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    PNP 12Q Search Results

    PNP 12Q Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73128RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency PNP Transistor Array Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PNP 12Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: S9012LT1 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value -20 -40 -5 -500 300 2.4 417 S9012PLT1=12P S9012QLT1=12Q S9012RLT1=12R -0.1 -20 -40 -100 -5.0 -100 -35 -4.0 WEITRON http://www.weitron.com.tw S9012SLT1=12S 1/2 -0.15 u -0.15


    Original     		PDF S9012LT1 OT-23 S9012PLT1 S9012QLT1 S9012RLT1 S9012SLT1 28-Apr-2011 -50mAdc)

    marking 12Q SOT-23

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping L9012PLT1G 12P 3000/Tape&Reel


    Original     		PDF L9012PLT1G 3000/Tape L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G L9012RLT1G marking 12Q SOT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping 12P 3000/Tape&Reel L9012PLT1G


    Original     		PDF L9012PLT1G 3000/Tape OT-23 O-236AB) L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G

    L9012QLT1G

    Abstract: L9012RLT1G L9012SLT1G L9012 L9012PLT1G ,MARKING 12p SOT-23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping L9012PLT1G 12P 3000/Tape&Reel


    Original     		PDF L9012PLT1G 3000/Tape L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G L9012RLT1G L9012QLT1G L9012RLT1G L9012SLT1G L9012 L9012PLT1G ,MARKING 12p SOT-23

    pnp 12Q

    Abstract: L9012RLT1G MARKING 12p SOT-23 L9012QLT1G L9012PLT1G L9012SLT1G ,MARKING 12p SOT-23 12p sot-23
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012PLT1G PNP Silicon Series FEATURE We declare that the material of product compliance with RoHS requirements. 3 DEVICE MARKING AND ORDERING INFORMATION Device 1 Marking Shipping L9012PLT1G 12P 3000/Tape&Reel


    Original     		PDF L9012PLT1G 3000/Tape L9012PLT3G 10000/Tape L9012QLT1G L9012QLT3G L9012RLT1G pnp 12Q L9012RLT1G MARKING 12p SOT-23 L9012QLT1G L9012PLT1G L9012SLT1G ,MARKING 12p SOT-23 12p sot-23

    2SC2607

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation


    Original     		PDF 2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF L9012PLT1G AEC-Q101 S-L9012PLT1G L9012PLT3G S-L9012PLT3G L9012QLT1G S-L9012QLT1G L9012QLT3G

    New Jersey Semiconductor

    Abstract: No abstract text available
    Text: \yJ.£.i±£.u ij <z3s.ml-Conau.ctoi , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1909 DESCRIPTION • Collector-Emitter Breakdown Voltage- PIN 1.BASE


    Original     		PDF 2SA1909 -140V 2SC5101 New Jersey Semiconductor

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF L9012PLT1G AEC-Q101 S-L9012PLT1G L9012PLT3G S-L9012PLT3G L9012QLT1G S-L9012QLT1G L9012QLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF L9012PLT1G AEC-Q101 S-L9012PLT1G L9012PLT3G L9012QLT1G L9012QLT3G

    Untitled

    Abstract: No abstract text available
    Text: X LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012XLT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION Device 1 Package Shipping 2 L9012xx X LT1G SOT-23 3000/Tape&Reel L9012XLT3G SOT-23 10000/Tape&Reel SOT-23 TO-236AB


    Original     		PDF L9012XLT1G L9012xx OT-23 3000/Tape L9012XLT3G 10000/Tape O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012PLT1G FEATURE Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.


    Original     		PDF L9012PLT1G AEC-Q101 S-L9012PLT1G L9012PLT3G L9012QLT1G L9012QLT3G

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1186 Silicon PNP Power Transistor i^ DESCRIPTION • High Collector-Emitter Breakdown VoltageV(BR)CEO=-150V(Min) • Good Linearity of hFE


    Original     		PDF 2SA1186 -150V 2SC2837 -25mA -150V;

    transistor bI 340

    Abstract: 2SA1106 PNP Transistor 2sc2581 2SA1106 tr/transistor bI 340
    Text: <3zmi- 2ondu<2toi ^P10 duct i, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1106 Silicon PNP Power Transistor ft ^ DESCRIPTION • Collector-Emitter Breakdown Voltage- , v .' VK V(BR)CEo= -140V(Min)


    Original     		PDF 2SA1106 -140V 2SC2581 -50mA; -140V; transistor bI 340 2SA1106 PNP Transistor 2sc2581 2SA1106 tr/transistor bI 340

