2151
-200V
2SC6011
150therwise
-50mA
-200V
2SA2151
2sc6011
2SA21
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Untitled
Abstract: No abstract text available
Text: , U na. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1250 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) • Low Collector Saturatioin Voltage.)= -1.0V(Max.)@ lc= -5A
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2SA1250
-200V
-10mA;
-200V;
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2SC2607
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation
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2SA1116
-200V
2SC2607
-50mA;
-200V;
2SC2607
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2SA1117
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1117 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation
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2SA1117
-200V
2SC2608
-50mA;
-200V;
2SA1117
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2SB645
Abstract: 200w audio amplifier ic 2SD665 200w audio power amplifier
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB645 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·High Power Dissipation: PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD665 APPLICATIONS ·Designed for power amplifier applications.
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2SB645
-200V
2SD665
-10mA;
-100V;
2SB645
200w audio amplifier ic
2SD665
200w audio power amplifier
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2SC1586
Abstract: 2SA909
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA909 DESCRIPTION •High Power Dissipation: PC= 150W Max. @TC=25℃ ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) ·Complement to Type 2SC1586 APPLICATIONS ·Designed for amplifier and general purpose applications.
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2SA909
-200V
2SC1586
-50mA;
-200V;
2SC1586
2SA909
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2SA2151
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA2151 Silicon PNP Power Transistor ./ f pX^ DESCRIPTION 1I • High Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) r^, I PIN 1.8ASE
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2SA2151
-200V
2SC6011
-50mA
-200V
2SA2151
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2SC2773
Abstract: 2sa1169
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1169 DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE V(BR)CEo= -200V(Min) • High Power Dissipation
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2SA1169
-200V
2SC2773
MT-200
-50mA;
-200V;
2SC2773
2sa1169
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DTP3200B
Abstract: DXTP03200BP5 DXTP03200BP5-13
Text: A Product Line of Diodes Incorporated DXTP03200BP5 ADVANCE INFORMATION 200V PNP HIGH VOLTAGE TRANSISTOR PowerDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 3.2W
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DXTP03200BP5
OT223;
-200V
J-STD-020
MIL-STD-202,
DS32068
DTP3200B
DXTP03200BP5
DXTP03200BP5-13
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