    MARKING 12p SOT-23

    Abstract: 12p sot-23 ,MARKING 12p SOT-23 L9012 L9012PLT1 L9012QLT1
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors L9012*LT1 PNP Silicon 3 FEATURE 1 Pb-Free Package is available. 2 ORDERING INFORMATION SOT-23 TO-236AB Device Package Shipping L9012*LT1 SOT-23 3000/Tape&Reel L9012*LT1G (Pb-Free) SOT-23 3000/Tape&Reel


    Original     		PDF L9012 OT-23 O-236AB) 3000/Tape MARKING 12p SOT-23 12p sot-23 ,MARKING 12p SOT-23 L9012PLT1 L9012QLT1

    2Sc2486

    Abstract: 2SA1062
    Text: PANASONIC INDL/ELEK -CIO 1EE 1 • bTBSÛSS QQ104S1 T ■ Silicon Epitaxal Base ' lesa Transistor T-33-Z1 r 33 3 2SA1062 PNP) 2SC2486(NPN) TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C) Item


    OCR Scan     		PDF QQ104S1 T-33-/3 2SA1062 2SC2486 2SA1062 2SC2486 s-120

    Untitled

    Abstract: No abstract text available
    Text: PANASONIC INDL/ELEK -CIO 1EE 1 • bTBSÛSS QQ104S1 T ■ Silicon Epitaxal Base ‘ lesa Transistor T-33-Z1 r 33 3 2SA1062 PNP) 2SC2486(NPN) TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C) Item


    OCR Scan     		PDF QQ104S1 2SA1062 2SA1062 2SC2486

    2SA1062

    Abstract: 2SC2486
    Text: PANASONIC INDL/ELEK -CIC> S i E ‘ l p l i c i e o t s a 15E » • bT3SÔS5 0010451 T ■ n T x a a T l r B a a n s s i e s - 3 3 3 3 r t o - z 2SA1062 PNP 2SC2486(NPN) i 3 r TOP-3 Package (See Page 36 For Dimensions)_ 2SA1062 (PNPÌ Absolute Maximum Ratings (Ta=25°C)


    OCR Scan     		PDF T-33-/3 2SA1062 2SC2486 2SA1062 2SC2486

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistors BCX 51 . BCX 53 Features • • • • For AF driver and output stages High collector current Low coliector-emitter saturation voltage Complementary types: BCX 54 . BCX 56 NPN Type Marking Ordering Code (tape and reel)


    OCR Scan     		PDF Q62702-C1847 Q62702-C1831 Q62702-C1857 Q62702-C1743 Q62702-C1744 Q62702-C1900 Q62702-C905 Q62702-C1753 Q62702-C1502 OT-89

    2SA1294

    Abstract: 2SC3263 BAAAE
    Text: AOK AOK Sem icon ductor P roduct Specification 2SA1294 Silicon PNP P o w er Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SC3263 APPLICATIONS • Audio and general purpose PINNING PIN DESCRIPTION 1 1 Base o Collector:connected to


    OCR Scan     		PDF 2SA1294 2SC3263 BAAAE

    2SA1295

    Abstract: 2SC3264 2SA1295 2SC3264
    Text: AOK AOK Semiconductor Product Spec ification 2SA1295 Silicon PNP P o w e r Transistors DESCRIPTION • With MT-200 package • Complement to type 2SC3264 APPLICATIONS • Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base o Collector:conr>ected to


    OCR Scan     		PDF 2SA1295 MT-200 2SC3264 2SA1295 2SC3264

    B205A

    Abstract: 2SA1186 2SC2837
    Text: AOK AOK Semiconductor Product Specification 2 S A 11 8 6 S ilicon PNP P o w er Transistors DESCRIPTION • W ith TO-3PN package • High current capability • Complement to type 2SC2837 APPLICATIONS • A udio and general purpose applications PINNING PIN


    OCR Scan     		PDF 2SA1186 2SC2837 B205A 2SA1186

    2SA1215

    Abstract: 2SC2921
    Text: AOK AOK Semiconductor Product Specification 2SA1215 S ilicon PNP P o w er Transistors DESCRIPTION • With MT-200 package • Complement to type 2 SC2921 APPLICATIONS • Audio and general purpose PIN N IN G see Fig.2 PIN DESCRIPTION 1 Base o Collector:connected to


    OCR Scan     		PDF 2SA1215 MT-200 2SC2921

    Untitled

    Abstract: No abstract text available
    Text: 2SD1411A TOSHIBA TO SHIBA TRANSISTOR n n mm SILICON PNP TRIPLE DIFFUSED TYPE i mmr du i m mi a m m HIGH CURRENT SW ITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm Low Saturation Voltage : V q e gaj = 0.5V (Max.) at Iç = 4A


    OCR Scan     		PDF 2SD1411A